Selective OMCVD growth of compound semiconductor materials on silicon substrates

Claim 1

A method of forming compound semiconductor material on selected areas of a Si substrate comprising the steps of: (a) forming a protective layer of the Si substrate; (b) forming openings through protective layer to form a patterned substrate of exposed regions on the surface of said Si substrate where the compound semiconductor material is to be formed; (c) removing any remaining protective layer material at the openings by a wash solution followed by a rinse solution; (d) removing any residual material from the exposed surfaces of the Si substrate; (e) surface treating the patterned substrate by elevating the temperature thereof to again clean off the exposed Si surfaces just prior to deposition; (f) depositing an initial thin layer of GaAs on the patterned substrate by OMCVD of arsine and gallium containing reactants at a low substrate temperature between about 350° to 450° C. and high arsine flow such that GaAs is expitaxially formed on the exposed Si surfaces and substantially no nucleation and, hence, no film formation, occurs on the protective layer surfaces. (g) elevating the substrate temperature and continuing to grow epitaxial GaAs over the initially formed GaAs layer portions only.

Claim 2

A method of forming compound semiconductor material on selected areas of a Si substrate comprising the steps of: (a) forming a protective layer of the Si substrate; (b) forming openings through protective layer to form a patterned substrate of exposed regions on the surface of said Si substrate where the compound semiconductor material is to be formed; (c) removing any remaining protective layer material at the openings by a wash solution followed by a rinse solution; (d) removing any residual material from the exposed surfaces of the Si substrate; (e) surface treating the patterned substrate by elevating the temperature thereof to again clean off the exposed Si surfaces just prior to deposition; (f) depositing an initial thin layer of GaAs on the patterned substrate by OMCVD of arsine and gallium containing reactants at a low substrate temperature between about 350° to 450° C. and high arsine flow such that GaAs is expitaxially formed on the exposed Si surfaces and substantially no nucleation and, hence, no film formation, occurs on the protective layer surfaces. (g) elevating the substrate temperature and continuing to grow epitaxial GaAs over the initially formed GaAs layer portions only.