US5416331A — Surface atom fabrication method and apparatus

Claim 1

Independent Claim 91 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a negative voltage for forming an electric field between said probe and said specimen and scanning said probe across said specimen, wherein said electric field is large enough for field-evaporating atoms from said specimen; and selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface.

Claim 2

Dependent Claim 91 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a negative voltage for forming an electric field between said probe and said specimen and scanning said probe across said specimen, wherein said electric field is large enough for field-evaporating atoms from said specimen; and selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface.

Claim 3

Dependent Claim 183 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude insufficient to cause changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during said scanning, applying a pulsative negative voltage for forming an electric field between said probe and said specimen, wherein said electric field is large enough to field-evaporate atoms constituting said specimen; and selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface.

Claim 4

Dependent Claim 183 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude insufficient to cause changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during said scanning, applying a pulsative negative voltage for forming an electric field between said probe and said specimen, wherein said electric field is large enough to field-evaporate atoms constituting said specimen; and selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface.

Claim 5

Dependent Claim 276 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude insufficient to cause changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, obtaining variations in scanning probe position, in the direction perpendicular to said specimen surface, as image information using a scanning tunnelling microscope for displaying the profile of said specimen surface as an image; during the scanning, applying a negative pulsative voltage for forming a negative electric field between said probe and said specimen, wherein said negative electric field is large enough to field-evaporate atoms constituting said specimen; selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface; applying a positive pulsative voltage for forming a positive electric field between said probe and said specimen, wherein said positive electric field is large enough to field-evaporate atoms constituting said probe; and selectively field-evaporating and depositing said atoms from said probe into at least some of the empty atomic positions on the surface of said specimen.

Claim 6

Dependent Claim 276 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude insufficient to cause changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, obtaining variations in scanning probe position, in the direction perpendicular to said specimen surface, as image information using a scanning tunnelling microscope for displaying the profile of said specimen surface as an image; during the scanning, applying a negative pulsative voltage for forming a negative electric field between said probe and said specimen, wherein said negative electric field is large enough to field-evaporate atoms constituting said specimen; selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface; applying a positive pulsative voltage for forming a positive electric field between said probe and said specimen, wherein said positive electric field is large enough to field-evaporate atoms constituting said probe; and selectively field-evaporating and depositing said atoms from said probe into at least some of the empty atomic positions on the surface of said specimen.

Claim 7

Dependent Claim 219 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude that causes no changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, storing variations in position in said direction perpendicular to said specimen's surface of said scanning probe; rescanning the surface of said specimen along said scanning trace with said probe moved in a direction perpendicular to said specimen surface in accordance with said stored variations; during said rescanning, applying a continuous or pulsative negative voltage for forming another electric field between said probe and said specimen; and selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface.

Claim 8

Dependent Claim 219 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude that causes no changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, storing variations in position in said direction perpendicular to said specimen's surface of said scanning probe; rescanning the surface of said specimen along said scanning trace with said probe moved in a direction perpendicular to said specimen surface in accordance with said stored variations; during said rescanning, applying a continuous or pulsative negative voltage for forming another electric field between said probe and said specimen; and selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface.

Claim 9

Dependent Claim 242 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude that causes no changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, storing variations in position in said direction perpendicular to said specimen's surface of said scanning probe; rescanning the surface of said specimen along said scanning trace with said probe moved in a direction perpendicular to said specimen surface in accordance with said stored variations or in accordance with a modulated result of said stored variations; during said re-scanning, applying a continuous negative voltage for forming another electric field between said probe and said specimen, wherein said another electric field is large enough to field-evaporate atoms constituting said specimen; and selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface.

Claim 10

Dependent Claim 242 words

A surface atom fabrication method for fabricating the surface of a specimen at an atomic scale comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude that causes no changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, storing variations in position in said direction perpendicular to said specimen's surface of said scanning probe; rescanning the surface of said specimen along said scanning trace with said probe moved in a direction perpendicular to said specimen surface in accordance with said stored variations or in accordance with a modulated result of said stored variations; during said re-scanning, applying a continuous negative voltage for forming another electric field between said probe and said specimen, wherein said another electric field is large enough to field-evaporate atoms constituting said specimen; and selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface.

Claim 11

Dependent Claim 57 words

A surface atom fabrication method according to claim 5, wherein the field-evaporating step applies a negative voltage to said probe relative to said specimen in order to field-evaporate atoms from said specimen, and further comprising the step of applying a positive voltage to said probe relative to said specimen in order to field-evaporate atoms from said probe.

Claim 12

Dependent Claim 272 words

A surface atom fabrication method for fabricating the surface of a specimen comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude that causes no changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, obtaining variations in position in the direction perpendicular to said specimen surface of said scanning probe as image information using a scanning tunnelling microscope for displaying the profile of said specimen surface as an image; during the scanning, applying a negative pulsative voltage for forming a negative electric field between said probe and said specimen, wherein said negative electric field is sufficient to field-evaporate atoms from said specimen; field-evaporating said atoms from the surface of said specimen to form empty atomic pockets in the specimen surface; applying a positive pulsative voltage for forming a positive electric field between said probe and said specimen, wherein said positive electric field is sufficient to field-evaporate atoms from said probe; and selectively field-evaporating and depositing said atoms from said probe to the surface of said specimen to fill the empty atomic positions in the specimen surface.

Claim 13

Dependent Claim 272 words

A surface atom fabrication method for fabricating the surface of a specimen comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude that causes no changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, obtaining variations in position in the direction perpendicular to said specimen surface of said scanning probe as image information using a scanning tunnelling microscope for displaying the profile of said specimen surface as an image; during the scanning, applying a negative pulsative voltage for forming a negative electric field between said probe and said specimen, wherein said negative electric field is sufficient to field-evaporate atoms from said specimen; field-evaporating said atoms from the surface of said specimen to form empty atomic pockets in the specimen surface; applying a positive pulsative voltage for forming a positive electric field between said probe and said specimen, wherein said positive electric field is sufficient to field-evaporate atoms from said probe; and selectively field-evaporating and depositing said atoms from said probe to the surface of said specimen to fill the empty atomic positions in the specimen surface.

Claim 14

Dependent Claim 66 words

A surface atom fabrication method according to claim 7, characterized in that said surface atom fabrication is performed by employing a plurality of probes installed in parallel to the surface of said specimen, wherein said probes scan the surface of said specimen collectively in a direction parallel to the surface of said specimen while moving individually in a direction perpendicular to the surface of said specimen.

Claim 15

Dependent Claim 106 words

A surface atom fabrication method according to claim 8 characterized in that in a process of scanning the surface of a fabricated specimen at an atomic scale using one of said probes with a tunnel current flowing between said one probe and said specimen kept constant, only when an area on the surface of said specimen with no atoms existing therein is detected, is a negative voltage relative to said specimen applied to said probes other than said one probe for generating an electric field more than enough for field-evaporating atoms constituting said specimen in order to field-evaporate said atoms from the surface of said specimen.

Claim 16

Dependent Claim 33 words

A surface atom fabrication method according to claim 8, characterized in that a mechanism is provided for supplying a material different from a material of said probe to the tip of said probe.

Claim 17

Dependent Claim 26 words

A surface atom fabrication method according to claim 8, characterized in that a layered material bound by Van der Waal's force is used as said specimen.

Claim 18

Dependent Claim 30 words

A surface atom fabrication method according to claim 8, characterized in that an externally generated continuous or pulsative beam is applied to either said specimen or said probe or both.

Claim 19

Dependent Claim 22 words

A surface atom fabrication method according to claim 8, characterized in that either said specimen or said probe or both are heated.

Claim 20

Dependent Claim 41 words

A surface atom fabrication method according to claim 8, characterized in that a material for weakening a force binding atoms constituting said specimen is made absorbed into the surface of said specimen prior to fabrication of the surface of said specimen.

Claim 21

Dependent Claim 123 words

A surface atom fabrication method according to claim 8, characterized in that: in a process of scanning the surface of said specimen using said probe with a tunnelling current flowing between said probe and said specimen kept constant, a negative voltage relative to said specimen is applied to said probe for generating a negative electric field with a magnitude more than enough to field-evaporate atoms; right after said electric field field-evaporates atoms from the surface of said specimen, a positive voltage relative to the specimen is applied to the probe for generating an electric field large enough to field evaporate atoms constituting the probe; and the positive electric field field-evaporates atoms constituting the probe, depositing said atoms on the surface of said specimen.

Claim 22

Dependent Claim 33 words

A surface atom fabrication method according to claim 7, characterized in that a mechanism is provided for supplying a material different from a material of said probe to the tip of said probe.

Claim 23

Dependent Claim 26 words

A surface atom fabrication method according to claim 7, characterized in that a layered material bound by Van der Waal's force is used as said specimen.

Claim 24

Dependent Claim 30 words

A surface atom fabrication method according to claim 7, characterized in that an externally generated continuous or pulsative beam is applied to either said specimen or said probe or both.

Claim 25

Dependent Claim 22 words

A surface atom fabrication method according to claim 7, characterized in that either said specimen or said probe or both are heated.

Claim 26

Dependent Claim 41 words

A surface atom fabrication method according to claim 7, characterized in that a material for weakening a force binding atoms constituting said specimen is made absorbed into the surface of said specimen prior to fabrication of the surface of said specimen.

Claim 27

Dependent Claim 123 words

A surface atom fabrication method according to claim 7, characterized in that: in a process of scanning the surface of said specimen using said probe with a tunnelling current flowing between said probe and said specimen kept constant, a negative voltage relative to said specimen is applied to said probe for generating a negative electric field with a magnitude more than enough to field-evaporate atoms; right after said electric field field-evaporates atoms from the surface of said specimen, a positive voltage relative to the specimen is applied to the probe for generating an electric field large enough to field evaporate atoms constituting the probe; and the positive electric field field-evaporates atoms constituting the probe, depositing said atoms on the surface of said specimen.

Claim 28

Dependent Claim 64 words

A surface atomic-level recording/retrieving method characterized in that when scanning a specimen surface formed by the surface atom fabrication method according to claim 16, the movement of said probe in a direction perpendicular to said specimen surface to keep a tunnelling current flowing between said specimen surface and said probe constant is divided into level ranges corresponding to units in which information is recorded.

Claim 29

Dependent Claim 298 words

A surface atom fabrication method for fabricating the surface of a specimen comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude that causes no changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning a specific area on the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during said scanning, storing variations in position in said direction perpendicular to said specimen's surface of said scanning probe; rescanning the surface of said specimen with said probe moved in a direction perpendicular to said specimen surface in accordance with said stored variations or in accordance with a modulation result of said stored variations or a portion thereof; during the re-scanning, continuously applying a negative voltage for forming a negative electric field between said probe and said specimen, wherein said negative electric field is sufficient to field-evaporate atoms from said specimen; field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface; continuously applying a positive voltage for forming a positive electric field between said probe and said specimen, wherein said positive electric field is more than enough to field-evaporate atoms from said probe; and selectively field-evaporating and depositing said atoms from said probe to the surface of said specimen to fill the empty atomic positions in the specimen surface.

Claim 30

Dependent Claim 298 words

A surface atom fabrication method for fabricating the surface of a specimen comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude that causes no changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning a specific area on the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during said scanning, storing variations in position in said direction perpendicular to said specimen's surface of said scanning probe; rescanning the surface of said specimen with said probe moved in a direction perpendicular to said specimen surface in accordance with said stored variations or in accordance with a modulation result of said stored variations or a portion thereof; during the re-scanning, continuously applying a negative voltage for forming a negative electric field between said probe and said specimen, wherein said negative electric field is sufficient to field-evaporate atoms from said specimen; field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface; continuously applying a positive voltage for forming a positive electric field between said probe and said specimen, wherein said positive electric field is more than enough to field-evaporate atoms from said probe; and selectively field-evaporating and depositing said atoms from said probe to the surface of said specimen to fill the empty atomic positions in the specimen surface.

Claim 31

Dependent Claim 66 words

A surface atom fabrication method according to claim 23, characterized in that said surface atom fabrication is performed by employing a plurality of probes installed in parallel to the surface of said specimen, wherein said probes scan the surface of said specimen collectively in a direction parallel to the surface of said specimen while moving individually in a direction perpendicular to the surface of said specimen.

Claim 32

Dependent Claim 33 words

A surface atom fabrication method according to claim 23, characterized in that a mechanism is provided for supplying a material different from a material of said probe to the tip of said probe.

