Nanometer-scale structures and lithography

Claim 2

An improved process for nanometer scale structure fabrication using a technique involving application of a voltage pulse between a sharp tip and a conducting or semiconducting substrate wherein the improvement comprises 1) depositing a nonconducting polymer coating on the surface of a conducting or semiconducting substrate, 2) allowing the moisture level of the polymer coating and the substrate to equilibrate with an enclosed atmosphere surrounding the tip and the coated substrate, and 3) ascertaining that equilibration is achieved by monitoring pulsing conditions to determine when such conditions become constant, prior to commencing fabrication of a structure on the substrate.

Claim 3

The process of claim 1 wherein the technique comprises scanning tunneling microscopy.

Claim 4

The process of claim 1 wherein the polymer coating is less than about 100 nm in thickness.

Claim 5

The process of claim 1 wherein the tip is within a distance of less than about 1 nm from the coated substrate or the coating during fabrication.

Claim 6

The process of claim 1 wherein the substrate comprises graphite, gold, metallic glass, superconductors, magnetic media, metal chalcogenides, or phase change materials.

Claim 7

The process of claim 1 wherein the substrate comprises graphite.

Claim 8

The process of claim 1 wherein the polymeric coating comprises a fluorocarbon polymer, polyalkyl alcohol, polyvinyl alcohol, cyanoethyl polymers, polysilanes, polydienes, celluloses, polystyrenes, polyurethane, Teflon® or a water soluble polymer.

Claim 9

The process of claim 7 wherein the polymeric coating comprises a fluorocarbon polymer.

Claim 10

The process of claim 7 wherein the polymeric coating is polyvinyl alcohol.

Claim 11

The process of claim 6 wherein the polymeric coating is hydroxypropylcellulose.

Claim 12

The process of claim 10 wherein the fabricated structure resides in the polymeric coating.

Claim 13

The process of claim 1 wherein the fabricated structure has a diameter of less than about 10 nm.

Claim 14

The process of claim 1 wherein the humidity of the enclosed atmosphere is at least about 60% at room temperature.

Claim 15

The process of claim 1 wherein the polymer is deposited as a Langmuir Blodgett film as a single monolayer or multilayers.

Claim 16

The process of claim 1 wherein the pulsing conditions employed are triangular pulses of about 1 to about 20 microseconds duration, or square pulses of about 8 to about 100 nanoseconds duration.

Claim 17

An improved process for nanometer scale structure fabrication using a technique involving application of a voltage pulse between a sharp tip or stylus and a conducting or semiconducting substrate wherein the improvement comprises 1) dipping a conducting or semiconducting substrate into an aqueous solution of a rigid rod polymer to deposit a coating of molecularly flat layers of the polymer on the substrate, 2) allowing the moisture level of the coated substrate to equilibrate with an enclosed atmosphere surrounding the tip and the coated substrate, 3) ascertaining that equilibration is achieved by monitoring pulsing conditions to determine when such conditions become constant, and 4) applying a voltage pulse to the coated substrate to form a nanometer scale structure.

Claim 18

An improved process for nanometer scale structure fabrication using a technique involving application of a voltage pulse between a sharp tip or stylus and a conducting or semiconducting substrate wherein the improvement comprises 1) dipping a conducting or semiconducting substrate into an aqueous solution of a rigid rod polymer to deposit a coating of molecularly flat layers of the polymer on the substrate, 2) allowing the moisture level of the coated substrate to equilibrate with an enclosed atmosphere surrounding the tip and the coated substrate, 3) ascertaining that equilibration is achieved by monitoring pulsing conditions to determine when such conditions become constant, and 4) applying a voltage pulse to the coated substrate to form a nanometer scale structure.

Claim 19

An improved process for nanometer scale structure fabrication using a technique involving application of a voltage pulse or current between a sharp tip or stylus and a conducting or semiconducting substrate wherein the improvement comprises 1) dipping a conducting or semiconducting substrate into a solution of a rigid rod polymer to deposit a coating of molecularly flat layers of the polymer on the substrate, and 2) applying an increased tunneling current compared to an imaging current to the coated substrate to form a nanoscale structure.

Claim 20

An improved process for nanometer scale structure fabrication using a technique involving application of a voltage pulse or current between a sharp tip or stylus and a conducting or semiconducting substrate wherein the improvement comprises 1) dipping a conducting or semiconducting substrate into a solution of a rigid rod polymer to deposit a coating of molecularly flat layers of the polymer on the substrate, and 2) applying an increased tunneling current compared to an imaging current to the coated substrate to form a nanoscale structure.

Claim 21

The process of claim 16 or 17 wherein the technique comprises scanning tunneling microscopy.

Claim 22

The process of claim 16 or 17 wherein the cellulose coating is less than about 100 nm in thickness.

Claim 23

The process of claim 16 or 17 wherein the substrate comprises graphite, gold, metallic glass, superconductors, magnetic media, metal chalcogenides, or phase change materials.

Claim 24

The process of claim 20 wherein the substrate comprises graphite.

Claim 25

The process of claim 16 or 17 wherein the polymeric coating comprises a water-soluble rigid rod polymer.

Claim 26

The process of claim 22 wherein the polymeric coating comprises hydroxypropylcellulose.

Claim 27

The process of claim 17 wherein the structure resides in the polymeric coating.

Claim 28

The process of claim 16 or 17 wherein the nanoscale structure has a diameter of less than about 30 nm.