US5240739A
Expired / Lapsed
US
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Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers
Assignee: Micron Technology Inc
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Filing: 1992-08-07
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Granted: 1993-08-31
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Expires: 2012-08-07
Abstract
Abstract Disclosed is a chemical vapor deposition (CVD) method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor. Such includes, a) positioning a wafer within the CVD reactor; b) injecting selected quantities of gaseous TiCl 4 , a gaseous compound of the formula Si n H 2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl 4 and Si n H 2n+2 to deposit a film on the wafer, the film comprising a titanium silicide.
Inventors
- 👤 Trung T. Doan
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:35
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/414; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
112 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method consisting essentially of the following steps: positioning a wafer within the reactor; injecting selected quantities of gaseous TiCl 4 , a gaseous compound of the formula Si n H 2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl 4 and Si n H 2n+2 to deposit a film on the wafer, the film comprising a titanium silicide.
Claim 2
Dependent Claim
112 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method consisting essentially of the following steps: positioning a wafer within the reactor; injecting selected quantities of gaseous TiCl 4 , a gaseous compound of the formula Si n H 2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl 4 and Si n H 2n+2 to deposit a film on the wafer, the film comprising a titanium silicide.
Claim 3
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein n=2, and the selected temperature is from about 400° C. to about 800° C.
Claim 4
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein n=2, and the selected temperature is from about 400° C. to about 600° C.
Claim 5
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein n=3, and the selected temperature is from about 300° C. to about 800° C.
Claim 6
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein n=3, and the selected temperature is from about 300° C. to about 600° C.
Claim 7
Dependent Claim
21 words
The chemical vapor deposition method of claim 1 wherein the selected pressure is less than or equal to about 100 Torr.
Claim 8
Dependent Claim
21 words
The chemical vapor deposition method of claim 1 wherein the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 9
Dependent Claim
33 words
The chemical vapor deposition method of claim 1 wherein the quantities of gases are selected to provide a volumetric ratio of TiCl 4 to Si n H 2n+2 of from 1:100 to 100:1.
Claim 10
Dependent Claim
33 words
The chemical vapor deposition method of claim 1 wherein the quantities of gases are selected to provide a volumetric ratio of TiCl 4 to Si n H 2n+2 of from 1:10 to 10:1.
Claim 11
Dependent Claim
20 words
The chemical vapor deposition method of claim 1 wherein the titanium silicide of the film is predominately TiSi 2 .
Claim 12
Dependent Claim
17 words
The chemical vapor deposition method of claim 1 wherein the titanium silicide of the film comprises TiSi.
Claim 13
Dependent Claim
21 words
The chemical vapor deposition method of claim 1 wherein the titanium silicide of the film comprises Ti 5 Si 3 .
Claim 14
Dependent Claim
35 words
The chemical vapor deposition method of claim 1 wherein n=2, the selected temperature is from about 400° C. to about 600° C., and the selected pressure is less than or equal to about 100 Torr.
Claim 15
Dependent Claim
35 words
The chemical vapor deposition method of claim 1 wherein n=2, the selected temperature is from about 400° C. to about 600° C., and the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 16
Dependent Claim
35 words
The chemical vapor deposition method of claim 1 wherein n=3, the selected temperature is from about 300° C. to about 600° C., and the selected pressure is less than or equal to about 100 Torr.
Claim 17
Dependent Claim
35 words
The chemical vapor deposition method of claim 1 wherein n=3, the selected temperature is from about 300° C. to about 600° C., and the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 18
Dependent Claim
34 words
The chemical vapor deposition method of claim 1 wherein n=2, the selected temperature is from about 400° C. to about 600° C., and the titanium silicide of the film is predominately TiSi 2 .
Claim 19
Dependent Claim
34 words
The chemical vapor deposition method of claim 1 wherein n=3, the selected temperature is from about 300° C. to about 600° C., and the titanium silicide of the film is predominately TiSi 2 .
Claim 20
Dependent Claim
21 words
The chemical vapor deposition method of claim 1 comprising injecting multiple gaseous compounds of the formula Si n H 2n+2 .
Claim 21
Dependent Claim
133 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method consisting essentially of the following steps: positioning a wafer within the reactor; injecting selected quantities of gaseous TiCl 4 , a gaseous compound of the formula Si n H 2n+2 where "n" is 2 or 3, and a carrier gas to within the reactor; and maintaining the reactor at a pressure of less than or equal to about 100 Torr and at temperature from about 300° C. to about 800° C. which are effective for reacting the TiCl 4 and Si n H 2n+2 to deposit a film on the wafer, the film comprising titanium silicides of the formulas TiSi, TiSi 2 and Ti 5 Si 3 .
Claim 22
Dependent Claim
133 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method consisting essentially of the following steps: positioning a wafer within the reactor; injecting selected quantities of gaseous TiCl 4 , a gaseous compound of the formula Si n H 2n+2 where "n" is 2 or 3, and a carrier gas to within the reactor; and maintaining the reactor at a pressure of less than or equal to about 100 Torr and at temperature from about 300° C. to about 800° C. which are effective for reacting the TiCl 4 and Si n H 2n+2 to deposit a film on the wafer, the film comprising titanium silicides of the formulas TiSi, TiSi 2 and Ti 5 Si 3 .
Claim 23
Dependent Claim
20 words
The chemical vapor deposition method of claim 20 wherein the pressure is from about 0.5 Torr to about 30 Torr.
Claim 24
Dependent Claim
33 words
The chemical vapor deposition method of claim 20 wherein the quantities of gases are selected to provide a volumetric ratio of TiCl 4 to Si n H 2n+2 of from 1:100 to 100:1.
Claim 25
Dependent Claim
33 words
The chemical vapor deposition method of claim 20 wherein the quantities of gases are selected to provide a volumetric ratio of TiCl 4 to Si n H 2n+2 of from 1:10 to 10:1.
References Cited (Backward Citations)
US4568565A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-08-30 | 1997-03-01 | 1997-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-30 | 2001-03-01 | 2001-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-30 | 2005-03-01 | 2005-08-31 | $7700.00 | Window Closed / Lapsed |