US4664937A
Expired / Lapsed
US
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Method of depositing semiconductor films by free radical generation
Assignee: Energy Conversion Devices Inc
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Filing: 1986-04-21
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Granted: 1987-05-12
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Expires: 2006-04-21
Abstract
Abstract A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 David D. Allred
- 👤 Lee Walter
- 👤 Stephen J. Hudgens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:49
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/3222; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; H01J37/32266; H01J37/32275; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
112 words
A process for depositing semiconductor alloy films onto a substrate, comprising: providing at least a first source of energy; providing a substantially enclosed reaction vessel containing the substrate; evacuating the reaction vessel to a pressure below atmospheric; providing at least a first gaseous mixture including a semiconductor-containing reaction gas; activating the energy source to form free radicals, including a first group of desired free radicals, from the first gaseous mixture; providing separate control over the free radicals; selectively incorporating the first group of desired free radicals into a semiconductor alloy film deposited onto the substrate at high deposition rates with high gas conversion efficiencies and without any significant powder or polymeric inclusions.
Claim 2
Dependent Claim
112 words
A process for depositing semiconductor alloy films onto a substrate, comprising: providing at least a first source of energy; providing a substantially enclosed reaction vessel containing the substrate; evacuating the reaction vessel to a pressure below atmospheric; providing at least a first gaseous mixture including a semiconductor-containing reaction gas; activating the energy source to form free radicals, including a first group of desired free radicals, from the first gaseous mixture; providing separate control over the free radicals; selectively incorporating the first group of desired free radicals into a semiconductor alloy film deposited onto the substrate at high deposition rates with high gas conversion efficiencies and without any significant powder or polymeric inclusions.
Claim 3
Dependent Claim
37 words
A process as in claim 1, wherein the gaseous mixture is activated at a location remote from the substrate and the first group of desired free radicals are operatively disposed relative to the substrate for deposition thereupon.
Claim 4
Dependent Claim
18 words
A process as in claim 1 wherein the gaseous mixtures are activated adjacent the substrate for deposition thereupon.
Claim 5
Dependent Claim
13 words
A process as in claim 1 wherein the first energy source is microwave.
Claim 6
Dependent Claim
15 words
A process as in claim 1 wherein a plurality of sources of energy is provided.
Claim 7
Dependent Claim
24 words
A process as in claim 5 wherein each of the plurality of sources is adapted to form the first group of desired free radicals.
Claim 8
Dependent Claim
42 words
A process as in claim 5 wherein additional gaseous mixtures differing from the first gaseous mixture are provided; and each of the additional gaseous mixtures being operatively associated with at least one of the plurality of sources other than the first source.
Claim 9
Dependent Claim
43 words
A process as in claim 7 wherein the first gaseous mixture includes Si for forming selected Si free radicals; a second gaseous mixture includes H for forming H free radicals; and the Si and H free radicals being discretely introduced adjacent the substrate.
Claim 10
Dependent Claim
21 words
A process as in claim 8 wherein the first gaseous mixture further includes fluorine for forming selected fluorinated Si free radicals.
Claim 11
Dependent Claim
43 words
A process as in claim 7, wherein the first gaseous mixture includes Si for forming selected Si free radicals; a second gaseous mixture includes F for forming the F free radicals; and Si and F free radicals being discretely introduced adjacent the substrate.
Claim 12
Dependent Claim
21 words
A process as in claim 10 wherein the first gaseous mixture further includes H for forming selected hydrogenated Si free radicals.
Claim 13
Dependent Claim
43 words
A process as in claim 7, wherein the first gaseous mixture includes Ge for forming selected Ge free radicals; a second gaseous mixture includes H for forming H free radicals; and the Ge and H free radicals being discretely introduced adjacent the substrate.
Claim 14
Dependent Claim
21 words
A process as in claim 12 wherein the first gaseous mixture further includes F for forming selected fluorinated Ge free radicals.
Claim 15
Dependent Claim
43 words
A process as in claim 7 wherein the first gaseous mixture includes Ge for forming selected Ge free radicals; a second gaseous mixture includes F for forming F free radicals; and the Ge and F free radicals being discretely introduced adjacent the substrate.
Claim 16
Dependent Claim
21 words
A process as in claim 14 wherein the first gaseous mixture further includes H for forming selected hydrogenated Ge free radicals.
Claim 17
Dependent Claim
45 words
A process as in claim 7 wherein the first gaseous mixture includes Ge and Si for forming selected Ge:Si free radicals; a second gaseous mixture includes H for forming H free radicals; and the Ge:Si and H free radicals being discretely introduced adjacent the substrate.
Claim 18
Dependent Claim
21 words
A process as in claim 16 wherein the first gaseous mixture further includes F for forming selected fluorinated Ge:Si free radicals.
Claim 19
Dependent Claim
45 words
A process as in claim 7 wherein the first gaseous mixture includes Ge and Si for forming selected Ge:Si free radicals; a second gaseous mixture includes F for forming F free radicals; and The Ge:Si and F free radicals being discretely introduced adjacent the substrate.
Claim 20
Dependent Claim
20 words
A process as in claim 18 wherein the first gaseous mixture further includes H for forming hydrogenated Ge:Si free radicals.
Claim 21
Dependent Claim
21 words
A process as in claim 4 wherein the reaction vessel is evacuated to a pressure of about 0.001 to 0.1 torr.
Claim 22
Dependent Claim
24 words
A process as in claim 7 wherein at least one of the additional gas mixtures includes a dopant for forming selected dopant-containing free radicals.
Claim 23
Dependent Claim
28 words
A process as in claim 7 wherein at least one of the additional gas mixtures includes a band gap adjuster for forming selected band gap adjuster-containing free radicals.
Claim 24
Dependent Claim
20 words
A process as in claim 1 wherein each of the at least one energy source is a free radical generator.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |