Abstract A method of growing monocrystalline bismuth rare earth iron garnet, either as a single crystal or as an epitaxial layer, from a solution containing composing components of the garnet together with a flux. The flux consists essentially of a mixture of Bi 2 O 3 and RO 2 , wherein R is at least one of the elements Si, Ge, Ti, Sn, Zr, Ce and Te, wherein the system Bi 2 O 3 --RO 2 includes a eutectic composition having a eutectic temperature which is below the melting temperature of pure Bi 2 O 3 . By using these Bi 2 O 3 --RO 2 fluxes, the monocrystalline garnets produced have lower optical absorption coefficients at, for example 5100 A and 5600 A than similar garnets grown using lead-containing fluxes. Furthermore higher growth rates and higher growth temperatures are possible when using the Bi 2 O 3 --RO 2 fluxes rather than lead-containing fluxes.
In the method of growing a monocrystalline bismuth rare earth iron garnet from a melt consisting of a solution containing the constituents of the garnet by crystallization from said melt, the improvement wherein the solution in addition to said constituents contains a flux consisting essentially of a mixture of Bi 2 O 3 and RO 2 wherein R is at least one element selected from the group consisting of Si, Ge, Ti, Sn, Zr, Ce and Te the proportion of Bi 2 O 3 and RO 2 being such as to form a eutectic composition the eutectic temperature of which is below the melting temperature of pure Bi 2 O 3 and the proportion of Bi 2 O 3 in the solution being in excess of that required as a constituent of the garnet.
Claim 2
Dependent Claim
134 words
In the method of growing a monocrystalline bismuth rare earth iron garnet from a melt consisting of a solution containing the constituents of the garnet by crystallization from said melt, the improvement wherein the solution in addition to said constituents contains a flux consisting essentially of a mixture of Bi 2 O 3 and RO 2 wherein R is at least one element selected from the group consisting of Si, Ge, Ti, Sn, Zr, Ce and Te the proportion of Bi 2 O 3 and RO 2 being such as to form a eutectic composition the eutectic temperature of which is below the melting temperature of pure Bi 2 O 3 and the proportion of Bi 2 O 3 in the solution being in excess of that required as a constituent of the garnet.
Claim 3
Dependent Claim
30 words
A method of claim 1, wherein a monocrystalline bismuth rare earth iron garnet epitaxial layer is grown by crystallization from the melt on a crystal face of a monocrystalline substrate.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, wherein the growth temperature is between 720° and 900° C.
Claim 5
Dependent Claim
24 words
A method as claimed in claim 3, wherein the viscosity of the flux mixture at the growth temperature is not more than 16 centipoises.
Claim 6
Dependent Claim
27 words
The method of claim 4 wherein a monocrystalline epitaxial layer of a bismuth rare earth iron garnet is grown on a crystal face of a mono-crystalline substrate.