US5084128A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low-temperature synthesis of group III-group V semiconductors
Assignee: EIDP Inc
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Filing: 1990-10-23
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Granted: 1992-01-28
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Expires: 2010-10-23
Abstract
Abstract This invention relates to a low-temperature process for the preparation of group III-group V semiconducting material. More particularly, in the present process at least one group III compound is reacted with at least one group V compound in an aprotic solvent to form a precursor, which is then heated to form the semiconducting material.
Inventors
- 👤 Ralph T. Baker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:20
CPC Classifications
C; C30; C30B; C30B15/00; C01; C01B; C01B25/00; C01B25/08; C01B25/082; C01B25/087; C01B25/088; C22; C22C; C22C1/00; C22C1/007; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S148/00; Y10S148/065
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
132 words
A process for the preparation of a group III-group V compound comprising: (a) reacting at least one group III compound independently selected from the group consisting of M(ER 2 ) 3 and Al(PR' 2 ) 3 , wherein M=Ga or In; E=P or As; R=t-C 4 H 9 , CH[Si(CH 3 ) 3 ] 2 or Si(CH 3 ) 3 , R'=i-C 3 H 7 , CH 2 C(CH 3 ) 3 , CH 2 Si(CH 3 ) 3 or C 6 H 12 , with at least one group V compound independently selected from EH 3 , where E'=P, As, or Sb, in an aprotic solvent to form a precursor; and (b) heating the precursor to a temperature up to 400° C. sufficient to form a semiconducting group III-group V material.
Claim 2
Dependent Claim
132 words
A process for the preparation of a group III-group V compound comprising: (a) reacting at least one group III compound independently selected from the group consisting of M(ER 2 ) 3 and Al(PR' 2 ) 3 , wherein M=Ga or In; E=P or As; R=t-C 4 H 9 , CH[Si(CH 3 ) 3 ] 2 or Si(CH 3 ) 3 , R'=i-C 3 H 7 , CH 2 C(CH 3 ) 3 , CH 2 Si(CH 3 ) 3 or C 6 H 12 , with at least one group V compound independently selected from EH 3 , where E'=P, As, or Sb, in an aprotic solvent to form a precursor; and (b) heating the precursor to a temperature up to 400° C. sufficient to form a semiconducting group III-group V material.
Claim 3
Dependent Claim
29 words
The process of claim 1 wherein M(ER 2 ) 3 is Ga[P(t-C 4 H 9 ) 2 ] 3 or In[P(t-C 4 H 9 ) 2 ] 3 .
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein E'H 3 is PH 3 .
Claim 5
Dependent Claim
22 words
The process of claim 1 wherein the aprotic solvent is selected from the group consisting of ethers, aliphatic hydrocarbons, and aromatic hydrocarbons.
Claim 6
Dependent Claim
11 words
The process of claim 4 wherein the aprotic solvent is tetrahydrofuran.
Claim 7
Dependent Claim
11 words
The process of claim 4 wherein the aprotic solvent is toluene.
Claim 8
Dependent Claim
22 words
The process of claim 1 wherein the precursor is heated to a temperature of from about 50° C. to about 400° C.
Claim 9
Dependent Claim
22 words
The process of claim 7 wherein the precursor is heated to a temperature of from about 350° C. to about 400° C.
Claim 10
Dependent Claim
37 words
The process of claim 1 wherein the group III compound is dissolved in the aprotic solvent to form a solution and the group V compound is introduced thereto by bubbling the group V compound through the solution.
Claim 11
Dependent Claim
13 words
The process of claim 1 wherein the precursor is isolated prior to heating.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |