Method and apparatus for forming microstructure body

Claim 1

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a rugged position of the substrate, then forming a layer of at least one second element on a part of the substrate on which the layer of the first element is not formed, and not on the layer of the first element, wherein the first element is selected from the group consisting of gold, silver, copper, nickel, palladium, platinum and elements of group IV and the second element is selected from the group consisting of elements of group III, elements of group IV and elements of group V.

Claim 2

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a rugged position of the substrate, then forming a layer of at least one second element on a part of the substrate on which the layer of the first element is not formed, and not on the layer of the first element, wherein the first element is selected from the group consisting of gold, silver, copper, nickel, palladium, platinum and elements of group IV and the second element is selected from the group consisting of elements of group III, elements of group IV and elements of group V.

Claim 24

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein the substrate comprises silicon, the first element is gold and the second element is silicon, and face (111) of the substrate is cleaned to obtain a substrate surface having a step having a height of one monolayer, gold is vapor deposited on the surface of the substrate kept at 300°-800° C. to carry out rearrangement of gold atoms along an edge line of a terrace just under the step, thereby to form a layer thinner than one monolayer which has a width of nanometer order and furthermore, silicon of the second element is vapor deposited to form a silicon layer on the layer of silicon which is not covered with the thin layer of gold.

Claim 25

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein the substrate comprises silicon, the first element is gold and the second element is silicon, and face (111) of the substrate is cleaned to obtain a substrate surface having a step having a height of one monolayer, gold is vapor deposited on the surface of the substrate kept at 300°-800° C. to carry out rearrangement of gold atoms along an edge line of a terrace just under the step, thereby to form a layer thinner than one monolayer which has a width of nanometer order and furthermore, silicon of the second element is vapor deposited to form a silicon layer on the layer of silicon which is not covered with the thin layer of gold.

Claim 26

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein the substrate comprises silicon, the first element is gold and the second element is silicon, and the surface of the substrate is cleaned to obtain a substrate surface having a step having a height of single atom, gold is vapor deposited on the surface of the substrate kept at 300°-800° C. to carry out rearrangement of gold atoms along an edge line of a terrace just under the step, thereby to form a layer thinner than one monolayer which has a width of nanometer order, furthermore, silicon of the second element is vapor deposited to grow and form a silicon layer on the layer of silicon which is not covered with the thin layer of gold and then, the substrate is heated at 800°-1200° C. to remove the gold by evaporation thereby to form a groove.

Claim 27

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein the substrate comprises silicon, the first element is gold and the second element is silicon, and the surface of the substrate is cleaned to obtain a substrate surface having a step having a height of single atom, gold is vapor deposited on the surface of the substrate kept at 300°-800° C. to carry out rearrangement of gold atoms along an edge line of a terrace just under the step, thereby to form a layer thinner than one monolayer which has a width of nanometer order, furthermore, silicon of the second element is vapor deposited to grow and form a silicon layer on the layer of silicon which is not covered with the thin layer of gold and then, the substrate is heated at 800°-1200° C. to remove the gold by evaporation thereby to form a groove.

Claim 28

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein the substrate comprises silicon, the first element is germanium and the second element is gallium, and the surface of the substrate is cleaned to obtain a substrate surface having a step of single atomic layer in height, germanium is vapor deposited on the surface of the substrate to carry out rearrangement of germanium atoms along an edge line of a terrace just under the step, thereby to form a germanium layer of thinner than one monolayer which has a width of nanometer order and furthermore, gallium of the second element is vapor deposited at a substrate temperature higher than the temperature at which gallium on the germanium layer is released and lower than the temperature at which gallium on the silicon substrate is released, thereby to form a germanium layer and a gallium layer on the silicon substrate.

Claim 29

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein the substrate comprises silicon, the first element is germanium and the second element is gallium, and the surface of the substrate is cleaned to obtain a substrate surface having a step of single atomic layer in height, germanium is vapor deposited on the surface of the substrate to carry out rearrangement of germanium atoms along an edge line of a terrace just under the step, thereby to form a germanium layer of thinner than one monolayer which has a width of nanometer order and furthermore, gallium of the second element is vapor deposited at a substrate temperature higher than the temperature at which gallium on the germanium layer is released and lower than the temperature at which gallium on the silicon substrate is released, thereby to form a germanium layer and a gallium layer on the silicon substrate.

Claim 30

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein the substrate comprises silicon, the first element is germanium and the second element is gallium, and the surface of the substrate is cleaned to obtain a substrate surface having a step of single atomic layer in height, germanium is vapor deposited on the surface of the substrate to carry out rearrangement of germanium atoms along an edge line of a terrace just under the step, thereby to form a germanium layer thinner than one monolayer which has a width of nanometer order, furthermore, gallium of the second element is vapor deposited at a substrate temperature higher than the temperature at which gallium on the germanium layer is released and lower than the temperature at which gallium on the silicon substrate is released, thereby to form a germanium layer and a gallium layer on the silicon substrate, and then, silicon atom is deposited on both the layers to provide a mixed crystal thin layer of silicon and germanium, a silicon layer doped with gallium and a silicon thin layer having thereon a gallium layer formed by surface segregation.

Claim 31

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein the substrate comprises silicon, the first element is germanium and the second element is gallium, and the surface of the substrate is cleaned to obtain a substrate surface having a step of single atomic layer in height, germanium is vapor deposited on the surface of the substrate to carry out rearrangement of germanium atoms along an edge line of a terrace just under the step, thereby to form a germanium layer thinner than one monolayer which has a width of nanometer order, furthermore, gallium of the second element is vapor deposited at a substrate temperature higher than the temperature at which gallium on the germanium layer is released and lower than the temperature at which gallium on the silicon substrate is released, thereby to form a germanium layer and a gallium layer on the silicon substrate, and then, silicon atom is deposited on both the layers to provide a mixed crystal thin layer of silicon and germanium, a silicon layer doped with gallium and a silicon thin layer having thereon a gallium layer formed by surface segregation.

Claim 32

A method for making a microstructure body on a substrate which comprises forming a layer of a first element thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein a rectangular layer thinner than one monolayer of germanium of the first element is formed utilizing lattice defect on the silicon substrate, furthermore, gallium of the second element is vapor deposited at a substrate temperature higher than the temperature at which gallium on the germanium layer is released and lower than the temperature at which gallium on the silicon substrate is released, thereby to form a germanium layer and a gallium layer on the silicon substrate, then, silicon atom is deposited on both the layers to provide a box-shaped mixed crystal thin layer of silicon and germanium, a silicon layer doped with gallium and a silicon thin layer having thereon a gallium layer formed by surface segregation, successively the gallium layer is removed by evaporation, silicon is grown by step flow growth on the silicon layer doped with gallium to form a silicon thin layer, further successively a gallium layer of one monolayer or less is formed on the whole surface of both the mixed crystal thin layer of silicon and germanium and the silicon thin layer and then silicon is grown by two-dimensional nuclear growth to provide a silicon thin layer having a gallium layer thereon formed by surface segregation.

Claim 33

A method for making a microstructure body on a substrate which comprises forming a layer of a first element thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein a rectangular layer thinner than one monolayer of germanium of the first element is formed utilizing lattice defect on the silicon substrate, furthermore, gallium of the second element is vapor deposited at a substrate temperature higher than the temperature at which gallium on the germanium layer is released and lower than the temperature at which gallium on the silicon substrate is released, thereby to form a germanium layer and a gallium layer on the silicon substrate, then, silicon atom is deposited on both the layers to provide a box-shaped mixed crystal thin layer of silicon and germanium, a silicon layer doped with gallium and a silicon thin layer having thereon a gallium layer formed by surface segregation, successively the gallium layer is removed by evaporation, silicon is grown by step flow growth on the silicon layer doped with gallium to form a silicon thin layer, further successively a gallium layer of one monolayer or less is formed on the whole surface of both the mixed crystal thin layer of silicon and germanium and the silicon thin layer and then silicon is grown by two-dimensional nuclear growth to provide a silicon thin layer having a gallium layer thereon formed by surface segregation.

Claim 34

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, and then covering the substrate and the microstructure body with a protective layer.

Claim 35

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, and then covering the substrate and the microstructure body with a protective layer.

Claim 36

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein a rectangular groove is formed on the surface of the silicon substrate by removing surface atoms by a probe of a scanning tunneling microscope, a thin layer of germanium of the first element is formed in the groove, furthermore, gallium of the second element is vapor deposited at a substrate temperature higher than the temperature at which gallium on the germanium layer is released and lower than the temperature at which gallium on the silicon substrate is released, thereby to form a gallium layer selectively on the silicon substrate, then, silicon atom is deposited on both the layers to provide a box-shaped mixed crystal thin layer of silicon and germanium, a silicon layer doped with gallium and a silicon thin layer having thereon a gallium layer formed by surface segregation, successively the gallium layer is removed by evaporation, silicon is grown by step flow growth on the silicon layer doped with gallium to form a silicon thin layer, further successively a gallium layer thinner than one monolayer is formed on the whole surface of both the mixed crystal thin layer of silicon and germanium and the silicon thin layer and then silicon is grown by two-dimensional nuclear growth to provide a silicon thin layer having a gallium layer thereon formed by surface segregation.

