US4702791A
Expired / Lapsed
US
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Method for manufacturing bismuth-containing oxide single crystal
Assignee: KDDI Corp
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Filing: 1986-06-30
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Granted: 1987-10-27
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Expires: 2006-06-30
Abstract
Abstract A method is disclosed for manufacturing a bismuth-containing oxide single crystal, in which vapor of bismuth or alkylated bismuth and vapor of an organic compound of other metal ion components of a crystal are introduced into a heated reaction chamber to be reacted with oxygen gas, so that the desired bismuth-containing oxide single crystal is deposited on a substrate prepared in the reaction chamber. A Bi 12 SiO 20 single oxide crystal can be produced by the use of bismuth or alkylated bismuth and alkylated silicon or silicon alkoxide or by the use of bismuth or alkylated bismuth and alkylated germanium or germanium alkoxide. A (Y 1--x Bi x ) 3 Fe 5 O 12 single crystal can be poduced by the use of bismuth or alkylated bismuth yttrium alkoxide and carbonyl iron.
Inventors
- 👤 Yoshinori Mimura
- 👤 Yasuyuki Nagao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:39
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/407; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
86 words
A method for manufacturing a single crystal of an oxide containing bismuth and other metal, comprising introducing bismuth vapor or alkylated bismuth vapor and vapor of an organic compound of the other metal into a heated reaction chamber containing a substrate suitable for growing said single crystal of said oxide containing bismuth and other metal and reacting the bismuth or alkylated bismuth and organic compound of the other metal with oxygen, thereby depositing a single crystal of a bismuth-containing oxide of high purity on the substrate.
Claim 2
Independent Claim
86 words
A method for manufacturing a single crystal of an oxide containing bismuth and other metal, comprising introducing bismuth vapor or alkylated bismuth vapor and vapor of an organic compound of the other metal into a heated reaction chamber containing a substrate suitable for growing said single crystal of said oxide containing bismuth and other metal and reacting the bismuth or alkylated bismuth and organic compound of the other metal with oxygen, thereby depositing a single crystal of a bismuth-containing oxide of high purity on the substrate.
Claim 3
Dependent Claim
27 words
The method of manufacturing a single crystal of an oxide containing bismuth and other metal according to claim 5 in which the substrate is a single crystal.
Claim 4
Dependent Claim
35 words
The method of manufacturing a single crystal of an oxide containing bismuth and other metal according to claim 5 in which the substrate is a single crystal of said oxide containing bismuth and other metal.
Claim 5
Dependent Claim
55 words
The method of manufacturing a single crystal of an oxide containing bismuth and other metal according to claim 1, in which bismuth vapor or alkylated bismuth vapor and vapor of alkylated silicon or silicon alkoxide is reacted with oxygen and a single crystal of the formula Bi 12 SiO 20 is deposited on the substrate.
Claim 6
Dependent Claim
35 words
The method of manufacturing a single crystal of an oxide containing bismuth and other metal according to claim 4, in which the substrate is a single crystal of the formula Bi 12 SiO 20 .
Claim 7
Dependent Claim
57 words
The method of manufacturing a single crystal of an oxide containing bismuth and other metal according metal according to claim 1, in which bismuth vapor or alkylated bismuth vapor and vapor of alkylated germanium or germanium alkoxide is reacted with oxygen and a single crystal of the formula Bi 12 GeO 20 is deposited on the substrate.
Claim 8
Dependent Claim
55 words
The method of manufacturing a single crystal of an oxide containing bismuth and other metal according to claim 1, in which bismuth vapor or alkylated bismuth vapor of yttrium alkoxide and vapor of iron carbonyl are reacted with oxygen and a single crystal of oxide containing bismuth, yttrium and iron is deposited on the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-26 | 1991-04-27 | 1991-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-26 | 1995-04-27 | 1995-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-26 | 1999-04-27 | 1999-10-27 | $7700.00 | Window Closed / Lapsed |