Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2

Claim 2

In semiconductor manufacture a CVD method for depositing a metal silicide conductive film on a substrate comprising: placing the substrate in a CVD reaction chamber; maintaining the reaction chamber under vacuum pressure; introducing a metal precursor deposition gas and a silicon source gas into the reaction chamber for reaction to deposit the metal silicide conductive film on the substrate wherein said metal precursor gas is selected from the group consisting of an organic or inorganic metal source and said silicon source gas is selected from the group consisting of an organic or inorganic silicon source; generating a plasma from the gases within the reaction chamber by introducing a plasma forming energy into the reaction chamber; pulsing the plasma energy to shift the dynamic equilibrium of the plasma for reaction mechanics for depositing the metal silicide conductive film and diffusing reactant by products away from the substrate; adjusting a pulse power, a pulse duration and a gas chemistry of the metal precursor deposition gas and silicon source gas during deposition to improve deposition reaction mechanics and form the metal silicide film with an as deposited resistivity; and then annealing the metal silicide conductive film using a rapid thermal anneal to lower the as deposited resistivity.

Claim 3

The CVD method as recited in claim 1 and wherein the plasma is generated using a power source selected from the group consisting of modulated rf power, microwave power, or DC power.

Claim 4

The CVD method as recited in claim 2 and wherein the reaction chamber comprises a cold wall CVD reactor.

Claim 5

The CVD method as recited in claim 3 and wherein the metal silicide conductive film is TiSi 2 having a resistivity after rapid thermal annealing of about 20 μΩ-cm.

Claim 6

In semiconductor manufacture, a pulse plasma enhanced chemical vapor deposition (PPECVD) method for depositing a metal silicide conductive film on a substrate, comprising: placing the substrate in a CVD reaction chamber of a cold wall reactor said substrate including a material selected from the class of materials consisting of silicon, polysilicon or SiO 2 ; maintaining the reaction chamber under a vacuum pressure; introducing a metal precursor deposition gas and a silicon source gas into the reaction chamber for reaction with the metal silicide conductive film on the substrate wherein said metal precursor deposition gas is selected from the group consisting of a metal halide, a metal dialkyamide, (TiCl 4 ), (TDEAT), (TDMAT), (TZAT), or (Tris (2, 2' bipyridine) titanium) and said silicon source gas is selected from the group consisting of (SiH 4 ), (Si 2 H 6 ), (SiBr 4 ), (SiF 4 ), (SiH 2 Cl 2 ), (HMDS), (DMDCS), (TMCS), (DMDMOS), or (BDMADMS); generating a plasma from the gases within the reaction chamber using an rf power source coupled to the reaction chamber; pulsing the rf power to form a pulsed plasma; adjusting the rf power and a gas chemistry of the metal precursor deposition gas and silicon source gas during deposition of the metal silicide conductive film to improve deposition reaction mechanics and form the metal silicide conductive film with an as deposited resistivity; and then annealing the metal silicide conductive film using a rapid thermal anneal to lower the as deposited resistivity.

Claim 7

In semiconductor manufacture, a pulse plasma enhanced chemical vapor deposition (PPECVD) method for depositing a metal silicide conductive film on a substrate, comprising: placing the substrate in a CVD reaction chamber of a cold wall reactor said substrate including a material selected from the class of materials consisting of silicon, polysilicon or SiO 2 ; maintaining the reaction chamber under a vacuum pressure; introducing a metal precursor deposition gas and a silicon source gas into the reaction chamber for reaction with the metal silicide conductive film on the substrate wherein said metal precursor deposition gas is selected from the group consisting of a metal halide, a metal dialkyamide, (TiCl 4 ), (TDEAT), (TDMAT), (TZAT), or (Tris (2, 2' bipyridine) titanium) and said silicon source gas is selected from the group consisting of (SiH 4 ), (Si 2 H 6 ), (SiBr 4 ), (SiF 4 ), (SiH 2 Cl 2 ), (HMDS), (DMDCS), (TMCS), (DMDMOS), or (BDMADMS); generating a plasma from the gases within the reaction chamber using an rf power source coupled to the reaction chamber; pulsing the rf power to form a pulsed plasma; adjusting the rf power and a gas chemistry of the metal precursor deposition gas and silicon source gas during deposition of the metal silicide conductive film to improve deposition reaction mechanics and form the metal silicide conductive film with an as deposited resistivity; and then annealing the metal silicide conductive film using a rapid thermal anneal to lower the as deposited resistivity.

