US5693377A
Expired / Lapsed
US
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Method of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compounds
Assignee: Micron Technology Inc
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Filing: 1996-01-08
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Granted: 1997-12-02
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Expires: 2016-01-08
Abstract
Abstract A chemical vapor deposition method of providing a layer of material atop a semiconductor substrate using an organometallic or metal-organic precursor in a manner which minimizes carbon incorporation in the layer includes, a) positioning a substrate within a chemical vapor deposition reactor; b) providing a gaseous precursor within the reactor having the substrate positioned therein, the precursor comprising one or a combination of tetrakisdimethylamidotitanium, cyclopentadienylcycloheptatrienyltitanium (CpTiCht), bis(2,4-dimethyl-1,3-pentadienyl)titanium (BDPT), and biscyclopentadienyltitanium diazide (Cp 2 Ti(N 3 ) 2 ); c) exposing the gaseous precursor to high intensity light within the reactor effective to dissociate titanium from the precursor; and d) exposing the substrate to the light exposed gaseous precursor to cause a layer comprising titanium of the precursor to be deposited thereon, the deposited layer having reduced carbon incorporation over what would otherwise be provided under the same deposition conditions but without high intensity light exposure.
Inventors
- 👤 Donald L. Westmoreland
- 👤 Brenda D. Wanner
- 👤 David R. Atwell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:34
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/06; C23C16/18; C23C16/34; C23C16/44; C23C16/48; C23C16/482
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
98 words
A chemical vapor deposition method of providing a titanium-comprising layer atop a semiconductor substrate using a tetrakisdimethylamidotitanium precursor comprising the following steps: positioning a semiconductor substrate within a chemical vapor deposition reactor; providing a gaseous tetrakisdimethylamidotitanium precursor within the reactor having the semiconductor substrate positioned therein; exposing the gaseous tetrakisdimethylamidotitanium precursor to light having an intensity of at least 100 mW/cm 2 within the reactor to dissociate titanium from the tetrakisdimethylamidotitanium precursor; and exposing the semiconductor substrate to the light exposed gaseous tetrakisdimethylamidotitanium precursor to cause a layer comprising titanium of the tetrakisdimethylamidotitanium precursor to be deposited thereon.
Claim 2
Dependent Claim
98 words
A chemical vapor deposition method of providing a titanium-comprising layer atop a semiconductor substrate using a tetrakisdimethylamidotitanium precursor comprising the following steps: positioning a semiconductor substrate within a chemical vapor deposition reactor; providing a gaseous tetrakisdimethylamidotitanium precursor within the reactor having the semiconductor substrate positioned therein; exposing the gaseous tetrakisdimethylamidotitanium precursor to light having an intensity of at least 100 mW/cm 2 within the reactor to dissociate titanium from the tetrakisdimethylamidotitanium precursor; and exposing the semiconductor substrate to the light exposed gaseous tetrakisdimethylamidotitanium precursor to cause a layer comprising titanium of the tetrakisdimethylamidotitanium precursor to be deposited thereon.
Claim 3
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein the light comprises a wavelength of from about 100 nm to about 800 nm.
Claim 4
Dependent Claim
29 words
The chemical vapor deposition method of claim 1 wherein pressure in the reactor during deposition of the layer comprising titanium is from about 100 mTorr to about 20 Torr.
Claim 5
Dependent Claim
44 words
The chemical vapor deposition method of claim 1 further comprising providing a reactive gas into the reactor with the substrate positioned therein, the reactive gas combining with the titanium of the light exposed tetrakisdimethylamidotitanium presursor to deposit a titanium compound layer on the substrate.
Claim 6
Dependent Claim
41 words
The chemical vapor deposition method of claim 1 further comprising providing hydrazine into the reactor with the substrate positioned therein, the hydrazine combining with the titanium of the light exposed tetrakisdimethylamidotitanium precursor to deposit a titanium nitride layer on the substrate.
Claim 7
Dependent Claim
45 words
The chemical vapor deposition method of claim 1 further comprising providing 1,1 unsymmetrical; dimethylhydrazine into the reactor with the substrate positioned therein, the 1,1 unsymmetrical dimethylhydrazine combining with the titanium of the light exposed tetrakisdimethylamidotitanium precursor to deposit a titanium nitride layer on the substrate.
Claim 8
Dependent Claim
112 words
A chemical vapor deposition method of providing a titanium-comprising layer atop a semiconductor substrate using a biscyclopentadienyltitanium diazide precursor comprising the following steps: positioning a semiconductor substrate within a chemical vapor deposition reactor; providing a gaseous biscyclopentadienyltitanium diazide precursor within the reactor having the semiconductor substrate positioned therein; exposing the gaseous biscyclopentadienyltitanium diazide precursor to light having an intensity of at least 100 mW/cm 2 within the reactor to dissociate titanium from the biscyclopentadienyltitanium diazide precursor; and providing a reactive gas into the reactor with the substrate positioned therein, the reactive gas combining with the titanium of the light exposed biscyclopentadienyltitanium diazide precursor to deposit a titanium compound layer on the substrate.
Claim 9
Dependent Claim
112 words
A chemical vapor deposition method of providing a titanium-comprising layer atop a semiconductor substrate using a biscyclopentadienyltitanium diazide precursor comprising the following steps: positioning a semiconductor substrate within a chemical vapor deposition reactor; providing a gaseous biscyclopentadienyltitanium diazide precursor within the reactor having the semiconductor substrate positioned therein; exposing the gaseous biscyclopentadienyltitanium diazide precursor to light having an intensity of at least 100 mW/cm 2 within the reactor to dissociate titanium from the biscyclopentadienyltitanium diazide precursor; and providing a reactive gas into the reactor with the substrate positioned therein, the reactive gas combining with the titanium of the light exposed biscyclopentadienyltitanium diazide precursor to deposit a titanium compound layer on the substrate.
Claim 10
Dependent Claim
24 words
The chemical vapor deposition method of claim 7 wherein the light is provided at a wavelength from about 100 nm to about 800 nm.
Claim 11
Dependent Claim
29 words
The chemical vapor deposition method of claim 7 wherein pressure in the reactor during deposition of the titanium compound layer is from about 100 mTorr to about 20 Torr.
Claim 12
Dependent Claim
24 words
The chemical vapor deposition method of claim 7 wherein the reactive gas comprises hydrazine and wherein the deposited titanium compound layer comprises titanium nitride.
Claim 13
Dependent Claim
26 words
The chemical vapor deposition method of claim 7 wherein the reactive gas comprises 1,1 unsymmetrical dimethylhydrazine and wherein the deposited titanium compound layer comprises titanium nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-01 | 2001-06-02 | 2001-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-01 | 2005-06-02 | 2005-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-01 | 2009-06-02 | 2009-12-02 | $7700.00 | Window Closed / Lapsed |