US4544423A
Expired / Lapsed
US
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Amorphous silicon semiconductor and process for same
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1984-02-10
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Granted: 1985-10-01
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Expires: 2004-02-10
Abstract
Abstract A process for preparing an amorphous silicon semiconductor comprising steps of plasma decomposing silicon compounds and carrying out photolysis of the silicon compounds. According to the process, the growth rate of the semiconductor is greatly increased. The obtained amorphous silicon semiconductor has excellent electrical and optical properties and is useful as a photovoltaic element.
Inventors
- 👤 Kazunori Tsuge
- 👤 Yoshihisa Tawada
- 👤 Yoshihiro Hamakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:37
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/48; C23C16/482; H10F10/00; H10F10/10; H10F10/17; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
59 words
A process for preparing an amorphous silicon semiconductor by treating a silicon compound under conditions which will cause the silicon compound to undergo photolysis and plasma decomposition, said process comprising: (a) irradiating the silicon compound with light of sufficient wave length and intensity to decompose the silicon compound and (b) subjecting the silicon compound to conditions of glow discharge.
Claim 2
Dependent Claim
59 words
A process for preparing an amorphous silicon semiconductor by treating a silicon compound under conditions which will cause the silicon compound to undergo photolysis and plasma decomposition, said process comprising: (a) irradiating the silicon compound with light of sufficient wave length and intensity to decompose the silicon compound and (b) subjecting the silicon compound to conditions of glow discharge.
Claim 3
Dependent Claim
17 words
The process of claim 1, wherein the plasma decomposition is carried out by high frequency glow discharge.
Claim 4
Dependent Claim
19 words
The process of claim 1, wherein the photolysis is carried out at the same time as the plasma decomposition.
Claim 5
Dependent Claim
15 words
The process of claim 1, wherein the photolysis is carried out before the plasma decomposition.
Claim 6
Dependent Claim
22 words
The process of claim 1, wherein the photolysis is carried out with light having a wavelength of not more than 5000 Å.
Claim 7
Dependent Claim
24 words
The process of claim 1, wherein the photolysis is carried out with light having an intensity of not less than 20 mW/cm 2 .
Claim 8
Dependent Claim
25 words
The process of claim 1, wherein the amorphous silicon semiconductor is doped with an element of Group III of Group V of the Periodic Table.
Claim 9
Dependent Claim
26 words
The process of claim 1, wherein the amorphous silicon semiconductor is an amorphous silicon, an amorphous silicon carbide, an amorphous silicon nitride or an admixture thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-30 | 1989-04-01 | 1989-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-30 | 1993-04-01 | 1993-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-30 | 1997-04-01 | 1997-10-01 | $7700.00 | Window Closed / Lapsed |