US6136690A
Expired / Lapsed
US
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In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications
Assignee: Round Rock Research LLC
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Filing: 1998-02-13
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Granted: 2000-10-24
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Expires: 2018-02-13
Abstract
Abstract A method of de-oxidizing a surface onto which a refractory metal or molecule which contains a refractory metal atom will be adhered. The method utilizes a plasma which includes a gas such as argon, nitrogen, helium or hydrogen, or a mixture of any of the foregoing, to remove oxygen molecules from the surface to which adherence of the refractory metal is desired. Radicals in the plasma coat the surface to prevent further oxidation thereof. The method also includes techniques for depositing refractory metals onto a surface such as a substrate or layer of semiconductor material on which integrated circuitry has been fabricated.
Inventors
- 👤 Weimin Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10P; H10P14/00; H10P14/40; H10P14/418; H10W20/037; H10W20/041; H10W20/042; H10W20/045; H10W20/047; H10W20/048; H10W20/052; H10W20/0523; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 62
Claim 1
Independent Claim
52 words
A method of metallizing a semiconductor substrate surface, comprising: providing a semiconductor substrate including a semiconductor material layer and having an exposed surface; de-oxidizing said exposed surface with a plasma; depositing at least a first layer of base material onto said semiconductor material layer; and depositing a metal over said exposed surface.
Claim 2
Independent Claim
52 words
A method of metallizing a semiconductor substrate surface, comprising: providing a semiconductor substrate including a semiconductor material layer and having an exposed surface; de-oxidizing said exposed surface with a plasma; depositing at least a first layer of base material onto said semiconductor material layer; and depositing a metal over said exposed surface.
Claim 3
Dependent Claim
14 words
The method of claim 1, further comprising depositing said metal onto said first layer.
Claim 4
Dependent Claim
31 words
The method of claim 1, wherein said depositing at least said first layer of base material comprises depositing a material exhibiting greater adherence to said semiconductor material layer than said metal.
Claim 5
Dependent Claim
19 words
The method of claim 3, wherein said depositing at least said first layer of base material comprises depositing titanium.
Claim 6
Dependent Claim
20 words
The method of claim 1, wherein said base material layer exhibits greater adherence to said metal than said semiconductor material.
Claim 7
Dependent Claim
21 words
The method of claim 1, further comprising depositing a second layer of base material onto said first layer of base material.
Claim 8
Dependent Claim
14 words
The method of claim 6, further comprising depositing said metal onto said second layer.
Claim 9
Dependent Claim
39 words
The method of claim 6, wherein said depositing at least said first layer of base material comprises depositing a material with greater adherence to said semiconductor material layer than said second layer of base material and than said metal.
Claim 10
Dependent Claim
37 words
The method of claim 6, wherein said depositing said second layer of base material comprises depositing a material with greater adherence to said metal than said first layer of base material and than said semiconductor material layer.
Claim 11
Dependent Claim
19 words
The method of claim 6, wherein said depositing at least said first layer of base material comprises depositing titanium.
Claim 12
Dependent Claim
18 words
The method of claim 6, wherein said depositing said second layer of base material comprises depositing titanium nitride.
Claim 13
Dependent Claim
27 words
The method of claim 1, wherein said de-oxidizing comprises employing a plasma including a gas selected from the group consisting essentially of argon, nitrogen, helium and hydrogen.
Claim 14
Dependent Claim
28 words
The method of claim 1, further comprising forming a layer of an insulating material on at least one portion of said exposed surface where metallization is not desired.
Claim 15
Dependent Claim
38 words
The method of claim 1, wherein depositing said metal includes: forming at least one nucleation site on said exposed surface; and growing at least one nucleation site to form a layer of said metal on said exposed surface.
Claim 16
Dependent Claim
20 words
The method of claim 14, wherein forming said at least one nucleation site includes reducing a tungsten gas with silane.
Claim 17
Dependent Claim
16 words
The method of claim 14, wherein forming said layer includes reducing a tungsten gas with hydrogen.
Claim 18
Dependent Claim
22 words
The method of claim 4, wherein said de-oxidizing and said depositing said metal are performed in a chemical vapor deposition (CVD) chamber.
Claim 19
Independent Claim
45 words
A method of de-oxidizing a surface prior to depositing a layer of refractory metal onto the surface, comprising placing a plasma including a quantity of gas selected from the group consisting essentially of argon, nitrogen, helium, and hydrogen over the surface to remove oxidation therefrom.
Claim 20
Independent Claim
45 words
A method of de-oxidizing a surface prior to depositing a layer of refractory metal onto the surface, comprising placing a plasma including a quantity of gas selected from the group consisting essentially of argon, nitrogen, helium, and hydrogen over the surface to remove oxidation therefrom.
Claim 21
Dependent Claim
23 words
The method of claim 18, further comprising preventing further oxidation of the surface by including hydrogen in said gas to coat the surface.
Claim 22
Dependent Claim
22 words
The method of claim 18, further comprising preventing further oxidation of the surface prior to depositing said layer of refractory metal thereon.
Claim 23
Independent Claim
59 words
A method of metallizing a surface of a semiconductor substrate material, comprising: depositing a layer of base material onto the surface; placing a plasma over said base material layer to reduce oxidation on an exposed surface thereof; and depositing a refractory metal selected from the group consisting essentially of tungsten, molybdenum, tantalum and titanium onto said base material layer.
Claim 24
Independent Claim
59 words
A method of metallizing a surface of a semiconductor substrate material, comprising: depositing a layer of base material onto the surface; placing a plasma over said base material layer to reduce oxidation on an exposed surface thereof; and depositing a refractory metal selected from the group consisting essentially of tungsten, molybdenum, tantalum and titanium onto said base material layer.
Claim 25
Dependent Claim
14 words
The method of claim 21, wherein said depositing said refractory metal comprises depositing tungsten.
Claim 26
Dependent Claim
34 words
The method of claim 21, wherein said placing said plasma comprises placing a plasma including a gas selected from the group consisting essentially of argon, nitrogen, helium and hydrogen over said base material layer.
Claim 27
Dependent Claim
34 words
The method of claim 23, wherein said placing said plasma comprises placing a plasma including a gas including a quantity of argon over said base material layer to remove oxidation from the exposed surface.
Claim 28
Dependent Claim
27 words
The method of claim 23, wherein said placing said plasma comprises placing a plasma including a gas including a quantity of hydrogen over said base material layer.
Claim 29
Dependent Claim
25 words
The method of claim 25, further comprising preventing further oxidation of the exposed surface by including hydrogen in said gas to coat the exposed surface.
Claim 30
Dependent Claim
22 words
The method of claim 21, wherein placing said plasma and depositing said refractory metal occur in a chemical vapor deposition (CVD) chamber.
Claim 31
Dependent Claim
19 words
The method of claim 21, wherein said depositing said layer of base material comprises depositing a layer comprising titanium.
Claim 32
Dependent Claim
20 words
The method of claim 21, wherein said depositing said layer of base material comprises depositing a material comprising titanium nitride.
Claim 33
Dependent Claim
29 words
The method of claim 21, wherein said depositing said layer of base material comprises depositing a material exhibiting greater adherence to the semiconductor substrate material than said refractory metal.
Claim 34
Dependent Claim
29 words
The method of claim 21, wherein said depositing said layer of base material comprises depositing a material exhibiting greater adherence to said refractory metal than the semiconductor substrate material.
Claim 35
Dependent Claim
23 words
The method of claim 21, wherein said depositing said layer of base material comprises depositing a first sub-layer and a second, superimposed sub-layer.
Claim 36
Dependent Claim
21 words
The method of claim 32, wherein said depositing said retactory metal comprises depositing said refractory metal onto said second, superimposed sub-layer.
Claim 37
Dependent Claim
36 words
The method of claim 32, wherein said depositing said first sub-layer comprises depositing a material exhibiting greater adherence to the semiconductor substrate material than a material of said second, superimposed sub-layer and than said refractory metal.
Claim 38
Dependent Claim
36 words
The method of claim 32, wherein said depositing said second, superimposed sub-layer comprises depositing a material exhibiting greater adherence to said refractory metal than a material of said first sub-layer and than the semiconductor substrate material.
Claim 39
Dependent Claim
14 words
The method of claim 32, wherein said depositing said first sub-layer comprises depositing titanium.
Claim 40
Dependent Claim
16 words
The method of claim 32, wherein said depositing said second, superimposed sub-layer comprises depositing titanium nitride.
Claim 41
Independent Claim
61 words
A method of forming a contact, comprising: selecting a semiconductor substrate having a surface; depositing a layer of base material onto said surface; placing a plasma over said base material layer to reduce oxidation on an exposed surface thereof; and depositing a refractory metal selected from the group consisting essentially of tungsten, molybdenum, tantalum and titanium onto said base material layer.
Claim 42
Independent Claim
61 words
A method of forming a contact, comprising: selecting a semiconductor substrate having a surface; depositing a layer of base material onto said surface; placing a plasma over said base material layer to reduce oxidation on an exposed surface thereof; and depositing a refractory metal selected from the group consisting essentially of tungsten, molybdenum, tantalum and titanium onto said base material layer.
