US4823182A
Expired / Lapsed
US
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Semiconductor device with a diffusion barrier contact of a refractory metal nitride and either carbon or boron
Assignee: Toshiba Corp
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Filing: 1987-11-20
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Granted: 1989-04-18
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Expires: 2007-11-20
Abstract
Abstract A semiconductor device is disclosed, in which a titanium nitride film containing boron or carbon is provided between a semiconductor substrate and an aluminum film. Non-reacted substances in the titanium nitride film are rendered inactive by boron or carbon contained in the titanium nitride film. Thus, it is possible to improve the barrier properties of the titanium nitride film as mutual diffusion prevention film and also ensure good electric conductivity.
Inventors
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:43
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W20/033; H10W20/047; H10W20/051; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
62 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type which has a surface layer with an impurity region of a second conductivity type; a nitride of a high melting point metal formed on said semiconductor substrate and containing at least one of boron and carbon; and a metal film formed on said nitride of a high melting point metal.
Claim 2
Dependent Claim
62 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type which has a surface layer with an impurity region of a second conductivity type; a nitride of a high melting point metal formed on said semiconductor substrate and containing at least one of boron and carbon; and a metal film formed on said nitride of a high melting point metal.
Claim 3
Dependent Claim
18 words
A device according to claim 1, wherein said nitride of a high melting point metal is titanium nitride.
Claim 4
Dependent Claim
18 words
A device according to claim 1, wherein said nitride of a high melting point metal is hafnium nitride.
Claim 5
Dependent Claim
18 words
A device according to claim 1, wherein said nitride of a high melting point metal is tungsten nitride.
Claim 6
Dependent Claim
14 words
A device according to claim 1, wherein said semiconductor substrate is a silicon substrate.
Claim 7
Dependent Claim
15 words
A device according to claim 1, wherein said semiconductor substrate is a gallium arsenide substrate.
Claim 8
Dependent Claim
12 words
A device according to claim 1, wherein said metal film is aluminum.
Claim 9
Dependent Claim
30 words
A device according to claim 1, wherein a titanium film or a titanium silicide film is formed between said semiconductor substrate and said nitride of a high melting point metal.
Claim 10
Dependent Claim
30 words
A device according to claim 1, wherein a cobalt film or a cobalt silicide film is formed between said semiconductor substrate and said nitride of a high melting point metal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |