US4785189A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for low-energy scanning electron beam lithography
Assignee: International Business Machines Corp
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Filing: 1988-02-19
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Granted: 1988-11-15
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Expires: 2008-02-19
Abstract
Abstract An electron sensitive surface is patternized treated to a high resolution pattern of low-energy electrons without any need to do focussing by emitting the low-energy electrons from a pointed electrode and positioning the apex of the pointed electron emitting source suitably close to the surface being treated.
Inventors
- 👤 Oliver C. Wells
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:59
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; B; B82; B82Y; B82Y10/00; B82Y40/00; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/31732; H01J2237/31733; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/855
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
141 words
A lithographic apparatus for exposure of an electron-sensitive resist layer by low energy electrons, said apparatus comprising: a workpiece spaced from a pointed electrode, an electron-sensitive resist layer having a thickness of at least about 10 nm located on said workpiece, said resist layer facing said pointed electrode, electron exposure means for providing low energy electrons to chemically modify selected areas of said resist layer to create a pattern of exposed regions therein, said electron means including: a pointed electrode the apex of which points towards said electron-sensitive resist layer, means for providing a flow of electrons having energies less than 1000 eV from said pointed electrode to said electron-sensitive resist layer, means for scanning said pointed electrode with respect to said workpiece, and means for positioning said pointed electrode a distance from said electron-sensitive resist layer not exceeding 1000 nm.
Claim 2
Dependent Claim
141 words
A lithographic apparatus for exposure of an electron-sensitive resist layer by low energy electrons, said apparatus comprising: a workpiece spaced from a pointed electrode, an electron-sensitive resist layer having a thickness of at least about 10 nm located on said workpiece, said resist layer facing said pointed electrode, electron exposure means for providing low energy electrons to chemically modify selected areas of said resist layer to create a pattern of exposed regions therein, said electron means including: a pointed electrode the apex of which points towards said electron-sensitive resist layer, means for providing a flow of electrons having energies less than 1000 eV from said pointed electrode to said electron-sensitive resist layer, means for scanning said pointed electrode with respect to said workpiece, and means for positioning said pointed electrode a distance from said electron-sensitive resist layer not exceeding 1000 nm.
Claim 3
Dependent Claim
24 words
Low-energy electron beam apparatus as defined in claim 1 wherein said workpiece is spaced from said electrode by a distance of about 1 nanometer.
Claim 4
Dependent Claim
26 words
Low-energy electron beam apparatus as defined in claim 1 wherein said electron exposure means comprises means for controlling said means for providing a flow of electrons.
Claim 5
Dependent Claim
27 words
Low-energy electron beam apparatus as defined in claim 1 wherein said electron exposure means comprises means for selectively reducing the flow of low-energy electrons to said workpiece.
Claim 6
Dependent Claim
35 words
Low-energy electron beam apparatus as defined in claim 4 wherein said means for selectively reducing the flow of low-energy electrons to said workpiece comprises means for selectively withdrawing said pointed electrode away from said workpiece.
Claim 7
Dependent Claim
46 words
Low-energy electron beam apparatus as defined in claim 4 wherein said electron exposure means comprises means for selectively reducing the voltage applied between said electrode and said resist layer during such times that the flow of low-energy electrons to said resist layer is to be reduced.
Claim 8
Dependent Claim
28 words
Low-energy electron beam apparatus as defined in claim 1 wherein said electron exposure means comprises means for selectively interrupting the flow of low-energy electrons to said resist layer.
Claim 9
Dependent Claim
45 words
Low-energy electron beam apparatus as defined in claim 7 wherein said means providing a flow of electrons comprises voltage source means electrically connected between said electrode and said resist layer except during such times that flow of low-energy electrons to said resist layer is interrupted.
Claim 10
Dependent Claim
24 words
Low-energy electron beam apparatus as defined in claim 1 wherein the separation between said poitned electrode and said resist layer is maintained substantially constant.
Claim 11
Dependent Claim
24 words
Low-energy beam apparatus as defined in claim 9 wherein said apparatus is feedback controlled during the time that flow of electrons is not interrupted.
References Cited (Backward Citations)
US4343993A
Cited
US4550257A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-15 | 1992-05-16 | 1992-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-15 | 1996-05-16 | 1996-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-15 | 2000-05-16 | 2000-11-15 | $7700.00 | Window Closed / Lapsed |