Abstract An ohmic contact electrode for a semiconductor device which has a low contact resistance and high stability. The ohmic contact electrode includes: a semiconductor substrate; an atomic doping layer developed on the semiconductor substrate wherein the atomic doping layer is formed by doping impurities such that an energy level of the layer is higher than a Fermi level; a semiconductor layer developed on the atomic doping layer wherein the semiconductor layer is formed of the same material as in the semiconductor substrate; a metal electrode formed on the semiconductor layer for establishing an electric connection with the semiconductor substrate; wherein the semiconductor layer has a thickness sufficient for carriers to transfer between the metal electrode and the atomic doping layer by tunneling through the semiconductor layer.
An ohmic contact electrode for a semiconductor device, comprising: a semiconductor substrate; an atomic doping layer which is a highly doped, very thin layer of several nanometer developed on said semiconductor substrate, said atomic doping layer being formed by doping impurities such that an energy level of said layer is higher than a Fermi level; a semiconductor layer developed on said atomic doping layer, said semiconductor layer being formed of the same material as in said semiconductor substrate; a metal electrode formed on said semiconductor layer for establishing an electric connection with said semiconductor substrate; wherein said semiconductor layer having a thickness of less than 10 nanometer sufficient for carriers to transfer between said metal electrode and said atomic doping layer by tunneling through said semiconductor layer.
Claim 2
Dependent Claim
127 words
An ohmic contact electrode for a semiconductor device, comprising: a semiconductor substrate; an atomic doping layer which is a highly doped, very thin layer of several nanometer developed on said semiconductor substrate, said atomic doping layer being formed by doping impurities such that an energy level of said layer is higher than a Fermi level; a semiconductor layer developed on said atomic doping layer, said semiconductor layer being formed of the same material as in said semiconductor substrate; a metal electrode formed on said semiconductor layer for establishing an electric connection with said semiconductor substrate; wherein said semiconductor layer having a thickness of less than 10 nanometer sufficient for carriers to transfer between said metal electrode and said atomic doping layer by tunneling through said semiconductor layer.
Claim 3
Dependent Claim
42 words
An ohmic contact electrode as defined in claim 1, wherein said semiconductor substrate is formed of indium gallium phosphorus (InGaP) and said atomic doping layer has sheet carrier concentration from approximately 2×10 13 to 2×10 14 cm -2 by doping said impurities.
Claim 4
Dependent Claim
27 words
An ohmic contact electrode as defined in claim 1, wherein said impurities doped in said atomic doping layer is silicon and said metal electrode is titanium/gold (Ti/Au).