US5093710A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a layer of titanium nitride on the side walls of contact holes and method of fabricating same
Assignee: Seiko Epson Corp
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Filing: 1990-07-05
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Granted: 1992-03-03
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Expires: 2010-07-05
Abstract
Abstract Method of fabricating a semiconductor device having minute contact holes formed in an insulating film that is formed on a first metal layer. A layer of titanium nitride is formed on the side walls in the holes and on the insulating layer. A second metal layer is formed on the layer of titanium nitride. The second metal layer consists mainly of aluminum and is not thinned in the holes. The second metal layer and the underlying titanium nitride layer are photolithographically patterned.
Inventors
- 👤 Toshihiko Higuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:24
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/41; H10W20/42; H10W20/425
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
144 words
A semiconductor device comprising; a semiconductor substrate; a first conductive layer of a metal formed over the substrate and formed into first leads; an insulating layer formed upon the first conductive layer and provided with holes extending to the first conductive layer; a layer containing titanium and disposed upon those portions of the first conductive layer which are expose through the holes and upon the insulating layer including the side walls of the holes, said layer constituting an alloy of titanium and the metal of said first conductive layer where said layer is disposed upon those portions of the first conductive layer which are exposed through the holes, and constituting titanium nitride where said layer is disposed upon the insulating layer including the side walls of the holes; and a second conductive layer formed upon the layer containing titanium and formed into second leads.
Claim 2
Dependent Claim
144 words
A semiconductor device comprising; a semiconductor substrate; a first conductive layer of a metal formed over the substrate and formed into first leads; an insulating layer formed upon the first conductive layer and provided with holes extending to the first conductive layer; a layer containing titanium and disposed upon those portions of the first conductive layer which are expose through the holes and upon the insulating layer including the side walls of the holes, said layer constituting an alloy of titanium and the metal of said first conductive layer where said layer is disposed upon those portions of the first conductive layer which are exposed through the holes, and constituting titanium nitride where said layer is disposed upon the insulating layer including the side walls of the holes; and a second conductive layer formed upon the layer containing titanium and formed into second leads.
Claim 3
Dependent Claim
15 words
The semiconductor device of claim 1 wherein the second conductive layer consists principally of aluminum.
Claim 4
Dependent Claim
28 words
The semiconductor device of claim 1 wherein the first conductive layer consists of a metal containing molybdenum, and the alloy consists of an alloy of titanium and molybdenum.
Claim 5
Dependent Claim
15 words
The semiconductor device of claim 3 wherein the second conductive layer consists principally of aluminum.
Claim 6
Independent Claim
158 words
A method of fabricating a semiconductor device, comprising the steps of: forming a first insulating film upon a semiconductor substrate; forming a first conductive layer for creating first leads upon the first insulating film; forming a second insulating film upon the first conductive layer, the second insulating film having holes down to the first conductive layer; forming a layer of titanium metal in the holes and upon the second insulating film; thermally treating the layer of titanium metal in an atmosphere of nitrogen to change the layer of titanium metal in contact with the first conductive layer exposed through the holes into a layer of a titanium compound and to change the layer of metal on the side walls of the holes and on the second insulating film into a layer of titanium nitride; and forming a second conductive layer for creating second leads upon the layer of the titanium compound and upon the layer of titanium nitride.
Claim 7
Independent Claim
158 words
A method of fabricating a semiconductor device, comprising the steps of: forming a first insulating film upon a semiconductor substrate; forming a first conductive layer for creating first leads upon the first insulating film; forming a second insulating film upon the first conductive layer, the second insulating film having holes down to the first conductive layer; forming a layer of titanium metal in the holes and upon the second insulating film; thermally treating the layer of titanium metal in an atmosphere of nitrogen to change the layer of titanium metal in contact with the first conductive layer exposed through the holes into a layer of a titanium compound and to change the layer of metal on the side walls of the holes and on the second insulating film into a layer of titanium nitride; and forming a second conductive layer for creating second leads upon the layer of the titanium compound and upon the layer of titanium nitride.
Claim 8
Dependent Claim
35 words
The method of fabricating a semiconductor device according to claim 5 wherein the first conductive layer is a metal layer containing molybdenum, and wherein the titanium compound consists of a compound of titanium and molybdenum.
Claim 9
Dependent Claim
20 words
The method of fabricating a semiconductor device according to claim 6 wherein the second conductive layer consists principally of aluminum.
Claim 10
Dependent Claim
20 words
The method of fabricating a semiconductor device according to claim 8 wherein the second conductive layer consists principally of aluminum.
Claim 11
Dependent Claim
33 words
The method of fabricating a semiconductor device according to claim 5 wherein said step of thermally treating the layer of titanium metal is carried out at a temperature of 600° to 800° C.
Claim 12
Dependent Claim
32 words
The method of fabricating a semiconductor device according to claim 5 wherein said step of thermally treating the layer of titanium metal is carried out at a temperature of about 700° C.
Claim 13
Independent Claim
176 words
A method of fabricating a semiconductor device, comprising the steps of: forming a first insulating film upon a semiconductor substrate; forming a first conductive layer for creating first leads upon the first insulating film; forming a second insulating film upon the first conductive layer; forming holes in the second insulating film down to the first conductive layer; forming a layer of titanium metal in the holes and upon the second insulating film; heat treating the layer of titanium metal to change the layer of titanium in contact with the first conductive layer exposed through the holes into a layer of a titanium compound and to change the layer of metal titanium on the side walls in the holes and on the second insulating layer of titanium nitride, said step of heat treating including nitriding the layer of titanium metal with plasma in an atmosphere of nitrogen to form the titanium nitride layer; and forming a second conductive layer for creating second leads upon the layer of the titanium compound and upon the layer of titanium nitride.
Claim 14
Independent Claim
176 words
A method of fabricating a semiconductor device, comprising the steps of: forming a first insulating film upon a semiconductor substrate; forming a first conductive layer for creating first leads upon the first insulating film; forming a second insulating film upon the first conductive layer; forming holes in the second insulating film down to the first conductive layer; forming a layer of titanium metal in the holes and upon the second insulating film; heat treating the layer of titanium metal to change the layer of titanium in contact with the first conductive layer exposed through the holes into a layer of a titanium compound and to change the layer of metal titanium on the side walls in the holes and on the second insulating layer of titanium nitride, said step of heat treating including nitriding the layer of titanium metal with plasma in an atmosphere of nitrogen to form the titanium nitride layer; and forming a second conductive layer for creating second leads upon the layer of the titanium compound and upon the layer of titanium nitride.
Claim 15
Dependent Claim
55 words
The method of fabricating a semiconductor device according to claim 11, wherein said step of heat treating further comprises heating the laminate so that parts of the layer of titanium metal react with the first conductive layer, prior to the step of nitriding the layer of titanium metal with plasma in an atmosphere of nitrogen.
Claim 16
Dependent Claim
38 words
The method of fabricating a semiconductor device according to claim 12 wherein the first conductive layer is a metal layer containing molybdenum, and wherein the layer of the titanium compound consists of a compound of titanium and molybdenum.
Claim 17
Dependent Claim
20 words
The method of fabricating a semiconductor device according to claim 13 wherein the second conductive layer consists principally of aluminum.
Claim 18
Dependent Claim
20 words
The method of fabricating a semiconductor device according to claim 12 wherein the second conductive layer consists principally of aluminum.
Claim 19
Dependent Claim
20 words
The method of fabricating a semiconductor device according to claim 11 wherein the second conductive layer consists principally of aluminum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-03 | 1995-09-02 | 1996-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-03 | 1999-09-02 | 2000-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-03 | 2003-09-02 | 2004-03-03 | $7700.00 | Window Closed / Lapsed |