US5036022A
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Metal organic vapor phase epitaxial growth of group III-V semiconductor materials
Assignee: International Business Machines Corp
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Filing: 1990-11-01
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Granted: 1991-07-30
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Expires: 2010-11-01
Abstract
Abstract This invention is directed to a method of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) of Group III-V compound semiconductors in a hot wall reactor. Epitaxy is accomplished by use of precursors having a metal, an organic ligand, and an inorganic ligand. The system is operated at very low pressures to provide a high throughput of wafers and a highly uniform deposition growth. The invention is further directed to the use of the class of precursors to selectively grow III-V compounds on a masked substrate, wherein growth occurs epitaxially on the exposed areas of the substrate but not on the surrounding mask.
Inventors
- 👤 Thomas F. Kuech
- 👤 Michael A. Tischler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:00
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/11
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
87 words
A method of depositing III-V compounds on a semiconductor substrate comprising the step of: introducing at least one organometallic compound of the formula MR.sub.2-y X.sub.1+y wherein M is a Group III metal atom R is an organic ligand or a halo-substituted organic ligand; X is an inorganic ligand and y is 0 or 1 and at least one compound of a Group V element into a hot wall MOVPE system at temperatures and pressures sufficient to epitaxially deposit at least one III-V compound on a semiconductor substrate.
Claim 2
Independent Claim
87 words
A method of depositing III-V compounds on a semiconductor substrate comprising the step of: introducing at least one organometallic compound of the formula MR.sub.2-y X.sub.1+y wherein M is a Group III metal atom R is an organic ligand or a halo-substituted organic ligand; X is an inorganic ligand and y is 0 or 1 and at least one compound of a Group V element into a hot wall MOVPE system at temperatures and pressures sufficient to epitaxially deposit at least one III-V compound on a semiconductor substrate.
Claim 3
Dependent Claim
23 words
A method according to claim 1 wherein the pressure of the MOVPE system is maintained in the range of 0.001 to 10 torr.
Claim 4
Dependent Claim
21 words
A method according to claim 2 wherein the temperature of the MOVPE system is maintained at a temperature of 200°-800° C.
Claim 5
Dependent Claim
17 words
A method according to claim 1 wherein R is alkyl or halo-substituted alkyl; and X is halogen.
Claim 6
Dependent Claim
33 words
A method according to claim 1 including a second step of introducing a first of said organometallic compounds having a first M and a second of said organometallic compounds having a second M.
Claim 7
Dependent Claim
12 words
A method according to claim 1 wherein a doping compound is introduced.
Claim 8
Dependent Claim
26 words
A method according to claim 1 wherein the substrate is a masked substrate and the III-V compound is selectively deposited on unmasked areas of the substrate.
Claim 9
Independent Claim
94 words
A method for epitaxially growing a III-V compound semiconductor on a substrate comprising: (a) positioning in a hot wall reaction chamber at least one substrate of a material having a surface suitable for epitaxial growth; (b) introducing into said hot wall reaction chamber a gaseous mixture including at least one organometallic halide compound of a Group III metal and at least one compound of a Group V element under conditions of suitable temperature and pressure; and (c) depositing on said at least one substrate an epitaxial layer of at least one III-V compound semiconductor.
Claim 10
Independent Claim
94 words
A method for epitaxially growing a III-V compound semiconductor on a substrate comprising: (a) positioning in a hot wall reaction chamber at least one substrate of a material having a surface suitable for epitaxial growth; (b) introducing into said hot wall reaction chamber a gaseous mixture including at least one organometallic halide compound of a Group III metal and at least one compound of a Group V element under conditions of suitable temperature and pressure; and (c) depositing on said at least one substrate an epitaxial layer of at least one III-V compound semiconductor.
Claim 11
Dependent Claim
23 words
A method as in claim 8 wherein the pressure of the reaction chamber is maintained in the range of 0.001 to 10 Torr.
Claim 12
Dependent Claim
43 words
A method as in claim 9 wherein said at least one organometallic halide compound is of the formula MR.sub.2-y X.sub.1+y wherein M is a Group III metal atom, R is alkyl or halo-substituted alkyl, X is halogen, and y is 0 or 1
Claim 13
Dependent Claim
12 words
A method as in claim 10 wherein said III-V compound is GaAs.
Claim 14
Dependent Claim
12 words
A method as in claim 10 wherein said III-V compound is InP.
Claim 15
Dependent Claim
43 words
A method as in claim 10 wherein said at least one organometallic halide compound of a Group III element includes a first organometallic halide compound of a first Group III element and a second organometallic halide compound of a second Group III element.
Claim 16
Dependent Claim
23 words
A method as in claim 13 wherein said compound is Al x Ga 1-x As where x is in the range of 0≦x≦1.
