US6559472B2
Expired / Lapsed
US
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Film composition
Assignee: Micron Technology Inc
•
Filing: 2002-01-14
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Granted: 2003-05-06
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Expires: 2022-01-14
Abstract
Abstract A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.
Inventors
- 👤 Gurtej Sandhu
- 👤 Garo J. Derderian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10W20/041; H10D64/60; H10D64/66; H10D64/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
63 words
A film provided on a substrate in a semiconductor device, comprising: a) an initiation layer of an adherent material which is adsorbed to the surface of said substrate; and b) one or more reaction layers over said initiation layer, wherein each of said reaction layers is comprised of a metal or metallic compound; wherein said adherent material is at least about 30% adsorbed.
Claim 2
Dependent Claim
63 words
A film provided on a substrate in a semiconductor device, comprising: a) an initiation layer of an adherent material which is adsorbed to the surface of said substrate; and b) one or more reaction layers over said initiation layer, wherein each of said reaction layers is comprised of a metal or metallic compound; wherein said adherent material is at least about 30% adsorbed.
Claim 3
Dependent Claim
18 words
The film of claim 1 , wherein said initiation layer is not more than about 50 Angstroms thick.
Claim 4
Dependent Claim
18 words
The film of claim 2 , wherein said initiation layer is not more than about 10 Angstroms thick.
Claim 5
Dependent Claim
23 words
The film of claim 1 , wherein said initiation layer chemisorbs onto said substrate, but does not chemisorb to said additional reaction layer.
Claim 6
Dependent Claim
13 words
The film of claim 1 , comprising at least two additional reaction layers.
Claim 7
Dependent Claim
13 words
The film of claim 5 , comprising at least five additional reaction layers.
Claim 8
Dependent Claim
13 words
The film of claim 6 , comprising at least ten additional reaction layers.
Claim 9
Dependent Claim
22 words
The film of claim 6 , wherein said additional reaction layer(s) are at least five times as thick as said initiation layer.
Claim 10
Dependent Claim
13 words
The film of claim 1 , wherein said film is a barrier film.
Claim 11
Dependent Claim
14 words
The film of claim 1 , wherein said film is a gate oxide film.
Claim 12
Dependent Claim
20 words
The film of claim 8 , wherein said initiation layer is adsorbed onto at least about 50% of said substrate.
Claim 13
Dependent Claim
20 words
The film of claim 5 , wherein said initiation layer is adsorbed onto at least about 80% of said substrate.
Claim 14
Dependent Claim
20 words
The film of claim 12 , wherein said initiation layer is adsorbed onto at least about 90% of said substrate.
Claim 15
Dependent Claim
16 words
The film of claim 1 , wherein said initiator layer is at least one zinc-containing compound.
Claim 16
Dependent Claim
14 words
The film of claim 14 , wherein said initiator layer is a zinc salt.
Claim 17
Dependent Claim
13 words
The film of claim 15 , wherein said zinc salt is zinc chloride.
Claim 18
Dependent Claim
13 words
The film of claim 14 , wherein said reaction layer(s) is zinc sulfide.
Claim 19
Dependent Claim
14 words
The film of claim 1 , wherein said reaction layer is a tungsten-containing compound.
Claim 20
Dependent Claim
24 words
The film of claim 18 , wherein said reaction layer is tungsten nitride (WN x ) and said initiation layer is a titanium-containing compound.
Claim 21
Dependent Claim
14 words
The film of claim 19 , wherein said initiation layer consists essentially of titanium.
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