US6821862B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using same

Assignee: Samsung Electronics Co Ltd

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Filing: 2001-06-27

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Granted: 2004-11-23

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Expires: 2021-06-27

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Abstract

Abstract Integrated circuit devices are manufactured by exposing at least a portion of an insulation layer that comprises oxygen to a metal precursor that is reactive with oxygen so as to form a metal oxide layer on the portion of the insulation layer. The metal oxide layer may reduce the diffusion of impurities, such as hydrogen, into the insulation layer, which may degrade the electrical characteristics of the insulation layer.

Inventors

👤 Hag-Ju Cho

Bibliographic Details

Application Number —

Jurisdiction US

Data Source google_patents

Last Synchronized 2026-11-09 01:01

CPC Classifications

H; H10; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/042; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69393; H10P14/69398

Claims Analysis

Total Claims: 13

Claim 1

Independent Claim 169 words

A method of manufacturing an integrated circuit device, comprising: forming an insulation layer that comprises oxygen between upper and lower conductive layers, the insulation layer having a first surface portion that is exposed by the upper and lower conductive layers and a second, non-exposed, surface portion at an interface with the upper conductive layer; and exposing the insulation layer to a metal precursor that is reactive with oxygen so as to selectively form a first metal oxide layer on substantially only the first surface portion of the insulation layer without forming the first metal oxide layer on the second surface portion of the insulation layer and without substantially forming the first metal oxide layer on the upper and lower conductive layers, such that the first metal oxide layer and the second surface portion of the insulation layer do not overlap, wherein exposing the insulation layer to the metal precursor comprises: pulsing the metal precursor over the integrated circuit device; and exposing the integrated circuit device to an inert gas.

Claim 2

Independent Claim 169 words

Claim 3

Dependent Claim 24 words

The method of claim 1 , further comprising: encapsulating the first metal oxide layer and the insulation layer in a second metal oxide layer.

Claim 4

Dependent Claim 33 words

The method of claim 1 , wherein pulsing the metal precursor is performed for a duration of about 0.1 to 2 seconds and at a flow rate of about 50 to 300 sccm.

Claim 5

Dependent Claim 38 words

The method of claim 1 , wherein exposing the integrated circuit device to an inert gas is performed for a duration of about 0.1 to 10 seconds and at a flow rate of about 50 to 300 sccm.

Claim 6

Dependent Claim 25 words

The method of claim 1 , wherein pulsing the metal precursor comprises: pulsing the metal precursor and a carrier gas over the integrated circuit device.

Claim 7

Dependent Claim 12 words

The method of claim 5 , wherein the carrier gas is argon.

Claim 8

Dependent Claim 33 words

The method of claim 1 , further comprising: thermally treating the integrated circuit device in an oxygen atmosphere using one of a rapid thermal processing apparatus and a furnace type thermal processing apparatus.

Claim 9

Dependent Claim 49 words

The method of claim 7 , wherein thermally treating the integrated circuit device comprises: thermally treating the integrated circuit device in the oxygen atmosphere using a rapid thermal processing apparatus at a temperature of about 400 to 600° C. for a duration of about 10 seconds to 10 minutes.

Claim 10

Dependent Claim 86 words

The method of claim 1 , wherein the metal precursor comprises a gas selected from the group of gases consisting of TriMethyl Aluminum (TMA), DiMethylAluminum Hydride (DMAJ-l). DiMethylEthylAniine Alane (DMEAA), TrilsoButylAluminum (TIBA), TnEthyl Aluminum (TEA), TaCl 5 , Ta(OC 2 H 5 ) 4 ,TiCl 4 , Ti(OC 2 H 5 ) 4 , ZrCl 4 , HfCl 4 , Nb(OC 2 H 5 ) 5 , Mg(thd) 2 , Ce(thd) 3 , and Y(thd) 3 , wherein thd is given by the following structural formula:

Claim 11

Dependent Claim 36 words

The method of claim 1 , wherein exposing the insulation layer to the metal precursor is performed at a temperature of about 100 to 400° C. and at a pressure of about 0.1 to 1 torr.

Claim 12

Dependent Claim 15 words

The method of claim 1 , wherein the insulation layer comprises a capacitor dielectric layer.

Claim 13

Dependent Claim 70 words

The method of claim 1 , wherein the insulation layer comprises a material selected from the group of materials consisting of: TiO 2 , SiO 2 , Ta 2 O 5 , Al 2 O 3 , BaTiO 3 , SrTiO 3 , (Ba, Sr)TiO 3 , Bi 4 Ti 3 O 12 , PbTiO 3 , PZT((Pb, La)(Zr, Ti)O 3 ), and (SrBi 2 Ta 2 O 9 )(SBT).

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USPTO Annuity & Maintenance Windows

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2007-11-23	2008-05-24	2008-11-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2011-11-23	2012-05-24	2012-11-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2015-11-23	2016-05-24	2016-11-23	$7700.00	Window Closed / Lapsed

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