US5554866A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pre-oxidizing high-dielectric-constant material electrodes
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1996-09-10
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Expires: 2015-06-07
Abstract
Abstract Generally, according to the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an unreactive noble metal layer (e.g. Pt 38) but before deposition of an HDC material (e.g. BST 42). An important aspect of the present invention is that the pre-oxidation of the sidewall generally causes a substantial amount of the potential sidewall expansion (and consequent noble metal layer deformation) to occur before deposition of the HDC material. One embodiment of the present invention is a microelectronic structure comprising a supporting layer having a principal surface, and an adhesion layer overlying the principal surface of the supporting layer, wherein the adhesion layer comprises a top surface and an expanded, oxidized sidewall (e.g. TiO2 40). The structure further comprises a noble metal layer overlying the top surface of the adhesion layer, wherein the noble metal layer comprises a deformed area overlying the oxidized sidewall, and a high-dielectric-constant material layer overlying the noble metal layer. The high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to the deformed area of the noble metal layer.
Inventors
- 👤 Yasushiro Nishioka
- 👤 Scott R. Summerfelt
- 👤 Kyung-ho Park
- 👤 Pijush Bhattacharya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:52
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/682; H10D1/696; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
95 words
A microelectronic structure comprising: (a) a supporting layer having a principal surface; (b) an adhesion layer overlying said principal surface of said supporting layer, said adhesion layer comprising a top surface and an expanded, oxidized sidewall; (c) a noble metal layer overlying said top surface of said adhesion layer, said noble metal layer comprising a deformed area overlying said oxidized sidewall; and (d) a high-dielectric-constant material layer overlying said noble metal layer, whereby said high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to said deformed area of said noble metal layer.
Claim 2
Dependent Claim
95 words
A microelectronic structure comprising: (a) a supporting layer having a principal surface; (b) an adhesion layer overlying said principal surface of said supporting layer, said adhesion layer comprising a top surface and an expanded, oxidized sidewall; (c) a noble metal layer overlying said top surface of said adhesion layer, said noble metal layer comprising a deformed area overlying said oxidized sidewall; and (d) a high-dielectric-constant material layer overlying said noble metal layer, whereby said high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to said deformed area of said noble metal layer.
Claim 3
Dependent Claim
20 words
The structure of claim 1, further comprising said high-dielectric-constant material layer conformally overlying said oxidized sidewall of said adhesion layer.
Claim 4
Dependent Claim
13 words
The structure of claim 1, wherein said oxidized sidewall comprises a conductive oxide.
Claim 5
Dependent Claim
18 words
The structure of claim 3, wherein said adhesion layer comprises ruthenium and said oxidized sidewall comprises ruthenium dioxide.
Claim 6
Dependent Claim
15 words
The structure of claim 3 wherein said top surface of said adhesion layer is oxidized.
Claim 7
Dependent Claim
18 words
The structure of claim 5, wherein said adhesion layer comprises ruthenium and said oxidized sidewall comprises ruthenium dioxide.
Claim 8
Dependent Claim
15 words
The structure of claim 1 further comprising an upper electrode overlying said high-dielectric-constant material layer.
Claim 9
Dependent Claim
25 words
The structure of claim 7, wherein said upper electrode is selected from the group consisting of: palladium, ruthenium, rhodium, gold, iridium, silver, and combinations thereof.
Claim 10
Dependent Claim
13 words
The structure of claim 1, wherein said oxidized sidewall comprises an insulating oxide.
Claim 11
Dependent Claim
19 words
The structure of claim 9, wherein said adhesion layer comprises titanium nitride and said insulating oxide comprises titanium dioxide.
Claim 12
Dependent Claim
39 words
The structure of claim 1, wherein said adhesion layer is selected from the group consisting of: conductive metals, conductive metal nitrides, conductive metal oxides, conductive metal silicides, conductive metal carbides, conductive metal borides, ternary amorphous nitrides, and combinations thereof.
Claim 13
Dependent Claim
47 words
The structure of claim 1, wherein said adhesion layer is selected from the group consisting of: titanium aluminum nitride, Zr nitride, Hf nitride, Y nitride, Sc nitride, La nitride, N deficient Al nitride, doped Al nitride, Mg nitride, Ca nitride, Sr nitride, Ba nitride, and combinations thereof.
Claim 14
Dependent Claim
50 words
The structure of claim 1, wherein said high-dielectric-constant material layer is selected from the group consisting of: barium strontium titanate, lead zirconate titanate, lead lanthanum titanate, lead lanthanum zirconate titanate, bismuth titanate, potassium tantalate, lead scandium tantalate, lead niobate, lead zinc niobate, potassium niobate, lead magnesium niobate, and combinations thereof.
Claim 15
Dependent Claim
24 words
The structure of claim 1, wherein said noble metal layer is selected from the group consisting of: platinum, palladium, iridium, rhodium, and combinations thereof.
Claim 16
Dependent Claim
97 words
A microelectronic structure comprising: (a) a supporting layer having a principal surface; (b) a conductive adhesion layer overlying said principal surface of said supporting layer, said adhesion layer comprising a top surface and an expanded, conductive oxidized sidewall; (c) a noble metal layer overlying said top surface of said adhesion layer, said noble metal layer comprising a deformed area overlying said oxidized sidewall; and (d) a high-dielectric-constant material layer overlying said noble metal layer, whereby said high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to said deformed area of said noble metal layer.
Claim 17
Dependent Claim
97 words
A microelectronic structure comprising: (a) a supporting layer having a principal surface; (b) a conductive adhesion layer overlying said principal surface of said supporting layer, said adhesion layer comprising a top surface and an expanded, conductive oxidized sidewall; (c) a noble metal layer overlying said top surface of said adhesion layer, said noble metal layer comprising a deformed area overlying said oxidized sidewall; and (d) a high-dielectric-constant material layer overlying said noble metal layer, whereby said high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to said deformed area of said noble metal layer.
Claim 18
Dependent Claim
15 words
The structure of claim 15 wherein said top surface of said adhesion layer is oxidized.
Claim 19
Dependent Claim
20 words
The structure of claim 15, further comprising said high-dielectric-constant material layer conformally overlying said oxidized sidewall of said adhesion layer.
Claim 20
Dependent Claim
69 words
A microelectronic capacitor comprising: (a) a supporting layer having a principal surface; (b) a ruthenium layer overlying said principal surface of said supporting layer, said ruthenium layer comprising a top surface and an expanded, oxidized sidewall; (c) a platinum layer overlying said top surface of said ruthenium layer; (d) a barium strontium titanate layer overlying said platinum layer; and (e) an upper electrode overlying said barium strontium titanate layer.
Claim 21
Dependent Claim
69 words
A microelectronic capacitor comprising: (a) a supporting layer having a principal surface; (b) a ruthenium layer overlying said principal surface of said supporting layer, said ruthenium layer comprising a top surface and an expanded, oxidized sidewall; (c) a platinum layer overlying said top surface of said ruthenium layer; (d) a barium strontium titanate layer overlying said platinum layer; and (e) an upper electrode overlying said barium strontium titanate layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-10 | 2000-03-11 | 2000-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-10 | 2004-03-11 | 2004-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-10 | 2008-03-11 | 2008-09-10 | $7700.00 | Window Closed / Lapsed |