Patent US6207005B1 successfully refreshed from Google Patents.
US6207005B1
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Cluster tool apparatus using plasma immersion ion implantation
Assignee: Silicon Genesis Corp
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Filing: 1998-07-28
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Granted: 2001-03-27
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Expires: 2018-07-28
Abstract
Abstract A cluster tool assembly 10, 200, 300 using plasma immersion ion implantation chamber. In some embodiments, the cluster tool assembly also includes a controlled cleaving process chamber, as well as others.
Inventors
- 👤 Francois J. Henley
- 👤 Nathan Cheung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:29
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0454; C; C23; C23C; C23C14/00; C23C14/22; C23C14/48; C23C14/54; C23C14/56; C23C16/00; C23C16/44; C23C16/54; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32412; H01J37/32431; H01J37/32733; H01J37/32743; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/0428; H10P72/0456; H10P72/0468; H10P72/0471
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
106 words
An apparatus for processing substrates, said apparatus comprising: a transfer chamber comprising a robot therein; a plasma immersion ion implantation chamber (“PIII”) coupled to said transfer chamber; a controlled cleaving process (CCP) chamber adapted to provide energy to a selected region of a substrate to initiate a controlled cleaving action, the CCP chamber adapted to provide energy from a thermal source or sink, a mechanical source, a chemical source, or an electrical source, and at least a third chamber coupled to said transfer chamber, whereby the transfer chamber permits a plurality of process steps on a plurality of wafers in the other chambers without breaking vacuum.
Claim 2
Independent Claim
106 words
An apparatus for processing substrates, said apparatus comprising: a transfer chamber comprising a robot therein; a plasma immersion ion implantation chamber (“PIII”) coupled to said transfer chamber; a controlled cleaving process (CCP) chamber adapted to provide energy to a selected region of a substrate to initiate a controlled cleaving action, the CCP chamber adapted to provide energy from a thermal source or sink, a mechanical source, a chemical source, or an electrical source, and at least a third chamber coupled to said transfer chamber, whereby the transfer chamber permits a plurality of process steps on a plurality of wafers in the other chambers without breaking vacuum.
Claim 3
Dependent Claim
43 words
Apparatus of claim 1 wherein said second chamber is selected from a CVD chamber, an etch chamber, a PVD chamber, a thermal annealing chamber, a bonding chamber, a CMP chamber, a thermal treatment chamber, an epitaxial deposition chamber, and a plasma treatment chamber.
Claim 4
Dependent Claim
11 words
Apparatus of claim 1 wherein said apparatus is a cluster tool.
Claim 5
Dependent Claim
11 words
Apparatus of claim 1 wherein said PIII chamber includes multiple sources.
Claim 6
Dependent Claim
48 words
Apparatus of claim 1 wherein said PIII chamber is adopted to introduce particles through a surface of a substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth.
Claim 7
Dependent Claim
34 words
Apparatus of claim 1 wherein said PIII chamber is coupled to a source, said source is selected from hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles.
Claim 8
Dependent Claim
16 words
Apparatus of claim 1 wherein said chemical source is selected from particles, fluids, gases, or liquids.
Claim 9
Dependent Claim
12 words
Apparatus of claim 1 wherein said chemical source provides a chemical reaction.
Claim 10
Dependent Claim
15 words
Apparatus of claim 1 wherein said chemical source is flood, time-varying, spatially varying, or continuous.
Claim 11
Dependent Claim
23 words
Apparatus of claim 1 wherein said mechanical source is selected from a rotational source, translational source, compressional source, expansional source, or ultrasonic source.
Claim 12
Dependent Claim
17 words
Apparatus of claim 1 wherein said mechanical source is selected from flood, time-varying, spatially varying, or continuous.
Claim 13
Dependent Claim
18 words
Apparatus of claim 1 wherein electrical source is selected from an applied voltage or an applied electro-magnetic field.
Claim 14
Dependent Claim
15 words
Apparatus of claim 1 wherein said electrical source is flood, time-varying, spatially varying, or continuous.
Claim 15
Dependent Claim
17 words
Apparatus of claim 1 wherein said thermal source or sink is selected from radiation, convection, or conduction.
Claim 16
Dependent Claim
38 words
Apparatus of claim 1 wherein said thermal source is selected from a photon beam, a fluid jet, a liquid jet, a gas jet, an electro/magnetic field, a gas jet, an electron beam, a thermo-electric heating, and a furnace.
Claim 17
Dependent Claim
34 words
Apparatus of claim 1 wherein said thermal sink is selected from a fluid jet, a liquid jet, a gas jet, a cryogenic fluid, a super-cooled liquid, a thermo-electric cooling means, and an electro/magnetic field.
Claim 18
Dependent Claim
19 words
Apparatus of claim 1 wherein said thermal source or sink is selected from flood, time-varying, spatially varying, or continuous.
Claim 19
Dependent Claim
52 words
Apparatus of claim 1 further comprising a third chamber coupled to said transfer chamber, said third chamber being selected from a CVD chamber, an etch chamber, a PVD chamber, a thermal annealing chamber, a bonding chamber, a CMP chamber, a thermal treatment chamber, an epitaxial deposition chamber, and a plasma treatment chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |