US4468443A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing photoconductive member from gaseous silicon compounds
Assignee: Canon Inc
•
Filing: 1982-03-04
•
Granted: 1984-08-28
•
Expires: 2002-03-04
Abstract
Abstract A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances is characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula: SinH2n+2(A) wherein n is a positive integer and the compounds of the formula: SimHlXk(B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said at least two compounds selected from the second group consisting of the compounds represented by the formulas (A) and (B) to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol. % based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound.
Inventors
- 👤 Isamu Shimizu
- 👤 Kyosuke Ogawa
- 👤 Eiichi Inoue
- 👤 Junichiro Kanbe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:46
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08278; H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
280 words
A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula: Si.sub.n H.sub.2n+2 (A) wherein n is a positive integer and the compounds of the formula: Si.sub.m H.sub.l X.sub.k (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said at least two compounds selected from the second group consisting of the compounds represented by the formulas (A) and (B) to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol.% based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound wherein at least 0.1 vol.% of (O), (N), or (C) based on compounds selected from (A) and (B).
Claim 2
Dependent Claim
280 words
A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula: Si.sub.n H.sub.2n+2 (A) wherein n is a positive integer and the compounds of the formula: Si.sub.m H.sub.l X.sub.k (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said at least two compounds selected from the second group consisting of the compounds represented by the formulas (A) and (B) to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol.% based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound wherein at least 0.1 vol.% of (O), (N), or (C) based on compounds selected from (A) and (B).
Claim 3
Dependent Claim
60 words
A process according to claim 1 wherein the compounds represented by the formula (A) are selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , Si 5 H 12 , Si 6 H 14 , Si 7 H 16 , and Si 8 H 18 .
Claim 4
Dependent Claim
53 words
A process according to claim 1 wherein the compounds represented by the formula (B) are selected from the group consisting of SiX 4 , Si 2 X 6 , Si 3 X 8 , SiHX 3 , SiH 2 X 2 , and SiH 3 X (wherein X is F, Cl, Br, I).
Claim 5
Dependent Claim
59 words
A process according to claim 1 wherein the high order compound with higher order number of m is at least one compound selected from the group consisting of Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , Si 2 F 6 , Si 2 Cl 6 , and Si 2 Br 6 .
Claim 6
Dependent Claim
30 words
A process according to claim 1 wherein the starting substances further contain a starting material for incorporation of an impurity which controls the conduction type of the photoconductive layer formed.
Claim 7
Dependent Claim
12 words
A process according to claim 5 wherein the impurity is n-type impurity.
Claim 8
Dependent Claim
13 words
A process according to claim 5 wherein the impurity is a p-type impurity.
Claim 9
Dependent Claim
104 words
A process according to claim 5 wherein the starting material is at least one selected from the group consisting of PH 3 , P 2 H 4 , PF 3 , PF 5 , PCl 3 , AsH 3 , AsF 3 , AsF 5 , AsCl 3 , SbH 3 , SbF 3 , SbF 5 , BiH 3 , BF 3 , BCl 3 , BBr 3 , B 2 H 6 , B 4 H 10 , B 5 H 9 , B 5 H 11 , B 6 H 10 , B 6 H 12 , and AlCl 3 .
Claim 10
Dependent Claim
28 words
A process according to claim 1 wherein the starting substances contain at least two kinds of compounds selected from the group of compounds represented by the formula (A).
Claim 11
Dependent Claim
28 words
A process according to claim 1 wherein the starting substances contain at least two kinds of compounds selected from the group of compounds represented by the formula (B).
Claim 12
Dependent Claim
46 words
A process according to claim 1 wherein the starting substances contain at least two kinds of compounds selected from the group of compounds represented by the formula (A) and at least one kind of compound selected from the group of compounds represented by the formula (B).
Claim 13
Dependent Claim
46 words
A process according to claim 1 wherein the starting substances contain at least one kind of compound selected from the group of compounds represented by the formula (A) and at least two kinds of compounds selected from the group of compounds represented by the formula (B).
Claim 14
Dependent Claim
103 words
A process according to claim 1 wherein the first group of substances consists of O 2 , O 3 , H 3 SiOSiH 3 , H 3 SiOSiH 2 OSiH 3 , N 2 , NH 3 , H 2 NNH 2 , HN 3 , NH 4 N 3 , F 3 N, F 4 N 2 , NO, NO 2 , N 2 O, N 2 O 3 , N 2 O 4 , N 2 O 5 and NO 3 , CO, CO 2 , saturates hydrocarbons, ethylenic hydrocarbons, acetylenic hydrocarbons, alkyl silanes, halogen-substituted paraffinic hydrocarbons, and halogen-containing alkyl silanes.
Claim 15
Dependent Claim
245 words
A photoconductive member, having a substrate for a photoconductive member and a photoconductive layer provided on said substrate, characterized in that said photoconductive layer comprises an amorphous silicon formed by discharge decomposition of gaseous starting substances containing at least one substance selected from the first group consisting of substances containing oxygen atoms as constituent atom, substances containing nitrogen atoms as constituent atom and substances containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula: Si.sub.n H.sub.2n+2 (A) wherein n is a positive integer and the compounds of the formula: Si.sub.m H.sub.l X.sub.k (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said at least two compounds selected from the second group consisting of the compounds represented by the formulas (A) and (B) being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol.% based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound wherein at least 0.1 vol.% of (O), (N), or (C) based on compounds selected from (A) and (B).
Claim 16
Dependent Claim
245 words
A photoconductive member, having a substrate for a photoconductive member and a photoconductive layer provided on said substrate, characterized in that said photoconductive layer comprises an amorphous silicon formed by discharge decomposition of gaseous starting substances containing at least one substance selected from the first group consisting of substances containing oxygen atoms as constituent atom, substances containing nitrogen atoms as constituent atom and substances containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula: Si.sub.n H.sub.2n+2 (A) wherein n is a positive integer and the compounds of the formula: Si.sub.m H.sub.l X.sub.k (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said at least two compounds selected from the second group consisting of the compounds represented by the formulas (A) and (B) being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol.% based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound wherein at least 0.1 vol.% of (O), (N), or (C) based on compounds selected from (A) and (B).
Claim 17
Dependent Claim
22 words
A photoconductive member according to claim 14 wherein there is further provided in intermediate layer between the substrate and the photoconductive layer.
Claim 18
Dependent Claim
15 words
A photoconductive member according to claim 14 wherein the intermediate layer is a barrier layer.
Claim 19
Dependent Claim
19 words
A photoconductive member according to claim 14 wherein the intermediate layer has a thickness of 30 Å to 2μ.
Claim 20
Dependent Claim
23 words
A photoconductive member according to claim 14 wherein the photoconductive layer contains hydrogen atoms in an amount of 1 to 40 atomic %.
Claim 21
Dependent Claim
23 words
A photoconductive member according to claim 14 wherein the photoconductive layer contains halogen atoms in an amount of 1 to 40 atomic %.
Claim 22
Dependent Claim
30 words
A photoconductive member according to claim 14 wherein the photoconductive layer contains hydrogen atoms and halogen atoms in an amount of 1 to 40 atomic % as the total content.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-28 | 1988-02-27 | 1988-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-28 | 1992-02-27 | 1992-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-28 | 1996-02-27 | 1996-08-28 | $7700.00 | Window Closed / Lapsed |