Abstract A gallium arsenide crystal is produced by introducing a mixture of gallium hydride and arsenic chloride and/or arsenic hydride into the region surrounding a gallium arsenide crystal substrate heated to a temperature above the pyrolitic disintegration temperature of the mixture, whereby pyrolitic disintegration of the mixture takes place and a gallium arsenide crystal is grown epitaxially on the substrate. The gallium and arsenic compounds may be in the gaseous or liquid form. Hydrogen may be included in the mixture. A GaAs wafer 4, placed on graphite block 2 coated with thin quartz layer 3 situated inside quartz reaction chamber 1, is heated to 600 DEG C. by induction windings 5. A gas mixture comprising H2, Ga2H6, AsCl3 or H2, Ga2H6, AsH3 at 20 DEG C. is passed over the GaAs wafer through 6 and 7. Effluent gas mixture flows out through 8, and may be directed into an additional reaction chamber. By including suitable doping material in the gas mixture, PN junction may be produced on a seed doped with P-type impurities. The growth of the epitaxial layer may be limited to certain areas determined by a thermal mask.
METHOD OF PRODUCING EPITAXIALLY A LAYER OF GALLIUM ARESENIDE OF ON A DOPED SEED IN A REACTION CHAMBER COMPRISING THE STEPS OF: INTRODUCING AN ATMOSPHERE CONTAINING AT LEAST HYDROGEN AND GA2H6+ASCL3+ASH3 VAPORS, AT A TEMPERATURE BELOW THE PYROLYTIC DISINTEGRATION TEMPERATURE OF SAID VAPORS; PROPORTIONING THE RELATIVE AMOUNTS OF ASH3 TO ASCL3 IN SAID ATMOSPHERE SO THAT A PREDETERMINED SHARPNESS IS OBTAINED IN THE TRANSITION OF THE DOPING LEVELS BETWEEN SAID SEED AND SAID LAYER, THE SHARPNESS OF SAID TRANSITION INCREASING AS THE PROPORTION OF ASH3 TO ASCL3 INCREASES; AND SELECTIVELY HEATING SAID SEED TO A TEMPERATURE HIGHER THAN SAID PYROLYTIC DISINTEGRATION TEMPERATURE WHEREBY A LAYER OF GALLIUM ARSENIDE IS DEPOSITED ON SAID SEED.
Claim 2
Dependent Claim
113 words
METHOD OF PRODUCING EPITAXIALLY A LAYER OF GALLIUM ARESENIDE OF ON A DOPED SEED IN A REACTION CHAMBER COMPRISING THE STEPS OF: INTRODUCING AN ATMOSPHERE CONTAINING AT LEAST HYDROGEN AND GA2H6+ASCL3+ASH3 VAPORS, AT A TEMPERATURE BELOW THE PYROLYTIC DISINTEGRATION TEMPERATURE OF SAID VAPORS; PROPORTIONING THE RELATIVE AMOUNTS OF ASH3 TO ASCL3 IN SAID ATMOSPHERE SO THAT A PREDETERMINED SHARPNESS IS OBTAINED IN THE TRANSITION OF THE DOPING LEVELS BETWEEN SAID SEED AND SAID LAYER, THE SHARPNESS OF SAID TRANSITION INCREASING AS THE PROPORTION OF ASH3 TO ASCL3 INCREASES; AND SELECTIVELY HEATING SAID SEED TO A TEMPERATURE HIGHER THAN SAID PYROLYTIC DISINTEGRATION TEMPERATURE WHEREBY A LAYER OF GALLIUM ARSENIDE IS DEPOSITED ON SAID SEED.