US6200893B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radical-assisted sequential CVD
Assignee: Aixtron Inc
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Filing: 1999-03-11
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Granted: 2001-03-13
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Expires: 2019-03-11
Abstract
Abstract A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.
Inventors
- 👤 Ofer Sneh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:29
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/4554; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
207 words
A method for depositing a metal oxide on a substrate surface in a deposition chamber, comprising steps of: (a) depositing a monolayer of metal on the substrate surface by flowing a metal molecular precursor gas or vapor bearing the metal over a surface of the substrate, the surface saturated by a first reactive species with which the precursor will react by depositing the metal and forming reaction product, leaving a metal surface covered with ligands from the metal precursor and therefore not further reactive with the precursor; (b) terminating flow of the precursor gas or vapor; (c) purging the precursor with inert gas; (d) flowing a first radical species into the chamber and over the surface, the radical species highly reactive with the reaction product and combining with the reaction product to create volatile species and saturate the surface with the first radical species; (e) flowing radical oxygen into the chamber to combine with the metal monolayer deposited in step (a), forming an oxide of the metal; (f) flowing a third radical species into the chamber terminating the surface with the first reactive species in preparation for a next metal deposition step; and (g) repeating the steps in order until a composite film of desired thickness results.
Claim 2
Independent Claim
207 words
A method for depositing a metal oxide on a substrate surface in a deposition chamber, comprising steps of: (a) depositing a monolayer of metal on the substrate surface by flowing a metal molecular precursor gas or vapor bearing the metal over a surface of the substrate, the surface saturated by a first reactive species with which the precursor will react by depositing the metal and forming reaction product, leaving a metal surface covered with ligands from the metal precursor and therefore not further reactive with the precursor; (b) terminating flow of the precursor gas or vapor; (c) purging the precursor with inert gas; (d) flowing a first radical species into the chamber and over the surface, the radical species highly reactive with the reaction product and combining with the reaction product to create volatile species and saturate the surface with the first radical species; (e) flowing radical oxygen into the chamber to combine with the metal monolayer deposited in step (a), forming an oxide of the metal; (f) flowing a third radical species into the chamber terminating the surface with the first reactive species in preparation for a next metal deposition step; and (g) repeating the steps in order until a composite film of desired thickness results.
Claim 3
Dependent Claim
37 words
The method of claim 1 wherein the first and third radical species are both atomic hydrogen, and the metal surface in step (f) is terminated with hydroxyl species reactive with the metal precursor to deposit the metal.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein the oxygen and hydrogen atomic steps (e) and (f) are repeated to improve film quality.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein steps (e) and (f) are combined into one step wherein the surface is reacted with hydrogen and oxygen atoms simultaneously.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is tantalum pentachloride and the film is tantalum pentoxide.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the metal precursor is trimethylaluminum or aluminum trichloride and the film is aluminum oxide.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein the metal precursor is titanium tetrachloride or titanium tetraiodide and the film is titanium oxide.
Claim 9
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is niobium pentachloride and the film is niobium pentoxide.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is zirconium tetrachloride and the film is zirconium oxide.
Claim 11
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is hafnium tetrachloride and the film is hafnium oxide.
Claim 12
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is zinc dichloride and the film is zinc oxide.
Claim 13
Dependent Claim
21 words
The method of claim 1 wherein the metal precursor is molybdenum hexafluoride or molybdenum pentachloride and the film is molybdenum oxide.
Claim 14
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is manganese dichloride and the film is manganese oxide.
Claim 15
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is tin tetrachloride and the film is tin oxide.
Claim 16
Dependent Claim
20 words
The method of claim 1 wherein the metal precursor is indium trichloride or trimethylindium and the film is indium oxide.
Claim 17
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is tungsten hexafluoride and the film is tungsten oxide.
Claim 18
Dependent Claim
18 words
The method of claim 1 wherein the metal precursor is silicon tetrachloride and the film is silicon dioxide.
Claim 19
Dependent Claim
47 words
The method of claim 1 wherein the first radical species is atomic hydrogen and steps (e) and (f) are united to one step using OH radicals, and the metal surface in step (t) is terminated with hydroxyl species reactive with the metal precursor to deposit the metal.
Claim 20
Independent Claim
204 words
A method for depositing a metal nitride on a substrate surface in a deposition chamber, comprising steps of: (a) depositing a monolayer of metal on the substrate surface by flowing a metal precursor gas or vapor bearing the metal over a surface of the substrate, the surface saturated by a first reactive species with which the precursor will react by depositing the metal and forming reaction product, leaving a metal surface covered with ligands from the metal precursor and therefore not further reactive with the precursor; (b) terminating flow of the precursor gas or vapor; (c) purging the precursor with inert gas; (d) flowing a first radical species into the chamber and over the surface, the radical species highly reactive with the surface ligands of the metal precursor layer and eliminating the ligands as reaction product and also saturating the surface; (e) flowing radical nitrogen into the chamber to combine with the metal monolayer deposited in step (a), forming a nitride of the metal; (f) flowing a third radical species into the chamber terminating the surface with the first reactive species in preparation for a next metal deposition step; and (g) repeating the steps in order until a composite film of desired thickness results.
Claim 21
Independent Claim
204 words
A method for depositing a metal nitride on a substrate surface in a deposition chamber, comprising steps of: (a) depositing a monolayer of metal on the substrate surface by flowing a metal precursor gas or vapor bearing the metal over a surface of the substrate, the surface saturated by a first reactive species with which the precursor will react by depositing the metal and forming reaction product, leaving a metal surface covered with ligands from the metal precursor and therefore not further reactive with the precursor; (b) terminating flow of the precursor gas or vapor; (c) purging the precursor with inert gas; (d) flowing a first radical species into the chamber and over the surface, the radical species highly reactive with the surface ligands of the metal precursor layer and eliminating the ligands as reaction product and also saturating the surface; (e) flowing radical nitrogen into the chamber to combine with the metal monolayer deposited in step (a), forming a nitride of the metal; (f) flowing a third radical species into the chamber terminating the surface with the first reactive species in preparation for a next metal deposition step; and (g) repeating the steps in order until a composite film of desired thickness results.
Claim 22
Dependent Claim
38 words
The method of claim 19 wherein the first and third atomic radical species are both atomic hydrogen, and the metal surface in step (f) is terminated with amine species reactive with the metal precursor to deposit the metal.
Claim 23
Dependent Claim
26 words
The method of claim 20 wherein steps (e) and (f) are combined to one step wherein the surface is reacted with hydrogen and nitrogen atoms simultaneously.
Claim 24
Dependent Claim
18 words
The method of claim 19 wherein the metal precursor is tungsten hexafluoride and the film is tungsten nitride.
Claim 25
Dependent Claim
18 words
The method of claim 19 wherein the metal precursor is tantalum pentachloride and the film is tantalum nitride.
Claim 26
Dependent Claim
20 words
The method of claim 19 wherein the metal precursor is aluminum trichloride or trimethylaluminum and the film is aluminum nitride.
Claim 27
Dependent Claim
18 words
The method of claim 19 wherein the metal precursor is titanium tetrachloride and the film is titanium nitride.
Claim 28
Dependent Claim
20 words
The method of claim 19 wherein the metal precursor is silicon tetrachloride or dichlorosilane and the film is silicon nitride.
Claim 29
Dependent Claim
17 words
The method of claim 19 wherein the metal precursor is trimethylgallium and the film is gallium nitride.
Claim 30
Dependent Claim
54 words
The method of claim 19 wherein the first radical species are atomic hydrogen and steps (e) and (f) are united to one step using one or both of NH and NH 2 radicals, and the metal surface in step (f) is terminated with amine species reactive with the metal precursor to deposit the metal.
Claim 31
Dependent Claim
89 words
A process for building a metal, metal oxide, or metal nitride film on a substrate surface, wherein deposition steps comprising flowing a metal precursor gas or vapor over the surface with the surface terminated with a hydroxyl species reactive with the metal precursor to deposit the metal, are alternated with steps comprising flowing atomic radical hydrogen, oxygen and hydrogen again, thereby volatilizing products remaining from the metal deposition chemistry, oxidizing the metal monolayer, then terminating the metal surface with hydroxyl species again in preparation for a next deposition reaction.
Claim 32
Dependent Claim
89 words
A process for building a metal, metal oxide, or metal nitride film on a substrate surface, wherein deposition steps comprising flowing a metal precursor gas or vapor over the surface with the surface terminated with a hydroxyl species reactive with the metal precursor to deposit the metal, are alternated with steps comprising flowing atomic radical hydrogen, oxygen and hydrogen again, thereby volatilizing products remaining from the metal deposition chemistry, oxidizing the metal monolayer, then terminating the metal surface with hydroxyl species again in preparation for a next deposition reaction.
Claim 33
Independent Claim
209 words
A method for depositing a compound film on a substrate surface in a deposition chamber, comprising steps of: (a) depositing a monolayer of metal on the substrate surface by flowing a metal molecular precursor gas or vapor bearing the metal over a surface of the substrate, the surface saturated by a first reactive species with which the precursor will react by depositing the metal and forming reaction product, leaving a metal surface covered with ligands from the metal precursor and therefore not further reactive with the precursor; (b) terminating flow of the precursor gas or vapor; (c) purging the precursor with inert gas; (d) flowing a first radical species into the chamber and over the surface, the radical species highly reactive with the reaction product and combining with the reaction product to create volatile species and saturate the surface with the first radical species; (e) flowing nonmetal radical species into the chamber to combine with the metal monolayer deposited in step (a), forming a compound film of the metal; (f) flowing a third radical species into the chamber terminating the surface with the first reactive species in preparation for a next metal deposition step; and (g) repeating the steps in order until a composite film of desired thickness results.
Claim 34
Independent Claim
209 words
A method for depositing a compound film on a substrate surface in a deposition chamber, comprising steps of: (a) depositing a monolayer of metal on the substrate surface by flowing a metal molecular precursor gas or vapor bearing the metal over a surface of the substrate, the surface saturated by a first reactive species with which the precursor will react by depositing the metal and forming reaction product, leaving a metal surface covered with ligands from the metal precursor and therefore not further reactive with the precursor; (b) terminating flow of the precursor gas or vapor; (c) purging the precursor with inert gas; (d) flowing a first radical species into the chamber and over the surface, the radical species highly reactive with the reaction product and combining with the reaction product to create volatile species and saturate the surface with the first radical species; (e) flowing nonmetal radical species into the chamber to combine with the metal monolayer deposited in step (a), forming a compound film of the metal; (f) flowing a third radical species into the chamber terminating the surface with the first reactive species in preparation for a next metal deposition step; and (g) repeating the steps in order until a composite film of desired thickness results.
Claim 35
Dependent Claim
43 words
The method of claim 30 wherein the first and third radical species are both atomic hydrogen, and the metal surface in step (f) is terminated with hydride species of the nonmetallic element that are reactive with the metal precursor to deposit the metal.
Claim 36
Dependent Claim
22 words
The method of claim 30 wherein the non-metallic and hydrogen atomic steps (e) and (f) are repeated to improve the film quality.
Claim 37
Dependent Claim
26 words
The method of claim 30 wherein steps (e) and (f) are combined into one step wherein the surface is reacted with hydrogen and non-metallic atoms simultaneously.
Claim 38
Dependent Claim
27 words
The method of claim 30 wherein the metal precursor is molybdenum hexafluoride or molybdenum pentachloride, the non metallic element is sulfur and the film is molybdenum disulfide.
Claim 39
Dependent Claim
24 words
The method of claim 30 wherein the metal precursor is zinc dichloride, the non metallic element is sulfur and the film is zinc sulfide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-12 | 2004-09-11 | 2005-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-12 | 2008-09-11 | 2009-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-12 | 2012-09-11 | 2013-03-13 | $7700.00 | Window Closed / Lapsed |