Vapor deposition of thin films

Claim 2

A nanocrystalline film comprised of a substantially carbon-free metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium, said film having a metal content of at least 97% by weight, said film having a thickness of from about 10 nanometers to about 250 nanometers, and said film having a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers, said film further characterized as having a substantially narrow distribution of crystal grain sizes within said film.

Claim 3

The film of claim 1 wherein the substantially carbon-free metal is rhodium.

Claim 4

The film of claim 1 wherein the substantially carbon-free metal is iridium.

Claim 5

The film of claim 1 wherein the metallic grain size is from about 2 to about 4 nanometers.

Claim 6

The film of claim 1 wherein the metal content of the film is at least 98% by weight.

Claim 7

An article comprised of a thermally sensitive substrate having a nanocrystalline coating thereon of a substantially carbon-free metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium, said coating having a metal content of at least 97% by weight, said coating having a thickness of from about 10 nanometers to about 250 nanometers, and said coating having a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers, said coating further characterized as having a substantially narrow distribution of crystal grain sizes within said coating.

Claim 8

An article comprised of a thermally sensitive substrate having a nanocrystalline coating thereon of a substantially carbon-free metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium, said coating having a metal content of at least 97% by weight, said coating having a thickness of from about 10 nanometers to about 250 nanometers, and said coating having a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers, said coating further characterized as having a substantially narrow distribution of crystal grain sizes within said coating.

Claim 9

The article of claim 6 wherein the substantially carbon-free metal is rhodium.

Claim 10

The article of claim 6 wherein the substantially carbon-free metal is iridium.

Claim 11

The article of claim 6 wherein the metallic grain size is from about 2 to about 4 nanometers.

Claim 12

A nanocrystalline film comprised of a substantially carbon-free metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium, said film having a metal content of at least 97% by weight, said film having a thickness of from about 10 nanometers to about 250 nanometers, and said film having a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers, said film further characterized as having a substantially narrow distribution of crystal grain sizes within said film, said film prepared by the process comprising passing: (a) a first gaseous stream including an inert gas and a precursor compound selected from the group consisting of rhodium(allyl) 3 , iridium(allyl) 3 , molybdenum(allyl) 4 , tungsten(allyl) 4 , rhenium(allyl) 4 , platinum(allyl) 2 , or palladium(allyl) 2 or the same wherein said allyl groups are substituted allyl groups; and, (b) a second gaseous stream including a hydrogen plasma, onto a heated target substrate for sufficient time to form said carbon-free metal film, said substrate heated at temperatures sufficient to decompose the precursor compound.

Claim 13

A nanocrystalline film comprised of a substantially carbon-free metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium, said film having a metal content of at least 97% by weight, said film having a thickness of from about 10 nanometers to about 250 nanometers, and said film having a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers, said film further characterized as having a substantially narrow distribution of crystal grain sizes within said film, said film prepared by the process comprising passing: (a) a first gaseous stream including an inert gas and a precursor compound selected from the group consisting of rhodium(allyl) 3 , iridium(allyl) 3 , molybdenum(allyl) 4 , tungsten(allyl) 4 , rhenium(allyl) 4 , platinum(allyl) 2 , or palladium(allyl) 2 or the same wherein said allyl groups are substituted allyl groups; and, (b) a second gaseous stream including a hydrogen plasma, onto a heated target substrate for sufficient time to form said carbon-free metal film, said substrate heated at temperatures sufficient to decompose the precursor compound.

Claim 14

The film of claim 10 wherein the target substrate is a thermally sensitive substrate and the heating at temperatures sufficient to decompose the precursor compound is insufficient to adversely affect the target substrate.

Claim 15

The film of claim 10 wherein the target substrate is heated at temperatures of from about 225° C. to about 275° C.

Claim 16

A process of using a hydrogen plasma to form a substantially carbon-free nanocrystalline film of a metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium from the chemical vapor deposition of an organometallic precursor containing one of said metals, said film having a metal content of at least about 97% by weight, said film having a thickness of from about 10 nanometers to about 250 nanometers, and said film having a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers, said process comprising: passing a first gaseous stream including an inert gas and a carbon-containing precursor compound selected from the group consisting of rhodium(allyl) 3 , iridium(allyl) 3 , molybdenum(allyl) 4 , tungsten(allyl) 4 , rhenium(allyl) 3 , platinum(allyl) 2 , or palladium(allyl) 2 or the same wherein said allyl groups are substituted allyl groups onto a heated target substrate; and simultaneously passing a second gaseous stream including a hydrogen plasma onto the heated target substrate, said heated target substrate at temperatures sufficient to decompose the carbon-containing precursor compound, and said first gaseous stream and said second gaseous stream passed simultaneously onto the heated substrate for sufficient time to form the substantially carbon-free metal film.

Claim 17

A process of using a hydrogen plasma to form a substantially carbon-free nanocrystalline film of a metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium from the chemical vapor deposition of an organometallic precursor containing one of said metals, said film having a metal content of at least about 97% by weight, said film having a thickness of from about 10 nanometers to about 250 nanometers, and said film having a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers, said process comprising: passing a first gaseous stream including an inert gas and a carbon-containing precursor compound selected from the group consisting of rhodium(allyl) 3 , iridium(allyl) 3 , molybdenum(allyl) 4 , tungsten(allyl) 4 , rhenium(allyl) 3 , platinum(allyl) 2 , or palladium(allyl) 2 or the same wherein said allyl groups are substituted allyl groups onto a heated target substrate; and simultaneously passing a second gaseous stream including a hydrogen plasma onto the heated target substrate, said heated target substrate at temperatures sufficient to decompose the carbon-containing precursor compound, and said first gaseous stream and said second gaseous stream passed simultaneously onto the heated substrate for sufficient time to form the substantially carbon-free metal film.

