US6458701B1
Expired / Lapsed
US
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Method for forming metal layer of semiconductor device using metal halide gas
Assignee: Samsung Electronics Co Ltd
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Filing: 2000-10-12
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Granted: 2002-10-01
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Expires: 2020-10-12
Abstract
Abstract A method for forming a metal layer located over a metal underlayer of a semiconductor device, using a metal halogen gas. The method involves supplying a predetermined reaction gas into a reaction chamber for a predetermined period of time prior to deposition of the metal layer. The reaction gas has a higher reactivity with an active halogen element of a metal halogen gas supplied to form the metal layer, compared to a metal element of the metal halogen gas. As the metal halogen gas is supplied into the reaction chamber, the reaction gas reacts with the halogen radicals of the metal halogen gas, so that the metal underlayer is protected from being contaminated by impurities containing the halogen radicals.
Inventors
- 👤 Yun-sook Chae
- 👤 Sang-Bom Kang
- 👤 Gil-heyun Choi
- 👤 In-Sang Jeon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:02
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; C23C16/0209; C23C16/0218; C23C16/06; C23C16/08; C23C16/14; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
101 words
A method for forming a metal layer of a semiconductor device, comprising: forming a metal underlayer on a semiconductor substrate; supplying a reaction gas having a higher reactivity with an active halogen element of a metal halogen gas, then a metal component of the metal halogen gas, wherein supplying the reaction gas includes supplying an organic metal precursor containing triscyclopentadienyl lanthanum, trisisopropylcyclopentadienyl lanthanum triscyclopentadienyl praseodymium, trisisopropylcyclopentadienyl praseodymium, triscyclopentadienyl cerium, trisisopropylcyclopentadienyl cerium, triscyclopentadienyl neodymium, trisisopropylcyclopentadienyl neodymium, or diethyl beryllium, into a reaction chamber; and supplying the metal halogen gas into the reaction chamber to deposit the metal layer over the metal underlayer.
Claim 2
Independent Claim
101 words
A method for forming a metal layer of a semiconductor device, comprising: forming a metal underlayer on a semiconductor substrate; supplying a reaction gas having a higher reactivity with an active halogen element of a metal halogen gas, then a metal component of the metal halogen gas, wherein supplying the reaction gas includes supplying an organic metal precursor containing triscyclopentadienyl lanthanum, trisisopropylcyclopentadienyl lanthanum triscyclopentadienyl praseodymium, trisisopropylcyclopentadienyl praseodymium, triscyclopentadienyl cerium, trisisopropylcyclopentadienyl cerium, triscyclopentadienyl neodymium, trisisopropylcyclopentadienyl neodymium, or diethyl beryllium, into a reaction chamber; and supplying the metal halogen gas into the reaction chamber to deposit the metal layer over the metal underlayer.
Claim 3
Dependent Claim
23 words
The method of claim 1 , wherein supplying the reaction gas includes supplying an organic metal precursor containing triscyclopentadienyl praseodymium or trisisopropylcyclopentadienyl praseodymium.
Claim 4
Dependent Claim
37 words
The method of claim 2 , wherein supplying the metal halogen gas includes supplying the metal halogen gas to form a metal layer including a Ti layer, a TiN layer, a TiAlN layer or a TiSiN layer.
Claim 5
Dependent Claim
23 words
The method of claim 1 , wherein supplying the reaction gas includes supplying an organic metal precursor containing triscyclopentadienyl cerium or trisisopropylcyclopentadienyl cerium.
Claim 6
Dependent Claim
37 words
The method of claim 4 , wherein supplying the metal halogen gas includes supplying the metal halogen gas to form a metal layer including a Ti layer, a TiN layer, a TiAlN layer or a TiSiN layer.
Claim 7
Dependent Claim
23 words
The method of claim 1 , wherein supplying the reaction gas includes supplying an organic metal precursor containing triscyclopentadienyl neodymium or trisisopropylcyclopentadienyl neodymium.
Claim 8
Dependent Claim
37 words
The method of claim 6 , wherein supplying the metal halogen gas includes supplying the metal halogen gas to form a metal layer including a Ti layer, a TiN layer, a TiAlN layer or a TiSiN layer.
Claim 9
Dependent Claim
20 words
The method of claim 1 , wherein supplying the reaction gas includes supplying an organic metal precursor containing diethyl beryllium.
Claim 10
Dependent Claim
37 words
The method of claim 8 , wherein supplying the metal halogen gas includes supplying the metal halogen gas to form a metal layer including a Ti layer, a TiN layer, a TiAlN layer or a TiSiN layer.
Claim 11
Dependent Claim
37 words
The method of claim 1 , wherein supplying the metal halogen gas includes supplying the metal halogen gas to form a metal layer including a Ti layer, a TiN layer, a TiAlN layer or a TiSiN layer.
References Cited (Backward Citations)
US5393565A
Cited
US6284316B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-09-30 | 2006-04-01 | 2006-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-30 | 2010-04-01 | 2010-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-30 | 2014-04-01 | 2014-10-01 | $7700.00 | Window Closed / Lapsed |