Patent US2149803A successfully refreshed from Google Patents.
US4792467A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for vapor phase deposition of gallium nitride film
Assignee: ATK Launch Systems LLC
•
Filing: 1987-08-17
•
Granted: 1988-12-20
•
Expires: 2007-08-17
Abstract
Abstract A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula: H.sub.3 GaNR.sub.3 Each R is independently selected from alkyl groups having from 1 to about 4 carbon atoms. The source compound is conveyed into a deposition chamber containing a substrate. The source compound, maintained in the gaseous phase, decomposes in the deposition chamber and optionally reacts with other materals in the deposition chamber. Gallium nitride is deposited on the substrate as a result.
Inventors
- 👤 Andreas A. Melas
- 👤 Norbert Braunagel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:08
CPC Classifications
B; B05; B05D; B05D5/00; B05D7/00; B05D7/14; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C23C16/303
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
86 words
A method for depositing a gallium nitride film on a substrate, comprising the steps of: A. selecting as a source compound an adduct of the formula: H.sub.3 GaNR.sub.3 wherein each R is independently selected from alkyl having from 1 to about 4 carbon atoms; B. conveying said source compound to a deposition chamber containing said substrate; C. maintaining said source compound in the gaseous phase in said deposition chamber; and D. decomposing said source compound in said deposition chamber, thereby depositing gallium nitride on said substrate.
Claim 2
Independent Claim
86 words
A method for depositing a gallium nitride film on a substrate, comprising the steps of: A. selecting as a source compound an adduct of the formula: H.sub.3 GaNR.sub.3 wherein each R is independently selected from alkyl having from 1 to about 4 carbon atoms; B. conveying said source compound to a deposition chamber containing said substrate; C. maintaining said source compound in the gaseous phase in said deposition chamber; and D. decomposing said source compound in said deposition chamber, thereby depositing gallium nitride on said substrate.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein said conveying step is carried out by entraining said source compound on a stream of a carrier gas comprising nitrogen.
Claim 4
Dependent Claim
12 words
The method of claim 2, wherein said carrier gas further comprises hydrogen.
Claim 5
Dependent Claim
19 words
The method of claim 3, wherein said carrier gas consists essentially of about 90% nitrogen and about 10% hydrogen.
Claim 6
Dependent Claim
23 words
The method of claim 1, wherein said deposition chamber is maintained at a temperature of from about 300° C. to about 1000° C.
Claim 7
Dependent Claim
17 words
The method of claim 1, wherein said substrate is selected from silicon, gallium arsenide, and indium phosphide.
Claim 8
Independent Claim
120 words
A method for depositing a gallium-Group V film on a substrate, comprising the steps of: A. selecting as a gallium source compound an adduct of the formula: H.sub.3 GaNR.sub.3 wherein each R is independently selected from alkyl having from 1 to about 4 carbon atoms; B. selecting a Group V source compound; C. conveying said gallium source compound and said Group V source compound to a deposition chamber containing said substrate; D. maintaining said gallium source compound and said Group V source compound in the gaseous phase in said deposition chamber; and E. decomposing and reacting said gallium source compound and said Group V source compound in said deposition chamber, thereby depositing a gallium-Group V compound film on said substrate.
Claim 9
Independent Claim
120 words
A method for depositing a gallium-Group V film on a substrate, comprising the steps of: A. selecting as a gallium source compound an adduct of the formula: H.sub.3 GaNR.sub.3 wherein each R is independently selected from alkyl having from 1 to about 4 carbon atoms; B. selecting a Group V source compound; C. conveying said gallium source compound and said Group V source compound to a deposition chamber containing said substrate; D. maintaining said gallium source compound and said Group V source compound in the gaseous phase in said deposition chamber; and E. decomposing and reacting said gallium source compound and said Group V source compound in said deposition chamber, thereby depositing a gallium-Group V compound film on said substrate.
Claim 10
Dependent Claim
23 words
The method of claim 7, wherein said Group V source compound is phosphine and said gallium - Group V film is gallium phosphide.
Claim 11
Dependent Claim
23 words
The method of claim 7, wherein said Group V source compound is arsine and said gallium - Group V film is gallium arsenide.
References Cited (Backward Citations)
US3224913A
Cited
US3224911A
Cited
US3406048A
Cited
US3635771A
Cited
US3663320A
Cited
FR2356271A1
Cited
US4250205A
Cited
US4204893A
Cited
US4279670A
Cited
US4436769A
Cited
US4645689A
Cited
EP0174743A2
Cited
WO1986002776A1
Cited
WO1986003228A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-20 | 1992-06-20 | 1992-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-20 | 1996-06-20 | 1996-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-20 | 2000-06-20 | 2000-12-20 | $7700.00 | Window Closed / Lapsed |