US6541353B1
Expired / Lapsed
US
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Atomic layer doping apparatus and method
Assignee: Micron Technology Inc
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Filing: 2000-08-31
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Granted: 2003-04-01
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Expires: 2020-08-31
Abstract
Abstract An improved atomic layer doping apparatus is disclosed as having multiple doping regions in which individual monolayer species are first deposited and then dopant atoms contained therein are diffused into the substrate. Each doping region is chemically separated from adjacent doping regions. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent doping regions. According to the number of doping regions provided, a plurality of substrates could be simultaneously processed and run through the cycle of doping regions until a desired doping profile is obtained.
Inventors
- 👤 Gurtej Sandhu
- 👤 Trung T. Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0454; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/17; H10P32/171; H10P72/0462; H10P72/0468; H10P72/0471; H10P72/30; H10P72/33; H10P72/3304
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
149 words
A method of operating an atomic layer doping apparatus, said doping apparatus comprising a plurality of doping regions, said doping regions being chemically isolated from one another, said method comprising the steps of: positioning a plurality of wafers in respective doping regions; introducing a first dopant gas species into some of said plurality of doping regions and depositing said first dopant gas species on at least one of said plurality of wafers as a first atomic monolayer, said first atomic monolayer comprising dopant atoms of said first dopant gas species; moving said plurality of wafers from said some of said plurality of doping regions to other doping regions; and introducing a second gas species into said other doping regions and contacting said second gas species on at least one of said plurality of wafers to introduce said dopant atoms into said at least one of said plurality of wafers.
Claim 2
Independent Claim
149 words
A method of operating an atomic layer doping apparatus, said doping apparatus comprising a plurality of doping regions, said doping regions being chemically isolated from one another, said method comprising the steps of: positioning a plurality of wafers in respective doping regions; introducing a first dopant gas species into some of said plurality of doping regions and depositing said first dopant gas species on at least one of said plurality of wafers as a first atomic monolayer, said first atomic monolayer comprising dopant atoms of said first dopant gas species; moving said plurality of wafers from said some of said plurality of doping regions to other doping regions; and introducing a second gas species into said other doping regions and contacting said second gas species on at least one of said plurality of wafers to introduce said dopant atoms into said at least one of said plurality of wafers.
Claim 3
Dependent Claim
32 words
The method of claim 1 further comprising the act of sequentially moving said plurality of wafers through at least two of said plurality of doping regions in accordance with a predefined pattern.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said second gas species is a non-reactive plasma.
Claim 5
Dependent Claim
20 words
The method of claim 1 further comprising the act of annealing said at least one of said plurality of wafers.
Claim 6
Dependent Claim
21 words
The method of claim 1 further comprising the act of sequentially moving said plurality of wafers through all said doping regions.
Claim 7
Dependent Claim
23 words
The method of claim 1 further comprising the act of sequentially moving said plurality of wafers through predetermined regions of said doping regions.
Claim 8
Independent Claim
107 words
A method of conducting atomic layer doping comprising the steps of: depositing a first atomic monolayer including atoms of a first dopant species on a substrate in a first doping region; moving said substrate from said first doping region to a second doping region, which is chemically isolated from said first doping region, for depositing a second monolayer including atoms of a second dopant species on said substrate; and moving said substrate from said second doping region to a third doping region, which is chemically isolated from said first and second doping regions, for introducing said atoms of said first and second dopant species into said wafer.
Claim 9
Independent Claim
107 words
A method of conducting atomic layer doping comprising the steps of: depositing a first atomic monolayer including atoms of a first dopant species on a substrate in a first doping region; moving said substrate from said first doping region to a second doping region, which is chemically isolated from said first doping region, for depositing a second monolayer including atoms of a second dopant species on said substrate; and moving said substrate from said second doping region to a third doping region, which is chemically isolated from said first and second doping regions, for introducing said atoms of said first and second dopant species into said wafer.
Claim 10
Dependent Claim
47 words
The method of claim 7 , wherein said act of introducing said atoms of said first and second dopant species into said wafer further comprises introducing a non-reactive plasma into said third doping region and contacting said non-reactive plasma with said first and second atomic monolayer species.
Claim 11
Dependent Claim
40 words
The method of claim 7 , wherein said act of introducing said atoms of said first and second dopant species into said wafer further comprises heating said wafer so that said atoms diffuse into a surface region of said wafer.
Claim 12
Dependent Claim
13 words
The method of claim 7 further comprising the act of annealing said wafer.
Claim 13
Independent Claim
25 words
The method of claims 7 further comprising the act of sequentially moving said substrate back and forth between said first, second and third doping regions.
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