US5300321A
Expired / Lapsed
US
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Process for depositing titanium nitride film by CVD
Assignee: Kawasaki Microelectronics Inc
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Filing: 1993-05-04
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Granted: 1994-04-05
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Expires: 2013-05-04
Abstract
Abstract A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula: A.sub.n B.sub.m Ti wherein n and m are independently selected from integers of from 1 to 3 provided that sum of n and m is equal to or smaller than 4; A is selected from a cyclic hydrocarbon group and a nitrogen-containing heterocyclic group which is bonded to the titanium by π electron; and B is an alkylamine derivative group containing a nitrogen atom which is directly bonded to the titanium. The film deposition process of the invention is highly useful in LSI fabrication.
Inventors
- 👤 Tadashi Nakano
- 👤 Tomohiro Ohta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:01
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
106 words
A process for depositing a titanium nitride film comprising subjecting a substrate to chemical vapor deposition using a gas source comprising a compound of the general formula: A.sub.n B.sub.m Ti wherein n and m are independently selected from integers of from 1 to 3, inclusive, provided that sum of n and m is equal to or smaller than 4; A is a cyclic hydrocarbon group which is bonded to the titanium by π electron and selected from the group consisting of cyclopentadienyl, alkylcyclopentadienyl, cycloheptatrienyl, cyclooctatetraenyl, and azulenyl groups; and B is an alkylamine derivative group containing one nitrogen atom which is directly bonded to the titanium.
Claim 2
Dependent Claim
106 words
A process for depositing a titanium nitride film comprising subjecting a substrate to chemical vapor deposition using a gas source comprising a compound of the general formula: A.sub.n B.sub.m Ti wherein n and m are independently selected from integers of from 1 to 3, inclusive, provided that sum of n and m is equal to or smaller than 4; A is a cyclic hydrocarbon group which is bonded to the titanium by π electron and selected from the group consisting of cyclopentadienyl, alkylcyclopentadienyl, cycloheptatrienyl, cyclooctatetraenyl, and azulenyl groups; and B is an alkylamine derivative group containing one nitrogen atom which is directly bonded to the titanium.
Claim 3
Dependent Claim
19 words
The process according to claim 1 wherein B is selected from the group consisting of dimethylamino and diethylamino groups.
Claim 4
Dependent Claim
109 words
A process for depositing a titanium nitride film by comprising subjecting a substrate to chemical vapor deposition using a gas source comprising a compound of the general formula: A.sub.n B.sub.m Ti wherein n and m are independently selected from integers of from 1 to 3, inclusive, provided that sum of n and m is equal to or smaller than 4; A is a cyclic hydrocarbon group or a nitrogen-containing heterocyclic group which is bonded to the titanium by π electron and selected from the group consisting of cyclopentadienyl, cycloheptatrienyl, pyrrolyl and methylpyrrolyl groups; and B is a member selected from the group consisting of sym-dimethylhydrazyl, piperazyl and N,N'-dimethylethylenediamino groups.
Claim 5
Dependent Claim
109 words
A process for depositing a titanium nitride film by comprising subjecting a substrate to chemical vapor deposition using a gas source comprising a compound of the general formula: A.sub.n B.sub.m Ti wherein n and m are independently selected from integers of from 1 to 3, inclusive, provided that sum of n and m is equal to or smaller than 4; A is a cyclic hydrocarbon group or a nitrogen-containing heterocyclic group which is bonded to the titanium by π electron and selected from the group consisting of cyclopentadienyl, cycloheptatrienyl, pyrrolyl and methylpyrrolyl groups; and B is a member selected from the group consisting of sym-dimethylhydrazyl, piperazyl and N,N'-dimethylethylenediamino groups.
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US5080927A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |