Organometallic compounds

Claim 2

In a process for gas-phase deposition of a metal layer on a substrate, the improvement wherein a source of metal for the deposition process is an organometallic compound of the formula I ##STR5## wherein M is Al, In or Ga; X is --(CHR 5 ) n -- wherein n=2, 3, 4 or 5, -2-C 6 H 4 --(CH 2 ) m --, --(CH 2 ) m -2-C 6 H 4 --, -2-C 6 H 10 --(CH 2 ) m --, or --(CH 2 ) m -2-C 6 H 10 -- where m=1 or 2; R 5 is H or alkyl containing 1-4 carbon atoms; Y is --NR 3 R 4 or a 5- or 6-membered heterocyclic ring where the heteroatoms are N atoms; and R 1 , R 2 , R 3 and R 4 are each independently H, straight-chain or branched alkyl containing 1-8 carbon atoms, partially or completely fluorinated straight-chain or branched alkyl containing 1-8 carbon atoms, cycloalkyl, alkenyl or cyclo-alkenyl containing in each case 3-8 carbon atoms, or unsubstituted phenyl or substituted phenyl.

Claim 3

A process according to claim 1, wherein metal is deposited as an epitaxial layer.

Claim 4

A process according to claim 1, wherein metal is deposited as a thin film.

Claim 5

A process according to claim 1, wherein X is --(CHR 5 ) n -- and n is 3 or 4.

Claim 6

A process according to claim 1, wherein X is --(CHR 5 ) n --, one R 5 group is alkyl and the remaining R 5 groups are H.

Claim 7

A process according to claim 1, wherein X is -2-C 6 H 4 --CH 2 --, -2-C 6 H 10 --CH 2 --, --CH 2 -2-C 6 H 4 -- or --CH 2 -2-C 6 H 10 .

Claim 8

A process according to claim 1, wherein Y is --NR 3 R 4 or ##STR6## and R 6 is H or an alkyl radical containing 1-8 carbon atoms.

Claim 9

A process according to claim 1, wherein R 1 to R 4 are each independently straight-chain or branched alkyl containing 1-4 carbon atoms, partially or completely fluorinated straight-chained or branched alkyl containing 1-4 carbon atoms, propenyl, butenyl, pentenyl, hexenyl, heptenyl, allyl, cyclopentyl, cyclohexyl, cyclohexenyl, or unsubstituted phenyl.

Claim 10

A process according to claim 1, wherein said organometallic compound is (2-dimethylaminobenzyl)dimethylindium, (3-dimethylaminopropyl)dimethylaluminum, (3-diethylaminopropyl)dimethylaluminum (3-diethylaminopropyl)diisobutylaluminum (3-diisopropylaminopropyl)dihexylaluminum (4-N-methyl-N-isopropylaminobutyl)diethylaluminum, [3-(1-piperidyl)propyl]diethylaluminum, [2-(2-pyridyl)ethyl]dimethylaluminum, [3-(2-pyridyl)propyl]diisobutylaluminum, 2-dimethylaminobenzyl(dimethyl)gallium, 2-dimethylaminobenzyl(dimethyl)aluminum, 2-diethylaminobenzyl(dimethyl)indium, 2-dimethylaminobenzyl(diethyl)indium, 2-diethylaminobenzyl(diethyl)gallium, 2-diethylaminobenzyl(dimethyl)gallium, 2-dimethylaminophenylmethyl(dimethyl)gallium, 2-dimethylaminophenylmethyl(dimethyl)indium, 2-diethylaminophenylmethyl(dimethyl)gallium, 2-dimethylaminophenylmethyl(dimethyl)aluminum, 2-dimethylaminocyclohexylmethyl(dimethyl)gallium, 2-dipropylaminocyclohexylmethyl(dimethyl)aluminum, 2-dimethylaminomethylcyclohexyl(dimethyl)indium, (3-dimethylaminopropyl)dimethylgallium, (3-dimethylaminopropyl)dimethylindium, (3-diethylaminopropyl)dimethylgallium, (3-diethylaminopropyl)dimethylindium, (3-diethylaminopropyl)diethylindium, (4-diethylaminobutyl)dimethylgallium, (4-diisopropylaminobutyl)dimethylindium, [2-(2-pyridyl)ethyl]dimethylindium, (4-N-methyl-N-isopropylaminobutyl)diethylgallium, (4-dimethylaminobutyl)diisopropylgallium, (3-dipropylaminopropyl)diethylgallium, (3-N-propyl-N-isopropylaminopropyl)diisobutylindium, (4-dimethylaminobutyl)diethylindium, or (4-diethylaminobutyl)diethylgallium.

Claim 11

In a process for gas-phase deposition of a compound semiconductor on a substrate, the improvement wherein a source of metal for the deposition process is an organometallic compound of the formula I ##STR7## wherein M is Al, In, or Ga; X is --(CHR 5 ) n -- where n=2, 3, 4, or 5, --2--C 6 H 4 --(CH 2 ) m --, --(CH 2 ) m --2--C 6 H 4 --, --2--C 6 H 10 --(CH 2 ) m --, or --(CH 2 ) m --2--C 6 H 10 -- where m=1 or 2; R 5 is H or alkyl containing 1-4 carbon atoms; Y is --NR 3 R 4 or a 5- or 6-membered heterocyclic ring where the heteroatoms are N atoms; and R 1 , R 2 , R 3 , and R 4 are each independently H, straight-chain or branched alkyl containing 1-8 carbon atoms, partially or completely fluorinated straight-chain or branched alkyl containing 1-8 carbon atoms, cycloalkyl, alkenyl, or cyclo-alkenyl containing in each case 3-8 carbon atoms, or unsubstituted phenyl or substituted phenyl; wherein at least one additional compound of arsenic, antimonym, or phoshorous is supplied during deposition to produce a compound semiconductor.

Claim 12

In a process for gas-phase deposition of a compound semiconductor on a substrate, the improvement wherein a source of metal for the deposition process is an organometallic compound of the formula I ##STR7## wherein M is Al, In, or Ga; X is --(CHR 5 ) n -- where n=2, 3, 4, or 5, --2--C 6 H 4 --(CH 2 ) m --, --(CH 2 ) m --2--C 6 H 4 --, --2--C 6 H 10 --(CH 2 ) m --, or --(CH 2 ) m --2--C 6 H 10 -- where m=1 or 2; R 5 is H or alkyl containing 1-4 carbon atoms; Y is --NR 3 R 4 or a 5- or 6-membered heterocyclic ring where the heteroatoms are N atoms; and R 1 , R 2 , R 3 , and R 4 are each independently H, straight-chain or branched alkyl containing 1-8 carbon atoms, partially or completely fluorinated straight-chain or branched alkyl containing 1-8 carbon atoms, cycloalkyl, alkenyl, or cyclo-alkenyl containing in each case 3-8 carbon atoms, or unsubstituted phenyl or substituted phenyl; wherein at least one additional compound of arsenic, antimonym, or phoshorous is supplied during deposition to produce a compound semiconductor.