Claim 18

The process of claim 13 wherein the target substrate is a thermally sensitive substrate and the heating at temperatures sufficient to decompose the carbon-containing precursor compound is insufficient to adversely affect the target substrate.

Claim 19

The process of claim 13 wherein the target substrate is heated at temperatures from about 225° C. to about 275° C.

Claim 20

A process of using a hydrogen plasma to minimize the carbon content of a metallic film prepared from one or more organometallic precursor compounds, said process comprising: passing a first gaseous stream including the one or more organometallic precursor compounds for said metallic film and an inert gas onto a heated target substrate; and, simultaneously passing a second gaseous stream including a hydrogen plasma onto the heated target substrate, said heated substrate at temperatures sufficient to decompose the one or more organometallic precursor compounds, and said first gaseous stream and said second gaseous stream passed simultaneously onto the heated substrate for sufficient time to form a substantially carbon-free metal film.

Claim 21

A process of using a hydrogen plasma to minimize the carbon content of a metallic film prepared from one or more organometallic precursor compounds, said process comprising: passing a first gaseous stream including the one or more organometallic precursor compounds for said metallic film and an inert gas onto a heated target substrate; and, simultaneously passing a second gaseous stream including a hydrogen plasma onto the heated target substrate, said heated substrate at temperatures sufficient to decompose the one or more organometallic precursor compounds, and said first gaseous stream and said second gaseous stream passed simultaneously onto the heated substrate for sufficient time to form a substantially carbon-free metal film.

Claim 22

The process of claim 16 wherein the target substrate is a thermally sensitive substrate and the heating at temperatures sufficient to decompose the one or more organometallic precursor compounds is insufficient to adversely affect the target substrate.

Claim 23

The process of claim 17 wherein the target substrate is heated at temperatures from about 225° C. to about 275° C.

Claim 24

In a process of preparing a metal film of a metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium from the chemical vapor deposition of an organometallic precursor containing one of said metals by passing a first gaseous stream including an inert gas and a carbon-containing precursor compound selected from the group consisting of rhodium(allyl) 3 , iridium(allyl) 3 , molybdenum(allyl) 4 , tungsten(allyl) 4 , rhenium(allyl) 3 , platinum(allyl) 2 , palladium(allyl) 2 or the same wherein said allyl groups are substituted allyl groups, onto a heated target substrate at temperatures sufficient to decompose the carbon-containing precursor compound to form a metal film upon said substrate, the improvement comprising: simultaneously passing a second gaseous stream including a hydrogen plasma onto the heated target substrate for sufficient time whereby the resultant metal film is a substantially carbon-free nanocrystalline metal film having a metal content of at least about 97% by weight, a thickness of from about 10 nanometers to about 250 nanometers, and a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers.

Claim 25

In a process of preparing a metal film of a metal selected from the group consisting of rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium from the chemical vapor deposition of an organometallic precursor containing one of said metals by passing a first gaseous stream including an inert gas and a carbon-containing precursor compound selected from the group consisting of rhodium(allyl) 3 , iridium(allyl) 3 , molybdenum(allyl) 4 , tungsten(allyl) 4 , rhenium(allyl) 3 , platinum(allyl) 2 , palladium(allyl) 2 or the same wherein said allyl groups are substituted allyl groups, onto a heated target substrate at temperatures sufficient to decompose the carbon-containing precursor compound to form a metal film upon said substrate, the improvement comprising: simultaneously passing a second gaseous stream including a hydrogen plasma onto the heated target substrate for sufficient time whereby the resultant metal film is a substantially carbon-free nanocrystalline metal film having a metal content of at least about 97% by weight, a thickness of from about 10 nanometers to about 250 nanometers, and a crystalline structure therein with a metallic grain size of from about 2 to about 40 nanometers.

Claim 26

In the process of claim 19 wherein the improvement further comprises the target substrate being a thermally sensitive substrate and the substrate at temperatures sufficient to decompose the carbon-containing precursor compound but insufficient to adversely affect the target substrate.

Claim 27

In the process of claim 19 the improvement wherein the target substrate is heated at temperatures from about 225° C. to about 275° C.

Claim 28

In a process of preparing a metallic film from one or more organometallic precursor compounds by passing for sufficient time to form said metal film a first gaseous stream including the one or more organometallic precursor compounds and an inert gas onto a heated target substrate at temperatures sufficient to decompose the one or more organometallic precursor compounds, the improvement comprising: simultaneously passing a second gaseous stream including a hydrogen plasma onto the heated target substrate whereby the resultant metal film is substantially carbon-free.

Claim 29

In a process of preparing a metallic film from one or more organometallic precursor compounds by passing for sufficient time to form said metal film a first gaseous stream including the one or more organometallic precursor compounds and an inert gas onto a heated target substrate at temperatures sufficient to decompose the one or more organometallic precursor compounds, the improvement comprising: simultaneously passing a second gaseous stream including a hydrogen plasma onto the heated target substrate whereby the resultant metal film is substantially carbon-free.

Claim 30

In the process of claim 22 wherein the improvement further comprises the target substrate being a thermally sensitive substrate and the substrate at temperatures sufficient to decompose the one or more organometallic precursor compounds but insufficient to adversely affect the target substrate.

Claim 31

In the process of claim 23 the improvement wherein the target substrate is heated at temperatures from about 225° C. to about 275° C.