US5112432A
Expired / Lapsed
US
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Organometallic compounds
Assignee: Merck Patent GmbH
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Filing: 1989-08-03
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Granted: 1992-05-12
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Expires: 2009-08-03
Abstract
Abstract In a process for the production of thin films and epitaxial layers by gas-phase deposition, intramolecularly stabilized organometallic compounds are employed as a source of metal.
Inventors
- 👤 Dietrich Erdmann
- 👤 Max E. Van Ghemen
- 👤 Ludwig Pohl
- 👤 Herbert Schumann
- 👤 Uwe Hartmann
- 👤 Wilfried Wassermann
- 👤 Meino Heyen
- 👤 Holger Jurgensen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C30; C30B; C30B25/00; C30B25/02; C07; C07F; C07F5/00; C23C16/00; C23C16/06; C23C16/18; C30B29/00; C30B29/02; C30B29/10; C30B29/40
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
199 words
In a process for gas-phase deposition of a metal compound containing Al, In or Ga on a substrate, the improvement wherein a source of Al, In or Ga for the deposition process is an organometallic compound of the formula ##STR5## wherein M is Al, In or Ga; X is --(CHR 5 ) n -- where n=2, 3, 4 or 5, --2--C 6 H 4 --(CH 2 ) m --, --(CH 2 ) m --, --(CH 2 ) m --2--C 6 H 4 --, --2--C 6 H 10 --(CH 2 ) m --, or --(CH 2 ) m --2--C 6 H 10 -- where m=1 or 2; R 5 is H or alkyl containing 1-4 carbon atoms; Y is --PR 3 R 4 , --AsR 3 R 4 , SbR 3 R 4 , or a 5- or 6-membered heterocyclic ring where the heteroatoms are from group 5A; and R 1 , R 2 , R 3 and R 4 are each independently H, straight-chain or branched alkyl containing 1-8 carbon atoms, partially or completely fluorinated straight-chain or branched alkyl containing 1-8 carbon atoms, cycloalkyl, alkenyl or cycloalkenyl containing in each case 3-8 carbon atoms, unsubstituted phenyl or substituted phenyl.
Claim 2
Dependent Claim
199 words
In a process for gas-phase deposition of a metal compound containing Al, In or Ga on a substrate, the improvement wherein a source of Al, In or Ga for the deposition process is an organometallic compound of the formula ##STR5## wherein M is Al, In or Ga; X is --(CHR 5 ) n -- where n=2, 3, 4 or 5, --2--C 6 H 4 --(CH 2 ) m --, --(CH 2 ) m --, --(CH 2 ) m --2--C 6 H 4 --, --2--C 6 H 10 --(CH 2 ) m --, or --(CH 2 ) m --2--C 6 H 10 -- where m=1 or 2; R 5 is H or alkyl containing 1-4 carbon atoms; Y is --PR 3 R 4 , --AsR 3 R 4 , SbR 3 R 4 , or a 5- or 6-membered heterocyclic ring where the heteroatoms are from group 5A; and R 1 , R 2 , R 3 and R 4 are each independently H, straight-chain or branched alkyl containing 1-8 carbon atoms, partially or completely fluorinated straight-chain or branched alkyl containing 1-8 carbon atoms, cycloalkyl, alkenyl or cycloalkenyl containing in each case 3-8 carbon atoms, unsubstituted phenyl or substituted phenyl.
Claim 3
Dependent Claim
12 words
A process according to claim 1, wherein an epitaxial layer is deposited.
Claim 4
Dependent Claim
12 words
A process according to claim 1, wherein a thin film is deposited.
Claim 5
Dependent Claim
20 words
A process according to claim 1, wherein X is --(CHR 5 ) n -- and n is 3 or 4.
Claim 6
Dependent Claim
28 words
A process according to claim 1, wherein X is --(CHR 5 ) n --, one R 5 group is alkyl, and the remaining R 5 groups are H.
Claim 7
Dependent Claim
38 words
A process according to claim 1, wherein X is --2--C 6 H 4 --CH 2 --, --2--C 6 H 10 --CH 2 --, --CH 2 --2--C 6 H 4 --, or --CH 2 --2--C 6 H 10 .
Claim 8
Dependent Claim
47 words
A process according to claim 1, wherein R 1 to R 4 are each independently straight-chain or branched alkyl containing 1-4 carbon atoms, partially or completely fluorinated straight-chain or branched alkyl containing 1-4 carbon atoms, propenyl, butenyl, pentenyl, hexenyl, heptenyl, allyl, cyclopentyl, cyclohexyl, cyclohexenyl, or unsubstituted phenyl.
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