Claim 43
Dependent Claim
14 words
The method of claim 38, wherein said depositing said refractory metal comprises depositing tungsten.
Claim 44
Dependent Claim
34 words
The method of claim 38, wherein said placing said plasma comprises placing a plasma including a gas selected from the group consisting essentially of argon, nitrogen, helium and hydrogen over said base material layer.
Claim 45
Dependent Claim
24 words
The method of claim 38, wherein said placing said plasma comprises placing a plasma including a quantity of hydrogen over said base material layer.
Claim 46
Dependent Claim
25 words
The method of claim 41, further comprising preventing further oxidation of the exposed surface by including hydrogen in said gas to coat the exposed surface.
Claim 47
Dependent Claim
23 words
The method of claim 38, wherein said placing said plasma and depositing said refractory metal occur in a chemical vapor deposition (CVD) chamber.
Claim 48
Dependent Claim
26 words
The method of claim 38, wherein said depositing said base material comprises depositing a material exhibiting greater adherence to said semiconductor substrate than said refractory metal.
Claim 49
Dependent Claim
26 words
The method of claim 38, wherein said depositing said base material comprises depositing a material exhibiting greater adherence to said refractory metal than the semiconductor substrate.
Claim 50
Independent Claim
61 words
A method of filling a via, comprising: selecting a semiconductor substrate having a surface; depositing a layer of base material onto said surface; placing a plasma over said base material layer to reduce oxidation on an exposed surface thereof; and depositing a refractory metal selected from the group consisting essentially of tungsten, molybdenum, tantalum and titanium onto said base material layer.
Claim 51
Independent Claim
61 words
A method of filling a via, comprising: selecting a semiconductor substrate having a surface; depositing a layer of base material onto said surface; placing a plasma over said base material layer to reduce oxidation on an exposed surface thereof; and depositing a refractory metal selected from the group consisting essentially of tungsten, molybdenum, tantalum and titanium onto said base material layer.
Claim 52
Dependent Claim
14 words
The method of claim 46, wherein said depositing said refractory metal comprises depositing tungsten.
Claim 53
Dependent Claim
34 words
The method of claim 46, wherein said placing said plasma comprises placing, a plasma including a gas selected from the group consisting essentially of argon, nitrogen, helium and hydrogen over said base material layer.
Claim 54
Dependent Claim
24 words
The method of claim 46, wherein said placing said plasma comprises placing a plasma including a quantity of hydrogen over said base material layer.
Claim 55
Dependent Claim
25 words
The method of claim 49, further comprising preventing further oxidation of the exposed surface by including hydrogen in said gas to coat the exposed surface.
Claim 56
Dependent Claim
22 words
The method of claim 46, wherein placing said plasma and depositing said refractory metal occur in a chemical vapor deposition (CVD) chamber.
Claim 57
Dependent Claim
26 words
The method of claim 46, wherein said depositing said base material comprises depositing a material exhibiting greater adherence to said semiconductor substrate than said refractory metal.
Claim 58
Dependent Claim
26 words
The method of claim 46, wherein said depositing said base material comprises depositing a material exhibiting greater adherence to said refractory metal than the semiconductor substrate.
Claim 59
Independent Claim
60 words
A method of metallizing a semiconductor substrate surface comprising: providing a semiconductor substrate having an exposed surface; de-oxidizing said exposed surface with a plasma; forming at least one nucleation site on said exposed surface; and growing said at least one nucleation site to form a layer of metal comprising at least one of tungsten and molybdenum over said exposed surface.
Claim 60
Independent Claim
60 words
A method of metallizing a semiconductor substrate surface comprising: providing a semiconductor substrate having an exposed surface; de-oxidizing said exposed surface with a plasma; forming at least one nucleation site on said exposed surface; and growing said at least one nucleation site to form a layer of metal comprising at least one of tungsten and molybdenum over said exposed surface.
Claim 61
Dependent Claim
20 words
The method of claim 54, wherein forming said at least one nucleation site includes reducing a tungsten gas with silane.
Claim 62
Dependent Claim
16 words
The method of claim 54, wherein forming said layer includes reducing a tungsten gas with hydrogen.
References Cited (Backward Citations)
US4540607A
Cited
US5618382A
Cited
US5627105A
Cited
US6013575A
Cited
US5733816A
Cited
US5789318A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-24 | 2004-04-24 | 2004-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-24 | 2008-04-24 | 2008-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-24 | 2012-04-24 | 2012-10-24 | $7700.00 | Window Closed / Lapsed |