US6207005B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Cluster tool apparatus using plasma immersion ion implantation
Assignee: Silicon Genesis Corp
•
Filing: 1998-07-28
•
Granted: 2001-03-27
•
Expires: 2018-07-28
Abstract
Abstract A cluster tool assembly 10, 200, 300 using plasma immersion ion implantation chamber. In some embodiments, the cluster tool assembly also includes a controlled cleaving process chamber, as well as others.
Inventors
- 👤 Francois J. Henley
- 👤 Nathan Cheung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:46
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0454; C; C23; C23C; C23C14/00; C23C14/22; C23C14/48; C23C14/54; C23C14/56; C23C16/00; C23C16/44; C23C16/54; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32412; H01J37/32431; H01J37/32733; H01J37/32743; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/0428; H10P72/0456; H10P72/0468; H10P72/0471
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
106 words
An apparatus for processing substrates, said apparatus comprising: a transfer chamber comprising a robot therein; a plasma immersion ion implantation chamber (“PIII”) coupled to said transfer chamber; a controlled cleaving process (CCP) chamber adapted to provide energy to a selected region of a substrate to initiate a controlled cleaving action, the CCP chamber adapted to provide energy from a thermal source or sink, a mechanical source, a chemical source, or an electrical source, and at least a third chamber coupled to said transfer chamber, whereby the transfer chamber permits a plurality of process steps on a plurality of wafers in the other chambers without breaking vacuum.
Claim 2
Independent Claim
106 words
An apparatus for processing substrates, said apparatus comprising: a transfer chamber comprising a robot therein; a plasma immersion ion implantation chamber (“PIII”) coupled to said transfer chamber; a controlled cleaving process (CCP) chamber adapted to provide energy to a selected region of a substrate to initiate a controlled cleaving action, the CCP chamber adapted to provide energy from a thermal source or sink, a mechanical source, a chemical source, or an electrical source, and at least a third chamber coupled to said transfer chamber, whereby the transfer chamber permits a plurality of process steps on a plurality of wafers in the other chambers without breaking vacuum.
Claim 3
Dependent Claim
43 words
Apparatus of claim 1 wherein said second chamber is selected from a CVD chamber, an etch chamber, a PVD chamber, a thermal annealing chamber, a bonding chamber, a CMP chamber, a thermal treatment chamber, an epitaxial deposition chamber, and a plasma treatment chamber.
Claim 4
Dependent Claim
11 words
Apparatus of claim 1 wherein said apparatus is a cluster tool.
Claim 5
Dependent Claim
11 words
Apparatus of claim 1 wherein said PIII chamber includes multiple sources.
Claim 6
Dependent Claim
48 words
Apparatus of claim 1 wherein said PIII chamber is adopted to introduce particles through a surface of a substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth.
Claim 7
Dependent Claim
34 words
Apparatus of claim 1 wherein said PIII chamber is coupled to a source, said source is selected from hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles.
Claim 8
Dependent Claim
16 words
Apparatus of claim 1 wherein said chemical source is selected from particles, fluids, gases, or liquids.
Claim 9
Dependent Claim
12 words
Apparatus of claim 1 wherein said chemical source provides a chemical reaction.
Claim 10
Dependent Claim
15 words
Apparatus of claim 1 wherein said chemical source is flood, time-varying, spatially varying, or continuous.
Claim 11
Dependent Claim
23 words
Apparatus of claim 1 wherein said mechanical source is selected from a rotational source, translational source, compressional source, expansional source, or ultrasonic source.
Claim 12
Dependent Claim
17 words
Apparatus of claim 1 wherein said mechanical source is selected from flood, time-varying, spatially varying, or continuous.
Claim 13
Dependent Claim
18 words
Apparatus of claim 1 wherein electrical source is selected from an applied voltage or an applied electro-magnetic field.
Claim 14
Dependent Claim
15 words
Apparatus of claim 1 wherein said electrical source is flood, time-varying, spatially varying, or continuous.
Claim 15
Dependent Claim
17 words
Apparatus of claim 1 wherein said thermal source or sink is selected from radiation, convection, or conduction.
Claim 16
Dependent Claim
38 words
Apparatus of claim 1 wherein said thermal source is selected from a photon beam, a fluid jet, a liquid jet, a gas jet, an electro/magnetic field, a gas jet, an electron beam, a thermo-electric heating, and a furnace.
Claim 17
Dependent Claim
34 words
Apparatus of claim 1 wherein said thermal sink is selected from a fluid jet, a liquid jet, a gas jet, a cryogenic fluid, a super-cooled liquid, a thermo-electric cooling means, and an electro/magnetic field.
Claim 18
Dependent Claim
19 words
Apparatus of claim 1 wherein said thermal source or sink is selected from flood, time-varying, spatially varying, or continuous.
Claim 19
Dependent Claim
52 words
Apparatus of claim 1 further comprising a third chamber coupled to said transfer chamber, said third chamber being selected from a CVD chamber, an etch chamber, a PVD chamber, a thermal annealing chamber, a bonding chamber, a CMP chamber, a thermal treatment chamber, an epitaxial deposition chamber, and a plasma treatment chamber.
References Cited (Backward Citations)
US4746394A
Cited
US4808546A
Cited
US4951601A
Cited
US5196355A
Cited
JPH0319218A
Cited
US5183775A
Cited
JPH03268444A
Cited
US5305221A
Cited
US5311028A
Cited
US5296272A
Cited
US5380682A
Cited
WO1993018201A1
Cited
US5427638A
Cited
US5342652A
Cited
US5580429A
Cited
US5289010A
Cited
US5354381A
Cited
US5498290A
Cited
US5436175A
Cited
US5525159A
Cited
US5554249A
Cited
US5661043A
Cited
US5822172A
Cited
US5641707A
Cited
US5554853A
Cited
US5711812A
Cited
US5854123A
Cited
US5856674A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |