US4965656A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1989-02-21
•
Granted: 1990-10-23
•
Expires: 2009-02-21
Abstract
Abstract This invention provides a semiconductor device having an electrode conductor layer on a semiconductor substrate through the medium of a diffusion barrier layer, comprising the diffusion barrier layer formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device. According to this invention, the reaction between the metal conductor and the semiconductor substrate and the diffusion of the conductor material into the semiconductor substrate can be prevented and resultantly a semiconductor device having a high thermal reliability can be obtained.
Inventors
- 👤 Yasushi Koubuchi
- 👤 Jin Onuki
- 👤 Masahiro Koizumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:41
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
134 words
A semiconductor device comprising a semiconductor substrate of silicon, having integrated circuits therein, a diffusion barrier layer formed on said substrate, and an electrode conductor layer formed of aluminum or aluminum-silicon alloy on said diffusion barrier layer, wherein the diffusion barrier layer is an amorphous material layer formed of an amorphous material having a higher crystallization temperature than a temperature of any heat treatment applied to said semiconductor device after the formation of the amorphous material layer, the amorphous material being of an alloy, or a compound, of at least two metals selected from the group consisting of beryllium, boron, silicon, titanium, manganese, iron, cobalt, nickel, copper, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, iridium, thorium, samarium, gadolinium, and terbium, the at least two metals being in a eutectic composition.
Claim 2
Dependent Claim
134 words
A semiconductor device comprising a semiconductor substrate of silicon, having integrated circuits therein, a diffusion barrier layer formed on said substrate, and an electrode conductor layer formed of aluminum or aluminum-silicon alloy on said diffusion barrier layer, wherein the diffusion barrier layer is an amorphous material layer formed of an amorphous material having a higher crystallization temperature than a temperature of any heat treatment applied to said semiconductor device after the formation of the amorphous material layer, the amorphous material being of an alloy, or a compound, of at least two metals selected from the group consisting of beryllium, boron, silicon, titanium, manganese, iron, cobalt, nickel, copper, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, iridium, thorium, samarium, gadolinium, and terbium, the at least two metals being in a eutectic composition.
Claim 3
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a copper- 15 to 50 atomic % titanium alloy.
Claim 4
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a copper- 15 to 50 atomic % titanium alloy.
Claim 5
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of an iron- 5 to 20 atomic % zirconium alloy.
Claim 6
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of an iron- 5 to 20 atomic % zirconium alloy.
Claim 7
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of an iron- 60 to 80 atomic % zirconium alloy.
Claim 8
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of an iron- 60 to 80 atomic % zirconium alloy.
Claim 9
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a hafnium- 50 to 70 atomic % cobalt alloy.
Claim 10
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a hafnium- 50 to 70 atomic % cobalt alloy.
Claim 11
Dependent Claim
50 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a hafnium - 50 to 70 atomic % nickel alloy.
Claim 12
Dependent Claim
50 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a hafnium - 50 to 70 atomic % nickel alloy.
Claim 13
Dependent Claim
48 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium-5 to 12 atomic % cobalt alloy.
Claim 14
Dependent Claim
48 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium-5 to 12 atomic % cobalt alloy.
Claim 15
Dependent Claim
50 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium - 10 to 50 atomic % nickel alloy.
Claim 16
Dependent Claim
50 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium - 10 to 50 atomic % nickel alloy.
Claim 17
Dependent Claim
48 words
A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium- 30 to 80 atomic % palladium alloy.
Claim 18
Dependent Claim
48 words
A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium- 30 to 80 atomic % palladium alloy.
Claim 19
Dependent Claim
55 words
A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a titanium- 24 to 55 atomic % beryllium - 5 to 30 atomic % zirconium alloy.
Claim 20
Dependent Claim
55 words
A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a titanium- 24 to 55 atomic % beryllium - 5 to 30 atomic % zirconium alloy.
Claim 21
Dependent Claim
54 words
A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium- 15 to 45 atomic % beryllium- 5 to 30 atomic % niobium alloy.
Claim 22
Dependent Claim
54 words
A semiconductor device having, on a semiconductor substrate silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a zirconium- 15 to 45 atomic % beryllium- 5 to 30 atomic % niobium alloy.
Claim 23
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a cobalt- 10 to 30 atomic % titanium alloy.
Claim 24
Dependent Claim
49 words
A semiconductor device having, on a semiconductor substrate of silicon and through the medium of a diffusion barrier layer, an electrode conductor layer formed of aluminum or aluminum-silicon alloy, comprising the diffusion barrier layer formed of an amorphous material of a cobalt- 10 to 30 atomic % titanium alloy.
References Cited (Backward Citations)
DE2457484A1
Cited
US4201999A
Cited
US4668310A
Cited
US4350994A
Cited
JPS56135927A
Cited
GB2130793A
Cited
US4546373A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-22 | 1994-04-23 | 1994-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-22 | 1998-04-23 | 1998-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-22 | 2002-04-23 | 2002-10-23 | $7700.00 | Window Closed / Lapsed |