Claim 33

Dependent Claim 26 words

A surface atom fabrication method according to claim 23, characterized in that a layered material bound by Van der Waal's force is used as said specimen.

Claim 34

Dependent Claim 30 words

A surface atom fabrication method according to claim 23, characterized in that an externally generated continuous or pulsative beam is applied to either said specimen or said probe or both.

Claim 35

Dependent Claim 22 words

A surface atom fabrication method according to claim 23, characterized in that either said specimen or said probe or both are heated.

Claim 36

Dependent Claim 41 words

A surface atom fabrication method according to claim 23, characterized in that a material for weakening a force binding atoms constituting said specimen is made absorbed into the surface of said specimen prior to fabrication of the surface of said specimen.

Claim 37

Dependent Claim 66 words

A surface atom fabrication method according to claim 23 characterized in that: a negative voltage is applied to said probe relative to a specimen surface in order to generate an electric field sufficient for field-evaporating atoms from said specimen surface; and said electric field field-evaporates atoms from said specimen surface except at a lowest portion in a range on said specimen surface scanned by said probe.

Claim 38

Dependent Claim 113 words

A surface atom fabrication apparatus equipped with a board having a regular atomic arrangement, an STM probe, a mechanism for driving said STM probe, a tunnelling-current detecting circuit and a circuit for applying an electrical effect to said probe for depositing and eliminating atoms, the improvement comprising: a memory for storing a movement track of said STM probe; and a control circuit for applying an electrical effect to said STM probe for selectively removing atoms from desired locations of said board and for selectively depositing atoms into the desired locations to fill vacancies caused by the selective removal, while scanning said board by said STM probe in accordance with a stored movement track.

Claim 39

Dependent Claim 113 words

A surface atom fabrication apparatus equipped with a board having a regular atomic arrangement, an STM probe, a mechanism for driving said STM probe, a tunnelling-current detecting circuit and a circuit for applying an electrical effect to said probe for depositing and eliminating atoms, the improvement comprising: a memory for storing a movement track of said STM probe; and a control circuit for applying an electrical effect to said STM probe for selectively removing atoms from desired locations of said board and for selectively depositing atoms into the desired locations to fill vacancies caused by the selective removal, while scanning said board by said STM probe in accordance with a stored movement track.

Claim 40

Dependent Claim 105 words

A surface atom fabrication apparatus equipped with a board having a regular atomic arrangement, an STM probe, a mechanism for driving said STM probe, a tunnelling-current detecting circuit and a circuit for applying an electrical effect to said probe for depositing and eliminating atoms, the improvement comprising: a detection circuit for locating atomic positions on the surface of a specimen; and a control circuit for applying an electrical effect to said STM probe for selectively removing atoms from predetermined atomic positions of the specimen surface located by said detection circuit to form empty atomic positions thereof, and for depositing atoms into the empty atomic positions.

Claim 41

Dependent Claim 105 words

A surface atom fabrication apparatus equipped with a board having a regular atomic arrangement, an STM probe, a mechanism for driving said STM probe, a tunnelling-current detecting circuit and a circuit for applying an electrical effect to said probe for depositing and eliminating atoms, the improvement comprising: a detection circuit for locating atomic positions on the surface of a specimen; and a control circuit for applying an electrical effect to said STM probe for selectively removing atoms from predetermined atomic positions of the specimen surface located by said detection circuit to form empty atomic positions thereof, and for depositing atoms into the empty atomic positions.

Claim 42

Dependent Claim 25 words

A surface atom fabrication apparatus according to claim 32 characterized by including a board temperature control means for keeping the temperature of said board constant.

Claim 43

Dependent Claim 112 words

A semiconductor active-area forming method characterized by adopting a process for forming an active area of a conduction type determined in advance in semiconductor crystals, said process comprising the steps of: applying a strong negative electric field between an STM probe and predetermined atoms located on a clean surface serving as said active area in order to selectively field-evaporate said atoms; filling up vacancies left by said field-evaporated atoms by using said STM probe with impurity atoms implementing said conduction type of said active area; and forming a layer of semiconductor crystals of a type identical with or different from said semiconductor crystals or an insulating layer on said entire clean surface.

