US4977106A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tin chemical vapor deposition using TiCl4 and SiH4
Assignee: Texas Instruments Inc
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Filing: 1990-05-01
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Granted: 1990-12-11
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Expires: 2010-05-01
Abstract
Abstract A procedure in the formation of semiconductor devices for depositing TiN wherein silane and preferably SiH4 is substituted for the hydrogen in the prior art procedures to provide the approximate twofold to fivefold increase in TiN deposition rate at 400 degrees C. It is believed that the reason for the deposition rate increase is that there is a larger free energy change in the reaction which is believed to occur according to the equation: TiCl4+SiH4+NH3→TiN+SiCl4+(7/2)H2. The above described reaction provides cleaner films when performed in a cold wall CVD reactor than is provided by the prior art procedures as described above. Resistivity of 100 microohm-cm has been measured, this being typical of sputtered TiN films.
Inventors
- 👤 Gregory C. Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
120 words
A method of forming a titanium nitride layer in the fabrication of a semiconductor device, comprising the steps of: (a) providing a semiconductor device under fabrication; (b) placing said device in a vacuum of from about 0.1 to about 10 Torr; (c) adjusting the temperature of said device in said chamber to from about 375 to about 500 degrees C.; (d) applying a stream of each of from about 5 to about 100 SCCM TiCl4, from about 200 to about 500 SCCM NH3 and from about 200 to about 500 SCCM of a silane having from 1 to 3 silicon atoms in said chamber for a predetermined time to form a layer of TiN over the surface of said device.
Claim 2
Independent Claim
120 words
A method of forming a titanium nitride layer in the fabrication of a semiconductor device, comprising the steps of: (a) providing a semiconductor device under fabrication; (b) placing said device in a vacuum of from about 0.1 to about 10 Torr; (c) adjusting the temperature of said device in said chamber to from about 375 to about 500 degrees C.; (d) applying a stream of each of from about 5 to about 100 SCCM TiCl4, from about 200 to about 500 SCCM NH3 and from about 200 to about 500 SCCM of a silane having from 1 to 3 silicon atoms in said chamber for a predetermined time to form a layer of TiN over the surface of said device.
Claim 3
Dependent Claim
10 words
The method of claim 1 wherein said silane is SiH4.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein said temperature is about 400 degrees C.
Claim 5
Dependent Claim
13 words
The method of claim 2 wherein said temperature is about 400 degrees C.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein said pressure is about 1 Torr.
Claim 7
Dependent Claim
12 words
The method of claim 2 wherein said pressure is about 1 Torr.
Claim 8
Dependent Claim
12 words
The method of claim 3 wherein said pressure is about 1 Torr.
Claim 9
Dependent Claim
12 words
The method of claim 4 wherein said pressure is about 1 Torr.
Claim 10
Dependent Claim
31 words
The method of claim 1 wherein said stream of TiCl4 is about 10 SCCM, said stream of NH3 is about 300 SCCM and said stream of silane is about 300 SCCM.
Claim 11
Dependent Claim
31 words
The method of claim 3 wherein said stream of TiCl4 is about 10 SCCM, said stream of NH3 is about 300 SCCM and said stream of silane is about 300 SCCM.
Claim 12
Dependent Claim
31 words
The method of claim 5 wherein said stream of TiCl4 is about 10 SCCM, said stream of NH3 is about 300 SCCM and said stream of silane is about 300 SCCM.
Claim 13
Dependent Claim
31 words
The method of claim 7 wherein said stream of TiCl4 is about 10 SCCM, said stream of NH3 is about 300 SCCM and said stream of silane is about 300 SCCM.
Claim 14
Dependent Claim
31 words
The method of claim 2 wherein said stream of TiCl4 is about 10 SCCM, said stream of NH3 is about 300 SCCM and said stream of silane is about 300 SCCM.
Claim 15
Dependent Claim
31 words
The method of claim 4 wherein said stream of TiCl4 is about 10 SCCM, said stream of NH3 is about 300 SCCM and said stream of silane is about 300 SCCM.
Claim 16
Dependent Claim
31 words
The method of claim 6 wherein said stream of TiCl4 is about 10 SCCM, said stream of NH3 is about 300 SCCM and said stream of silane is about 300 SCCM.
Claim 17
Dependent Claim
31 words
The method of claim 8 wherein said stream of TiCl4 is about 10 SCCM, said stream of NH3 is about 300 SCCM and said stream of silane is about 300 SCCM.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-12-10 | 1994-06-11 | 1994-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-10 | 1998-06-11 | 1998-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-10 | 2002-06-11 | 2002-12-11 | $7700.00 | Window Closed / Lapsed |