Claim 8

The PPECVD method as recited in claim 4 and wherein the power source is an rf pulse generator pulsed at a frequency of between 50 Hz-10,000 Hz.

Claim 9

The PPECVD method as recited in claim 6 and wherein a deposition temperature is between about 200°-700° C., and a silicon source gas flow is between about 5-40 sccm.

Claim 10

The PPECVD method as recited in claim 7 and wherein the pulses are with a duty cycle in range of 15-80%.

Claim 11

In semiconductor manufacture, a PPECVD method for depositing a TiSi 2 film on a substrate comprising: placing the substrate in a CVD reaction chamber of a cold wall reactor said substrate including a material selected from the class consisting of silicon, polysilicon or SiO 2 ; maintaining the reaction chamber under a vacuum pressure; introducing a titanium precursor deposition gas selected from the group consisting of, a metal dialkyamide, (TiCl 4 ), (TDMAT), (TDEAT), (TZAT), or (Tris (2, 2' bipyridine) titanium) into the reaction chamber along with a reactant silicon source gas selected from the group consisting of (SiH 4 ), (Si 2 H 6 ), (SiBr 4 ), (SiF 4 ), SiH 2 Cl 2 ), (HMDS), (DMDCS), (TMCS), (DMDMOS), or (BDMADMS) for reaction with the precursor deposition gas for depositing the TiSi 2 film on the substrate; generating a plasma from the gases within the reaction chamber by introducing a plasma forming energy into the reaction chamber; pulsing the plasma energy to shift a dynamic equilibrium of the plasma for the reaction mechanics for depositing the TiSi 2 film; and adjusting the plasma energy, a pulse duration and a gas chemistry to form the TiSi 2 film with an as deposited resistivity; and then annealing the TiSi 2 film using a rapid thermal anneal to lower the as deposited resistivity.

Claim 12

In semiconductor manufacture, a PPECVD method for depositing a TiSi 2 film on a substrate comprising: placing the substrate in a CVD reaction chamber of a cold wall reactor said substrate including a material selected from the class consisting of silicon, polysilicon or SiO 2 ; maintaining the reaction chamber under a vacuum pressure; introducing a titanium precursor deposition gas selected from the group consisting of, a metal dialkyamide, (TiCl 4 ), (TDMAT), (TDEAT), (TZAT), or (Tris (2, 2' bipyridine) titanium) into the reaction chamber along with a reactant silicon source gas selected from the group consisting of (SiH 4 ), (Si 2 H 6 ), (SiBr 4 ), (SiF 4 ), SiH 2 Cl 2 ), (HMDS), (DMDCS), (TMCS), (DMDMOS), or (BDMADMS) for reaction with the precursor deposition gas for depositing the TiSi 2 film on the substrate; generating a plasma from the gases within the reaction chamber by introducing a plasma forming energy into the reaction chamber; pulsing the plasma energy to shift a dynamic equilibrium of the plasma for the reaction mechanics for depositing the TiSi 2 film; and adjusting the plasma energy, a pulse duration and a gas chemistry to form the TiSi 2 film with an as deposited resistivity; and then annealing the TiSi 2 film using a rapid thermal anneal to lower the as deposited resistivity.

Claim 13

The PPECVD method as recited in claim 9 and wherein the metal precursor deposition gas is (TiCl 4 ) and the silicon source gas is (SiH 4 ).

Claim 14

The PPECVD method as recited in claim 9 and wherein the plasma is generated with an rf power supply that is pulsed using a pulse generator.

Claim 15

The PPECVD method as recited in claim 9 and wherein the TiSi 2 film is used in a contact metallization process to form low resistivity contacts.

Claim 16

The PPECVD method as recited in claim 12 and wherein the deposition temperature is from 200°-700° C. and a flow rate of the silicon source gas is between about 5-40 sccm.

Claim 17

The PPECVD method as recited in claim 13 and wherein the deposited TiSi 2 has a bulk resistivity of about 20 μΩ-cm.