Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organometallic precursor compounds

Claim 2

A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organometallic precursor, the method comprising the following steps: positioning the wafer within a chemical vapor deposition reactor; injecting an organometallic precursor and a carrier gas to within the reactor having the wafer positioned therein; maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a layer of material onto the wafer which incorporates metal and carbon from the organometallic precursor; after depositing the layer of material, ion implanting a late transition metal into the layer to a selected dose; and after ion implanting, annealing the layer in the presence of a hydrogen source gas which effectively diffuses into the layer, hydrogen of the hydrogen source gas being catalyzed by the late transition metal within the layer into hydrogen atoms or radicals, the hydrogen atoms or radicals reacting with carbon in the layer to produce gaseous products which diffuse outwardly of the wafer and are expelled from the reactor.

Claim 3

The chemical vapor deposition method of claim 1 wherein the ion implantation provides an implant density of from 1×10 18 to 1×10 21 atoms/cm 3 .

Claim 4

The chemical vapor deposition method of claim 1 wherein the organometallic precursor is a titanium organometallic precursor, and further comprising feeding a gaseous nitrogen source to the reactor during the deposition, the deposited layer predominantly comprising TiN.

Claim 5

The chemical vapor deposition method of claim 1 wherein the hydrogen source gas is selected from the group consisting of H 2 , SiH 4 , B 2 H 6 , BH 3 , NH 3 , and H 2 S.

Claim 6

The chemical vapor deposition method of claim 1 wherein the hydrogen source gas comprises H 2 .

Claim 7

The chemical vapor deposition method of claim 1 wherein the organometallic precursor is a titanium organometallic precursor, and further comprising feeding a gaseous nitrogen source to the reactor during the deposition, the deposited layer predominantly comprising TiN, and wherein the late transition metal comprises platinum.

Claim 8

The chemical vapor deposition method of claim 1 wherein the ion implantation provides and implant density of from 1×10 18 to 1×10 21 atoms/cm 3 , and wherein the organometallic precursor is a titanium organometallic precursor, and further comprising feeding a gaseous nitrogen source to the reactor during the deposition, the deposited layer predominantly comprising TiN.

Claim 9

The chemical vapor deposition method of claim 1 wherein the late transition metal comprises platinum, and wherein the hydrogen source gas comprises H 2 .

Claim 10

A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organometallic precursor, the method comprising the following steps: positioning the wafer within a chemical vapor deposition reactor; injecting an organometallic precursor and a carrier gas to within the reactor having the wafer positioned therein; maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer of first material onto the wafer which incorporates metal and carbon from the organometallic precursor; after depositing the first layer, depositing a discrete second layer of second material onto the wafer, the second layer comprising a late transition metal; and after depositing the discrete second layer, annealing the wafer in the presence of a hydrogen source gas which effectively diffuses into the first and second layers, hydrogen of the hydrogen source gas being catalyzed by the late transition metal within the second layer to form hydrogen atoms or radicals, the hydrogen atoms or radicals diffusing into the first layer and reacting with carbon in the first layer to produce gaseous products which diffuse outwardly of the wafer and are expelled from the reactor.

Claim 11

A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organometallic precursor, the method comprising the following steps: positioning the wafer within a chemical vapor deposition reactor; injecting an organometallic precursor and a carrier gas to within the reactor having the wafer positioned therein; maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer of first material onto the wafer which incorporates metal and carbon from the organometallic precursor; after depositing the first layer, depositing a discrete second layer of second material onto the wafer, the second layer comprising a late transition metal; and after depositing the discrete second layer, annealing the wafer in the presence of a hydrogen source gas which effectively diffuses into the first and second layers, hydrogen of the hydrogen source gas being catalyzed by the late transition metal within the second layer to form hydrogen atoms or radicals, the hydrogen atoms or radicals diffusing into the first layer and reacting with carbon in the first layer to produce gaseous products which diffuse outwardly of the wafer and are expelled from the reactor.

Claim 12

The chemical vapor deposition method of claim 9 wherein the second material of the second layer comprises a late transition metal in elemental form.

Claim 13

The chemical vapor deposition method of claim 9 wherein the second material of the second layer comprises a late transition metal in alloy form.

Claim 14

The chemical vapor deposition method of claim 9 wherein the second layer of second material is deposited by sputtering to provide the second material in the form of elemental or alloyed late transition metal.

Claim 15

The chemical vapor deposition method of claim 9 wherein the hydrogen source gas is selected from the group consisting of H 2 , SiH 4 , B 2 H 6 , BH 3 , NH 3 , and H 2 S.

Claim 16

The chemical vapor deposition method of claim 9 wherein the hydrogen source gas comprises H 2 .

Claim 17

A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organometallic precursor, the method comprising the following steps: positioning the wafer within a chemical vapor deposition reactor; injecting an organometallic precursor and a carrier gas to within the reactor having the wafer positioned therein; maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer of first material onto the wafer which incorporates metal and carbon from the organometallic precursor; depositing a second layer of second material onto the wafer, the second layer comprising a late transition metal; alternatingly discrete depositing a plurality of first layers and a plurality of second layers atop one another; and after the alternatingly discrete depositions, annealing the wafer in the presence of a hydrogen source gas which effectively diffuses into the alternating first and second layers, hydrogen of the hydrogen source gas being catalyzed by the late transition metal within the second layers into hydrogen atoms or radicals, the hydrogen atoms or radicals diffusing into the first layers and reacting with carbon in the first layers to produce gaseous products which diffuse outwardly of the wafer and are expelled from the reactor.

Claim 18

A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organometallic precursor, the method comprising the following steps: positioning the wafer within a chemical vapor deposition reactor; injecting an organometallic precursor and a carrier gas to within the reactor having the wafer positioned therein; maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer of first material onto the wafer which incorporates metal and carbon from the organometallic precursor; depositing a second layer of second material onto the wafer, the second layer comprising a late transition metal; alternatingly discrete depositing a plurality of first layers and a plurality of second layers atop one another; and after the alternatingly discrete depositions, annealing the wafer in the presence of a hydrogen source gas which effectively diffuses into the alternating first and second layers, hydrogen of the hydrogen source gas being catalyzed by the late transition metal within the second layers into hydrogen atoms or radicals, the hydrogen atoms or radicals diffusing into the first layers and reacting with carbon in the first layers to produce gaseous products which diffuse outwardly of the wafer and are expelled from the reactor.

Claim 19

The chemical vapor deposition method of claim 15 wherein the first layer is deposited to a thickness which is greater than that of the second layer.

Claim 20

The chemical vapor deposition method of claim 15 wherein the first layer is deposited to a thickness which is greater than that of the second layer, a finished composite of the deposited layers after the annealing step substantially comprising the first material.

Claim 21

The chemical vapor deposition method of claim 15 wherein the second material of the second layers comprises a late transition metal in elemental form.

Claim 22

The chemical vapor deposition method of claim 15 wherein the second material of the second layers comprises a late transition metal in alloy form.

Claim 23

The chemical vapor deposition method of claim 15 wherein the second layer is deposited to a thickness of from 2 Angstroms to 200 Angstroms.

Claim 24

The chemical vapor deposition method of claim 15 wherein the second layer is deposited to a thickness of from 2 Angstroms to 200 Angstroms, the first layer thickness being greater than that of the second layer, a finished composite of the deposited layers after the annealing step substantially comprising the first material.

Claim 25

The chemical vapor deposition method of claim 15 wherein the plurality of the second layers of second material are respectively deposited by, providing a gaseous form of a late transition metal within the reactor having the wafer positioned therein; maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a second layer of second material onto the wafer which incorporates the late transition metal.

Claim 26

The chemical vapor deposition method of claim 15 wherein the plurality of the second layers of second material are respectively deposited by sputtering to provide the second material in the form of elemental or alloyed late transition metal.

Claim 27

The chemical vapor deposition method of claim 15 wherein the hydrogen source gas is selected from the group consisting of H 2 , SiH 4 , B 2 H 6 , BH 3 , NH 3 , and H 2 S.

Claim 28

The chemical vapor deposition method of claim 15 wherein the hydrogen source gas comprises H 2 .

Claim 29

The chemical vapor deposition method of claim 15 wherein the hydrogen source gas comprises H 2 , and the second material of the second layers comprises a late transition metal in elemental form.

Claim 30

The chemical vapor deposition method of claim 15 wherein the hydrogen source gas comprises H 2 , and the second material of the second layers comprises a late transition metal in alloy form.

Claim 31

The chemical vapor deposition method of claim 15 wherein the organometallic precursor is a titanium organometallic precursor and the first material is titanium containing, and wherein the late transition metal comprises titanium.