Patent US3249238A successfully refreshed from Google Patents.
Patent US5084128A successfully refreshed from Google Patents.
US5084128A
Expired / Lapsed
US
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Low-temperature synthesis of group III-group V semiconductors
Assignee: EIDP Inc
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Filing: 1990-10-23
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Granted: 1992-01-28
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Expires: 2010-10-23
Abstract
Abstract This invention relates to a low-temperature process for the preparation of group III-group V semiconducting material. More particularly, in the present process at least one group III compound is reacted with at least one group V compound in an aprotic solvent to form a precursor, which is then heated to form the semiconducting material.
Inventors
- 👤 Ralph T. Baker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:34
CPC Classifications
C; C30; C30B; C30B15/00; C01; C01B; C01B25/00; C01B25/08; C01B25/082; C01B25/087; C01B25/088; C22; C22C; C22C1/00; C22C1/007; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S148/00; Y10S148/065
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
132 words
A process for the preparation of a group III-group V compound comprising: (a) reacting at least one group III compound independently selected from the group consisting of M(ER 2 ) 3 and Al(PR' 2 ) 3 , wherein M=Ga or In; E=P or As; R=t-C 4 H 9 , CH[Si(CH 3 ) 3 ] 2 or Si(CH 3 ) 3 , R'=i-C 3 H 7 , CH 2 C(CH 3 ) 3 , CH 2 Si(CH 3 ) 3 or C 6 H 12 , with at least one group V compound independently selected from EH 3 , where E'=P, As, or Sb, in an aprotic solvent to form a precursor; and (b) heating the precursor to a temperature up to 400° C. sufficient to form a semiconducting group III-group V material.
Claim 2
Dependent Claim
132 words
A process for the preparation of a group III-group V compound comprising: (a) reacting at least one group III compound independently selected from the group consisting of M(ER 2 ) 3 and Al(PR' 2 ) 3 , wherein M=Ga or In; E=P or As; R=t-C 4 H 9 , CH[Si(CH 3 ) 3 ] 2 or Si(CH 3 ) 3 , R'=i-C 3 H 7 , CH 2 C(CH 3 ) 3 , CH 2 Si(CH 3 ) 3 or C 6 H 12 , with at least one group V compound independently selected from EH 3 , where E'=P, As, or Sb, in an aprotic solvent to form a precursor; and (b) heating the precursor to a temperature up to 400° C. sufficient to form a semiconducting group III-group V material.
Claim 3
Dependent Claim
29 words
The process of claim 1 wherein M(ER 2 ) 3 is Ga[P(t-C 4 H 9 ) 2 ] 3 or In[P(t-C 4 H 9 ) 2 ] 3 .
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein E'H 3 is PH 3 .
Claim 5
Dependent Claim
22 words
The process of claim 1 wherein the aprotic solvent is selected from the group consisting of ethers, aliphatic hydrocarbons, and aromatic hydrocarbons.
Claim 6
Dependent Claim
11 words
The process of claim 4 wherein the aprotic solvent is tetrahydrofuran.
Claim 7
Dependent Claim
11 words
The process of claim 4 wherein the aprotic solvent is toluene.
Claim 8
Dependent Claim
22 words
The process of claim 1 wherein the precursor is heated to a temperature of from about 50° C. to about 400° C.
Claim 9
Dependent Claim
22 words
The process of claim 7 wherein the precursor is heated to a temperature of from about 350° C. to about 400° C.
Claim 10
Dependent Claim
37 words
The process of claim 1 wherein the group III compound is dissolved in the aprotic solvent to form a solution and the group V compound is introduced thereto by bubbling the group V compound through the solution.
Claim 11
Dependent Claim
13 words
The process of claim 1 wherein the precursor is isolated prior to heating.
References Cited (Backward Citations)
US3309176A
Cited
GB1001144A
Cited
US3175975A
Cited
GB1180314A
Cited
US3647578A
Cited
US3767472A
Cited
US3947549A
Cited
US4436769A
Cited
US4716130A
Cited
US4833103A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |