Methods of forming metal nitride and silicide structures

Claim 1

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having an upper surface; forming a gate stack upon said semiconductor substrate; providing a chemical vapor deposition (CVD) comprising a metal halide, nitrogen, and hydrogen to form: a metal silicide layer within said upper surface by a reaction between said upper surface and said metal of said metal halide; and a metal nitride layer upon said metal silicide layer by a reaction between said metal halide and said nitrogen forming a metallization layer upon said metal nitride layer; patterning said metallization layer and said metal nitride layer to form a recess therein on opposite sides of said gate stack; filling said recess with a dielectric material to isolate gate stack.

Claim 2

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having an upper surface; forming a gate stack upon said semiconductor substrate; providing a chemical vapor deposition (CVD) comprising a metal halide, nitrogen, and hydrogen to form: a metal silicide layer within said upper surface by a reaction between said upper surface and said metal of said metal halide; and a metal nitride layer upon said metal silicide layer by a reaction between said metal halide and said nitrogen forming a metallization layer upon said metal nitride layer; patterning said metallization layer and said metal nitride layer to form a recess therein on opposite sides of said gate stack; filling said recess with a dielectric material to isolate gate stack.

Claim 24

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having an junction therein; forming a gate stack upon said semiconductor substrate and adjacent to said junction; providing a chemical vapor deposition (CVD) at a temperature range from about 300° C. to about 800° C. and comprising a metal halide, a nitrogen gas, and a hydrogen gas, wherein: said halide of said metal halide is selected from the group consisting of F, Cl, Br, and I; and a reaction between said junction and said metal of said metal halide forms a metal silicide layer within said junction; and a reaction between said metal halide and said nitrogen gas forms a metal nitride layer upon said metal silicide layer; forming a metallization layer upon said metal nitride layer; patterning said metallization layer and said metal nitride layer to form a recess therein; and filling said recess with a dielectric material.

Claim 25

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having an junction therein; forming a gate stack upon said semiconductor substrate and adjacent to said junction; providing a chemical vapor deposition (CVD) at a temperature range from about 300° C. to about 800° C. and comprising a metal halide, a nitrogen gas, and a hydrogen gas, wherein: said halide of said metal halide is selected from the group consisting of F, Cl, Br, and I; and a reaction between said junction and said metal of said metal halide forms a metal silicide layer within said junction; and a reaction between said metal halide and said nitrogen gas forms a metal nitride layer upon said metal silicide layer; forming a metallization layer upon said metal nitride layer; patterning said metallization layer and said metal nitride layer to form a recess therein; and filling said recess with a dielectric material.

Claim 33

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having an junction therein; forming a gate stack upon said semiconductor substrate and adjacent to said junction; providing a plasma enhanced chemical vapor deposition in a temperature range from about 300° C. to about 800° C. and comprising a metal halide, a nitrogen gas, and a hydrogen gas, wherein: said metal of said metal halide is selected from the group consisting of Ti, Ni, and W; said halide of said metal halide is selected from the group consisting of F, Cl, Br, and I; and a reaction between said junction and said metal of said metal halide forms a metal silicide layer within said junction; and a reaction between said metal halide and said nitrogen gas forms a metal nitride layer upon said metal silicide layer; forming a metallization layer upon said metal nitride layer; patterning said metallization layer and said metal nitride layer to form a recess therein; and filling said recess with a dielectric material.

Claim 34

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having an junction therein; forming a gate stack upon said semiconductor substrate and adjacent to said junction; providing a plasma enhanced chemical vapor deposition in a temperature range from about 300° C. to about 800° C. and comprising a metal halide, a nitrogen gas, and a hydrogen gas, wherein: said metal of said metal halide is selected from the group consisting of Ti, Ni, and W; said halide of said metal halide is selected from the group consisting of F, Cl, Br, and I; and a reaction between said junction and said metal of said metal halide forms a metal silicide layer within said junction; and a reaction between said metal halide and said nitrogen gas forms a metal nitride layer upon said metal silicide layer; forming a metallization layer upon said metal nitride layer; patterning said metallization layer and said metal nitride layer to form a recess therein; and filling said recess with a dielectric material.

Claim 35

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having a first exposed silicon surface, and having a feature projecting from said semiconductor substrate adjacent to said first exposed silicon surface, said feature having thereon a second exposed silicon surface; and performing a PECVD in a temperature range from about 500° C. to about 600° C. and comprising TiCl 4 , N 2 , H 2 , and a carrier gas to form: a TiSi x film within said first exposed silicon surface and upon said second exposed silicon surface; and a TiN film upon and between said first and second exposed silicon surfaces; forming a metallization film upon the TiN film; and etching through the metallization film and the TiN film to expose; the first exposed silicon surface; and the second exposed silicon surface; forming a dielectric material upon the first and second exposed silicon surfaces.

Claim 36

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having a first exposed silicon surface, and having a feature projecting from said semiconductor substrate adjacent to said first exposed silicon surface, said feature having thereon a second exposed silicon surface; and performing a PECVD in a temperature range from about 500° C. to about 600° C. and comprising TiCl 4 , N 2 , H 2 , and a carrier gas to form: a TiSi x film within said first exposed silicon surface and upon said second exposed silicon surface; and a TiN film upon and between said first and second exposed silicon surfaces; forming a metallization film upon the TiN film; and etching through the metallization film and the TiN film to expose; the first exposed silicon surface; and the second exposed silicon surface; forming a dielectric material upon the first and second exposed silicon surfaces.

Claim 48

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having a first exposed silicon surface; forming adjacent to said exposed first silicon surface: a gate stack having a second exposed silicon surface thereon; a spacer upon the gate stack between the first and second exposed silicon surfaces; and a field oxide region; forming a junction within said exposed first silicon surface; forming: a TiSi x film within said first and second exposed silicon surfaces; and a TiN film upon: the field oxide region; the spacer; and the first and second exposed silicon surfaces; forming a metallization film upon the TiN film; forming a recess through the metallization film and the TiN film to expose: the field oxide region; the first exposed silicon surface; and the second exposed silicon surface; forming a dielectric material upon: the field oxide region; the first exposed silicon surface; and the second exposed silicon surface.

Claim 49

A method of forming a semiconductor structure comprising: providing a semiconductive substrate having a first exposed silicon surface; forming adjacent to said exposed first silicon surface: a gate stack having a second exposed silicon surface thereon; a spacer upon the gate stack between the first and second exposed silicon surfaces; and a field oxide region; forming a junction within said exposed first silicon surface; forming: a TiSi x film within said first and second exposed silicon surfaces; and a TiN film upon: the field oxide region; the spacer; and the first and second exposed silicon surfaces; forming a metallization film upon the TiN film; forming a recess through the metallization film and the TiN film to expose: the field oxide region; the first exposed silicon surface; and the second exposed silicon surface; forming a dielectric material upon: the field oxide region; the first exposed silicon surface; and the second exposed silicon surface.

Claim 50

A method of forming a semiconductor structure comprising: forming a semiconductive substrate having an electrically active region therein; forming a field oxide region in the semiconductive substrate that is adjacent to the electrically active region; forming a raised structure projecting from said semiconductive substrate adjacent to said electrically active region; forming a metal silicide upon said electrically active region and upon the raised structure; forming a metal nitride layer extending continuously from the field oxide, upon the metal silicide on the electrically active region, to make contact with the metal silicide upon the raised structure; forming a metallization material extending continuously upon said metal nitride layer over the field oxide region, the electrically active region, and the raised structure; forming a first dielectric material projecting from the field oxide region in contact with the metal nitride layer and the metalization material; and forming a second dielectric material projecting from the metal silicide upon the raised structure and being in contact with the metal nitride layer upon the raised structure, and being in contact with the metalization material.

Claim 51

A method of forming a semiconductor structure comprising: forming a semiconductive substrate having an electrically active region therein; forming a field oxide region in the semiconductive substrate that is adjacent to the electrically active region; forming a raised structure projecting from said semiconductive substrate adjacent to said electrically active region; forming a metal silicide upon said electrically active region and upon the raised structure; forming a metal nitride layer extending continuously from the field oxide, upon the metal silicide on the electrically active region, to make contact with the metal silicide upon the raised structure; forming a metallization material extending continuously upon said metal nitride layer over the field oxide region, the electrically active region, and the raised structure; forming a first dielectric material projecting from the field oxide region in contact with the metal nitride layer and the metalization material; and forming a second dielectric material projecting from the metal silicide upon the raised structure and being in contact with the metal nitride layer upon the raised structure, and being in contact with the metalization material.