US5618382A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-frequency semiconductor wafer processing apparatus and method
Assignee: Applied Materials Inc
•
Filing: 1993-06-25
•
Granted: 1997-04-08
•
Expires: 2013-06-25
Abstract
Abstract A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
Inventors
- 👤 Donald M. Mintz
- 👤 Hiroji Hanawa
- 👤 Sasson Somekh
- 👤 Dan Maydan
- 👤 Kenneth S. Collins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:10
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32174; H05; H05H; H05H1/00; H05H1/24; H05H1/46; Y; Y10; Y10S; Y10S148/00; Y10S148/051
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
85 words
A process for performing a nonreactive plasma soft etch comprising the steps of: (a) providing an inert gas mixture within a plasma reactor chamber; and (b) coupling RF power to an electrode within the chamber, the RF power being of a frequency substantially higher than 13.56 MHz; (c) wherein the RF power level and frequency are selected so as to excite the gas mixture to a plasma state and so as to produce a self-bias on said electrode less than or equal to 500 volts.
Claim 2
Dependent Claim
85 words
A process for performing a nonreactive plasma soft etch comprising the steps of: (a) providing an inert gas mixture within a plasma reactor chamber; and (b) coupling RF power to an electrode within the chamber, the RF power being of a frequency substantially higher than 13.56 MHz; (c) wherein the RF power level and frequency are selected so as to excite the gas mixture to a plasma state and so as to produce a self-bias on said electrode less than or equal to 500 volts.
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein said frequency is in a range of 30 to 200 MHz.
Claim 4
Dependent Claim
12 words
The process of claim 2 wherein said frequency is above 137 MHz.
Claim 5
Dependent Claim
12 words
The process of claim 1 wherein said frequency is above 137 MHz.
Claim 6
Dependent Claim
27 words
The process of claim 1 wherein a pressure of said inert gas mixture within said plasma reactor chamber is in a range from 1 to 20 milliTorr.
Claim 7
Dependent Claim
12 words
The process of claim 1 wherein said inert gas mixture comprises argon.
Claim 8
Dependent Claim
14 words
The process of claim 6 wherein said inert gas mixture consists essentially of argon.
References Cited (Backward Citations)
US5223457A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-07 | 2000-10-07 | 2001-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-07 | 2004-10-07 | 2005-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-07 | 2008-10-07 | 2009-04-08 | $7700.00 | Window Closed / Lapsed |