Claim 17
Dependent Claim
24 words
A method as in claim 13 wherein said III-V compound is Al x Ga 1-x P where x is in the range of 0≦x≦1.
Claim 18
Dependent Claim
29 words
A method as in claim 13 wherein said at least one compound of a Group V element includes a first Group V element and a second Group V element.
Claim 19
Dependent Claim
32 words
A method as in claim 16 wherein III-V compound is In x Ga 1-x As y P 1-y where x is in the range 0≦x≦1 and y is in the range 0≦y≦1.
Claim 20
Dependent Claim
27 words
A method as in claim 13 wherein said at least one organometallic halide compound further includes a third organometallic halide compound of a third Group III element.
Claim 21
Dependent Claim
35 words
A method as in claim 18 wherein said III-V compound is (Al x Ga 1-x ) y In 1-y P where x is in the range of 0≦x≦1 and y is in the range 0≦y≦1.
Claim 22
Dependent Claim
34 words
The method of claim 8 wherein step (a) includes vertically stacking a plurality of substrates and wherein said III-V compound semiconductor is deposited on each of said substrates substantially uniformly on said substrate surface.
Claim 23
Dependent Claim
22 words
The method of claim 20 wherein the plurality of substrates are stacked with a substrate to substrate separation of about 1-10 mm.
Claim 24
Independent Claim
92 words
A method for selectively epitaxially growing a III-V compound semiconductor on a substrate comprising (a) positioning in a hot wall reaction chamber a masked substrate of a material suitable for epitaxial growth having masked and unmasked areas; (b) introducing into said reaction chamber at least one organometallic halide compound of a Group III metal and at least one compound of a Group V element under conditions of suitable temperature and pressure; and (c) selectively depositing on the unmasked areas of the substrate an epitaxial layer of at least one III-V compound semiconductor.
Claim 25
Independent Claim
92 words
A method for selectively epitaxially growing a III-V compound semiconductor on a substrate comprising (a) positioning in a hot wall reaction chamber a masked substrate of a material suitable for epitaxial growth having masked and unmasked areas; (b) introducing into said reaction chamber at least one organometallic halide compound of a Group III metal and at least one compound of a Group V element under conditions of suitable temperature and pressure; and (c) selectively depositing on the unmasked areas of the substrate an epitaxial layer of at least one III-V compound semiconductor.
Claim 26
Dependent Claim
25 words
A method as in claim 22 wherein the hot wall reaction chamber is heated to a temperature in the range of to 200°to 800° C.
Claim 27
Dependent Claim
23 words
A method as in claim 23 wherein the pressure of the reaction chamber is maintained in the range of 0.001 to 10 torr.
Claim 28
Dependent Claim
43 words
A method as in claim 22 wherein said at least one organometallic halide compound is of the formula MR.sub.2-y X.sub.1+y wherein M is a Group III metal atom, R is alkyl or halo-substituted alkyl, X is halogen, and y is 0 or 1.
Claim 29
Dependent Claim
12 words
A method as in claim 22 wherein said III-V compound is GaAs.
Claim 30
Dependent Claim
19 words
A method as in claim 26 wherein said organometallic halide compound is Ga(C 2 H 5 ) 2 Cl.
Claim 31
Dependent Claim
12 words
A method as in claim 22 wherein said III-V compound is InP.
Claim 32
Dependent Claim
43 words
A method as in claim 22 wherein said at least one organometallic halide compound of a Group III element includes a first organometallic halide compound of a first Group III element and a second organometallic halide compound of a second Group III element.
Claim 33
Dependent Claim
24 words
A method as in claim 29 wherein said III-V compound is Al x Ga 1-x As where x is in the range of 0≦x≦1.
Claim 34
Dependent Claim
23 words
A method as in claim 29 wherein said III-V compound is Al x Ga 1-x P where x is the range of 0≦x≦1.
Claim 35
Dependent Claim
29 words
A method as in claim 29 wherein said at least one compound of a Group V element includes a first Group V element and a second group V element.
Claim 36
Dependent Claim
33 words
A method as in claim 32 wherein said III-V compound is IN x Ga 1-x As y P 1-y where x is in the range 0≦x≦1 and y is in the range 0≦y≦1.
Claim 37
Dependent Claim
27 words
A method as in claim 29 wherein said at least one organometallic halide compound further includes a third organometallic halide compound of a third Group III element.
Claim 38
Dependent Claim
35 words
A method as in claim 34 wherein said III-V compound is (Al x Ga 1-x ) z In 1-y P where x is in the rang eof 0≦x≦1 and y is in the range 0≦y≦1.
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| 3.5 Years (Year 4) | 1994-07-29 | 1995-01-28 | 1995-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-29 | 1999-01-28 | 1999-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-29 | 2003-01-28 | 2003-07-30 | $7700.00 | Window Closed / Lapsed |