Claim 37

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a position of the substrate stable in energy formed by ruggedness of rugged pattern in the order of atomic size present on the substrate, and then depositing at least one second element on a part of the substrate on which the layer of the first element is not formed, wherein a rectangular groove is formed on the surface of the silicon substrate by removing surface atoms by a probe of a scanning tunneling microscope, a thin layer of germanium of the first element is formed in the groove, furthermore, gallium of the second element is vapor deposited at a substrate temperature higher than the temperature at which gallium on the germanium layer is released and lower than the temperature at which gallium on the silicon substrate is released, thereby to form a gallium layer selectively on the silicon substrate, then, silicon atom is deposited on both the layers to provide a box-shaped mixed crystal thin layer of silicon and germanium, a silicon layer doped with gallium and a silicon thin layer having thereon a gallium layer formed by surface segregation, successively the gallium layer is removed by evaporation, silicon is grown by step flow growth on the silicon layer doped with gallium to form a silicon thin layer, further successively a gallium layer thinner than one monolayer is formed on the whole surface of both the mixed crystal thin layer of silicon and germanium and the silicon thin layer and then silicon is grown by two-dimensional nuclear growth to provide a silicon thin layer having a gallium layer thereon formed by surface segregation.

Claim 38

A method for making a microstructure body on a substrate, which comprises providing a substrate having a rugged position, forming a layer of a first element, thinner than one monolayer, at the rugged position, controlling a temperature of the substrate such that a second element cannot form a layer on the layer of the first element, and then depositing the second element.

Claim 39

A method for making a microstructure body on a substrate, which comprises providing a substrate having a rugged position, forming a layer of a first element, thinner than one monolayer, at the rugged position, controlling a temperature of the substrate such that a second element cannot form a layer on the layer of the first element, and then depositing the second element.

Claim 46

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a rugged position of the substrate, then forming a layer of at least one second element on a part of the substrate on which the layer of the first element is not formed, and not on the layer of the first element, removing said layer of the first element, so as to form a groove where said layer of the first element had been, and supplying a further element in said groove.

Claim 47

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a rugged position of the substrate, then forming a layer of at least one second element on a part of the substrate on which the layer of the first element is not formed, and not on the layer of the first element, removing said layer of the first element, so as to form a groove where said layer of the first element had been, and supplying a further element in said groove.

Claim 48

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a rugged position of the substrate, then forming a layer of at least one second element on a part of the substrate on which the layer of the first element is not formed, and not on the layer of the first element, wherein a temperature of the substrate is controlled during the forming of the layer of the at least one second element, such that the layer of the at least one second element is formed on said part of the substrate and not on the layer of the first element.

Claim 49

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a rugged position of the substrate, then forming a layer of at least one second element on a part of the substrate on which the layer of the first element is not formed, and not on the layer of the first element, wherein a temperature of the substrate is controlled during the forming of the layer of the at least one second element, such that the layer of the at least one second element is formed on said part of the substrate and not on the layer of the first element.

Claim 50

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a rugged position of the substrate, then forming a layer of at least one second element on a part of the substrate on which the layer of the first element is not formed, and not on the layer of the first element, wherein the substrate comprises a semiconductor, the semiconductor being a single element semiconductor, a III-V group compound semiconductor or a II-VI group compound semiconductor, and wherein the first element is selected from the group consisting of Ag, Cu, Ni, Pd, Pt and Au.

Claim 51

A method for making a microstructure body on a substrate which comprises forming a layer of a first element, thinner than one monolayer, by arranging the first element at a rugged position of the substrate, then forming a layer of at least one second element on a part of the substrate on which the layer of the first element is not formed, and not on the layer of the first element, wherein the substrate comprises a semiconductor, the semiconductor being a single element semiconductor, a III-V group compound semiconductor or a II-VI group compound semiconductor, and wherein the first element is selected from the group consisting of Ag, Cu, Ni, Pd, Pt and Au.