Claim 44

Dependent Claim 112 words

A semiconductor active-area forming method characterized by adopting a process for forming an active area of a conduction type determined in advance in semiconductor crystals, said process comprising the steps of: applying a strong negative electric field between an STM probe and predetermined atoms located on a clean surface serving as said active area in order to selectively field-evaporate said atoms; filling up vacancies left by said field-evaporated atoms by using said STM probe with impurity atoms implementing said conduction type of said active area; and forming a layer of semiconductor crystals of a type identical with or different from said semiconductor crystals or an insulating layer on said entire clean surface.

Claim 45

Dependent Claim 101 words

A quantum-wire forming method, comprising the steps of: engraving a fine trench with a width of 10 nm or smaller and a depth of 10 nm or smaller on the surface of a board made of a first semiconductor; and filling up said fine trench with a second semiconductor having a prohibition bandwidth smaller than said first semiconductor; wherein said engraving step is performed by field-evaporating atoms from the surface of said first semiconductor board by applying a strong electric field between the surface of said first-semiconductor board and an installed probe facing to the surface of said first semiconductor board.

Claim 46

Dependent Claim 101 words

A quantum-wire forming method, comprising the steps of: engraving a fine trench with a width of 10 nm or smaller and a depth of 10 nm or smaller on the surface of a board made of a first semiconductor; and filling up said fine trench with a second semiconductor having a prohibition bandwidth smaller than said first semiconductor; wherein said engraving step is performed by field-evaporating atoms from the surface of said first semiconductor board by applying a strong electric field between the surface of said first-semiconductor board and an installed probe facing to the surface of said first semiconductor board.

Claim 47

Dependent Claim 301 words

A multi-valued memory recording/reproducing method, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude insufficient to cause changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, obtaining variations in scanning probe position, in the direction perpendicular to said specimen surface, as image information using a scanning tunnelling microscope for displaying the profile of said specimen surface as an image; during the scanning, applying a negative pulsative voltage for forming a negative electric field between said probe and said specimen, wherein said negative electric field is large enough to field-evaporate atoms constituting said specimen; selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface; applying a positive pulsative voltage for forming a positive electric field between said probe and said specimen, wherein said positive electric field is large enough to field-evaporate atoms constituting said probe; and selectively field-evaporating and depositing said atoms from said probe into at least some of the empty atomic positions on the surface of said specimen; wherein an empty atomic position represents a first memory value, an atomic position containing a specimen atom represents a second memory value, and an atomic position containing a deposited probe atom represents a third memory value.

Claim 48

Dependent Claim 301 words

A multi-valued memory recording/reproducing method, comprising the steps of: installing a probe having a tip facing to the surface of said specimen to undergo fabrication; applying a voltage for forming an electric field between said probe and said specimen, wherein said electric field has a magnitude insufficient to cause changes in atomic arrangement on the surface of said specimen; controlling the position of said probe in a direction perpendicular to the surface of said specimen in order to keep a tunnelling current flowing between said probe and said specimen constant; while the position of said probe is controlled in this way, scanning the surface of said specimen with said probe in a direction parallel to the surface of said specimen; during the scanning, obtaining variations in scanning probe position, in the direction perpendicular to said specimen surface, as image information using a scanning tunnelling microscope for displaying the profile of said specimen surface as an image; during the scanning, applying a negative pulsative voltage for forming a negative electric field between said probe and said specimen, wherein said negative electric field is large enough to field-evaporate atoms constituting said specimen; selectively field-evaporating said atoms from the surface of said specimen to form empty atomic positions in the specimen surface; applying a positive pulsative voltage for forming a positive electric field between said probe and said specimen, wherein said positive electric field is large enough to field-evaporate atoms constituting said probe; and selectively field-evaporating and depositing said atoms from said probe into at least some of the empty atomic positions on the surface of said specimen; wherein an empty atomic position represents a first memory value, an atomic position containing a specimen atom represents a second memory value, and an atomic position containing a deposited probe atom represents a third memory value.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1998-05-15	1998-11-14	1999-05-16	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2002-05-15	2002-11-14	2003-05-16	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2006-05-15	2006-11-14	2007-05-16	$7700.00	Window Closed / Lapsed

Surface atom fabrication method and apparatus

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