US4835005A
Expired / Lapsed
US
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Process for forming deposition film
Assignee: Canon Inc
•
Filing: 1988-02-22
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Granted: 1989-05-30
•
Expires: 2008-02-22
Abstract
Abstract A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.
Inventors
- 👤 Masaaki Hirooka
- 👤 Kyosuke Ogawa
- 👤 Shunichi Ishihara
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:47
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08278; H10F; H10F71/00; H10F71/10; H10F71/103; H10P14/24; H10P14/29; H10P14/2901; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
186 words
A process for forming a desposition film suitable for use in semiconductor devices or electrophotographic photosensitive devices on a substrate in a deposition space (A), which Comprises: forming a gaseous activated species (a) by decomposing a starting material selected from the group consisting of the compounds of the formulas: Si n X 2n+2 (SiX 2-n (n≧3) Si n HX 2n+1 Si n H 2 X 2n wherein n is an integer of at least 1 and X is selected from the group consisting of F, Cl, Br or I in a decomposition space forming a gaseous activated species (b) by decomposing another starting material wherein said another material is selected from the group consisting of a higher straight chain silane compound and a cyclic silane compound in a decomposition space (c); and separately introducing said gaseous activated species (a) and said gaseous activated species (b) into the deposition space, wherein the activated species is capable of undergoing chemical interaction with activated species (a) to form the film on the substrate, said process being conducted without exposing a film-forming surface of the substrate to a plasma atmosphere.
Claim 2
Dependent Claim
186 words
A process for forming a desposition film suitable for use in semiconductor devices or electrophotographic photosensitive devices on a substrate in a deposition space (A), which Comprises: forming a gaseous activated species (a) by decomposing a starting material selected from the group consisting of the compounds of the formulas: Si n X 2n+2 (SiX 2-n (n≧3) Si n HX 2n+1 Si n H 2 X 2n wherein n is an integer of at least 1 and X is selected from the group consisting of F, Cl, Br or I in a decomposition space forming a gaseous activated species (b) by decomposing another starting material wherein said another material is selected from the group consisting of a higher straight chain silane compound and a cyclic silane compound in a decomposition space (c); and separately introducing said gaseous activated species (a) and said gaseous activated species (b) into the deposition space, wherein the activated species is capable of undergoing chemical interaction with activated species (a) to form the film on the substrate, said process being conducted without exposing a film-forming surface of the substrate to a plasma atmosphere.
Claim 3
Dependent Claim
21 words
The process of claim 1, wherein the activated species formed in the decomposition space have lifetimes of at least 1 second.
Claim 4
Dependent Claim
21 words
The process of claim 1, wherein the activated species formed in the decomposition space have lifetimes of at least 150 seconds.
Claim 5
Dependent Claim
23 words
The process of claim 1, wherein the activated species formed in the decomposition space (C) has a lifetime of at most 10 seconds.
Claim 6
Dependent Claim
41 words
The process of claim 1, wherein the ratio of the volume of the activated species from the decomposition space (B) to the volume of the activated species from the decomposition space (C) is 10:1 to 1:10 at the deposition space (A).
Claim 7
Dependent Claim
95 words
A process for forming a deposition film on a substrate in deposition space (A) which comprises introducing separately activated species which are prepared by decomposing a silicon halide represented by the formula Si n X 2n+2 and a mixture of activated species of hydrogen with activated species (b) represented by the formula Si m H 2m-x , the mixture being prepared by decomposing a higher, straight chain silane compound, into the deposition space (A) wherein the film is formed on the substrate and wherein n, m, and x are each integers of at least 1.
Claim 8
Dependent Claim
95 words
A process for forming a deposition film on a substrate in deposition space (A) which comprises introducing separately activated species which are prepared by decomposing a silicon halide represented by the formula Si n X 2n+2 and a mixture of activated species of hydrogen with activated species (b) represented by the formula Si m H 2m-x , the mixture being prepared by decomposing a higher, straight chain silane compound, into the deposition space (A) wherein the film is formed on the substrate and wherein n, m, and x are each integers of at least 1.
Claim 9
Dependent Claim
84 words
A process for forming a deposition film in a substrate in a deposition space (A) on which comprises introducing separately activated species (a) which are prepared by decomposing a silicon halide represented by the formula Si n X 2n+2 , wherein n is an integer of at least 1, and a mixture of activated species of hydrogen with activated species (b), the mixture being prepared by decomposing a cyclic silane compound, into the deposition space (A) wherein the film is formed on the substrate.
Claim 10
Dependent Claim
84 words
A process for forming a deposition film in a substrate in a deposition space (A) on which comprises introducing separately activated species (a) which are prepared by decomposing a silicon halide represented by the formula Si n X 2n+2 , wherein n is an integer of at least 1, and a mixture of activated species of hydrogen with activated species (b), the mixture being prepared by decomposing a cyclic silane compound, into the deposition space (A) wherein the film is formed on the substrate.
Claim 11
Dependent Claim
24 words
The process of claim 1, wherein the activated species (a) are formed by utilizing any of electric discharge energy, thermal energy, and light energy.
Claim 12
Dependent Claim
17 words
The process of claim 1, wherein the activated species (a) formed include a p-type or n-type impurity.
Claim 13
Dependent Claim
24 words
The process of claim 6, wherein the activated species (a) are formed by utilizing any of electric discharge energy, thermal energy, and light energy.
Claim 14
Dependent Claim
17 words
The process of claim 6, wherein the activated species (a) formed include a p-type or n-type impurity.
Claim 15
Dependent Claim
24 words
The process of claim 7, wherein the activated species (a) are formed by utilizing any of electric discharge energy, thermal energy, and light energy.
Claim 16
Dependent Claim
17 words
The process of claim 7, wherein the activated species (a) formed include a p-type or n-type impurity.
Claim 17
Dependent Claim
132 words
A process for forming a deposition film suitable for use in semiconductor devices of electrophotographic photosensitive devices on a substrate in a deposition space, which comprises: forming a gaseous activated species by decomposing a starting material in a decomposition space wherein said gaseous activated species has a lifetime of at least 1 second; forming a gaseous activated species by decomposing another starting material in a decomposition space wherein said gaseous activated species has a lifetime of at most 10 seconds; and separately introducing said gaseous activated species and said gaseous activated species into the deposition space, wherein the activated species is capable of undergoing chemical interraction with activated species to form the film on the substrate, said process being conducted without exposing a film-forming surface of the substrate to a plasma atmosphere.
Claim 18
Dependent Claim
132 words
A process for forming a deposition film suitable for use in semiconductor devices of electrophotographic photosensitive devices on a substrate in a deposition space, which comprises: forming a gaseous activated species by decomposing a starting material in a decomposition space wherein said gaseous activated species has a lifetime of at least 1 second; forming a gaseous activated species by decomposing another starting material in a decomposition space wherein said gaseous activated species has a lifetime of at most 10 seconds; and separately introducing said gaseous activated species and said gaseous activated species into the deposition space, wherein the activated species is capable of undergoing chemical interraction with activated species to form the film on the substrate, said process being conducted without exposing a film-forming surface of the substrate to a plasma atmosphere.
Claim 19
Dependent Claim
21 words
The process of claim 14, wherein the activated species formed in the decomposition space have lifetimes of at least 150 seconds.
Claim 20
Dependent Claim
72 words
The process of claim 14, wherein the material to be fed into the decomposition space to form activated species is selected from the group consisting of the compounds of the formulas: Si n X 2n+2 (SiX 2 ) n (n≧3) Si n HX 2n+ Si n H 2 X 2n wherein n is an integer of at least 1 and X is selected from the group consisting of F,Cl, Br, or I.
Claim 21
Dependent Claim
26 words
The process of claim 14, wherein the material to be fed into the decomposition space to form activated species is a higher straight chain silane compound.
Claim 22
Dependent Claim
24 words
The process of claim 14, wherein the material to be fed into the decomposition space to form activated species is a cyclic silane compound.
Claim 23
Dependent Claim
33 words
The process of claim 14, wherein the amount ratio of the activated species from the decomposition space to the activated species from the decomposition space is 10:1 to 1:10 at the deposition space.
Claim 24
Dependent Claim
23 words
The process of claim 14, wherein the activated species are formed by utilizing any of electric discharge energy, thermal energy, and light energy.
Claim 25
Dependent Claim
16 words
The process of claim 14, wherein the activated species formed include a p-type or n-type impurity.
Claim 26
Dependent Claim
13 words
The process of claim 14 including employing said activated species containing silicon atoms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |