US6214729B1
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Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
Assignee: Micron Technology Inc
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Filing: 1998-09-01
•
Granted: 2001-04-10
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Expires: 2018-09-01
Abstract
Abstract A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Inventors
- 👤 Stefan Uhlenbrock
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
150 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R 3 and R 4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure; each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide; x=1 to 3; n=0 to 4; y=0 to 4; and forming a metal-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
Claim 2
Independent Claim
150 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R 3 and R 4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure; each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide; x=1 to 3; n=0 to 4; y=0 to 4; and forming a metal-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
Claim 3
Dependent Claim
32 words
The method of claim 1 wherein the step of forming a metal-containing film comprises vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a vaporization technique.
Claim 4
Dependent Claim
18 words
The method of claim 2 wherein the vaporization technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein the semiconductor substrate is a silicon wafer.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein M is selected from the group consisting of Co, Rh, Ir, Fe, Ru, Os, Ni, Pd, and Pt.
Claim 7
Dependent Claim
32 words
The method of claim 1 wherein each R 1 , R 2 , R 5 , and R 6 is hydrogen and each R 7 and R 8 is a methyl group.
Claim 8
Dependent Claim
35 words
The method of claim 1 wherein each R 1 and R 2 is SiMe 3 , each R 5 and R 6 is hydrogen, and each R 7 and R 8 is a methyl group.
Claim 9
Dependent Claim
12 words
The method of claim 1 wherein the precursor composition is a liquid.
Claim 10
Dependent Claim
26 words
The method of claim 1 wherein the precursor composition is vaporized in the presence of a reaction gas, an inert carrier gas, or a combination thereof.
Claim 11
Dependent Claim
52 words
The method of claim 9 wherein the reaction gas is SiH 4 , Si 2 H 6 , NH 3 , N 2 H 4 , PH 3 , AsH 3 , GeH 4 , t-BuSbMe 2 , H 2 S, H 2 SE, CO, CH 4 , or Te(allyl) 2 .
Claim 12
Dependent Claim
21 words
The method of claim 1 wherein the metal containing film is a single transition metal or a transition metal alloy film.
Claim 13
Independent Claim
175 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more organic solvents and one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R 3 and R 4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure; each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide; x=1 to 3; n=0 to 4; y=0 to 4; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 14
Independent Claim
175 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more organic solvents and one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R 3 and R 4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure; each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide; x=1 to 3; n=0 to 4; y=0 to 4; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 15
Dependent Claim
32 words
The method of claim 12 wherein each R 1 , R 2 , R 5 , and R 6 is hydrogen and each R 7 and R 8 is a methyl group.
Claim 16
Dependent Claim
35 words
The method of claim 12 wherein each R 1 and R 2 is SiMe 3 , each R 5 and R 6 is hydrogen, and each R 7 and R 8 is a methyl group.
Claim 17
Independent Claim
144 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R 3 and R 4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure; each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide; x=1 to 3; n=0 to 4; y=0 to 4; and forming a metal-containing film from the precursor composition on a surface of the substrate.
Claim 18
Independent Claim
144 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R 3 and R 4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure; each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide; x=1 to 3; n=0 to 4; y=0 to 4; and forming a metal-containing film from the precursor composition on a surface of the substrate.
Claim 19
Dependent Claim
30 words
The method of claim 15 wherein the step of forming a metal-containing film comprises vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique.
Claim 20
Dependent Claim
12 words
The method of claim 16 wherein the precursor composition is a liquid.
Claim 21
Dependent Claim
32 words
The method of claim 15 wherein each R 1 , R 2 , R 5 , and R 6 is hydrogen and each R 7 and R 8 is a methyl group.
Claim 22
Dependent Claim
35 words
The method of claim 15 wherein each R 1 and R 2 is SiMe 3 , each R 5 and R 6 is hydrogen, and each R 7 and R 8 is a methyl group.
Claim 23
Independent Claim
165 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more organic solvents and one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R 3 and R 4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure; each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide; x=1 to 3; n=0 to 4; y=0 to 4; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on a surface of the substrate.
Claim 24
Independent Claim
165 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more organic solvents and one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R 3 and R 4 are both methyl and optionally the R groups are replaced by multiple bonds between backbone atoms in the structure; each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide; x=1 to 3; n=0 to 4; y=0 to 4; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on a surface of the substrate.
Claim 25
Dependent Claim
32 words
The method of claim 20 wherein each R 1 , R 2 , R 5 , and R 6 is hydrogen and each R 7 and R 8 is a methyl group.
Claim 26
Dependent Claim
35 words
The method of claim 20 wherein each R 1 and R 2 is SiMe 3 , each R 5 and R 6 is hydrogen, and each R 7 and R 8 is a methyl group.
Claim 27
Independent Claim
97 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R 1 and R 2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group; and forming a metal-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
Claim 28
Independent Claim
97 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R 1 and R 2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group; and forming a metal-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
Claim 29
Independent Claim
122 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more organic solvents and one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R 1 and R 2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 30
Independent Claim
122 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more organic solvents and one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R 1 and R 2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 31
Independent Claim
91 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R 1 and R 2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group; and forming a metal-containing film from the precursor composition on a surface of the substrate.
Claim 32
Independent Claim
91 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R 1 and R 2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group; and forming a metal-containing film from the precursor composition on a surface of the substrate.
Claim 33
Independent Claim
112 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more organic solvents and one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R 1 and R 2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on a surface of the substrate.
Claim 34
Independent Claim
112 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more organic solvents and one or more complexes having a structure of the formula: wherein: M is a transition metal selected from the group consisting of IB, IIB, IIIB, IVB, VB, VIB, VIIB, and VIIIB metals; each R 1 and R 2 group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on a surface of the substrate.
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| 3.5 Years (Year 4) | 2004-04-09 | 2004-10-09 | 2005-04-10 | $2000.00 | Window Closed / Lapsed |
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