US6015590A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for growing thin films
Assignee: ASM America Inc
•
Filing: 1995-11-28
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Granted: 2000-01-18
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Expires: 2015-11-28
Abstract
Abstract PCT No. PCT/FI95/00658 Sec. 371 Date Sep. 25, 1996 Sec. 102(e) Date Sep. 25, 1996 PCT Filed Nov. 28, 1995 PCT Pub. No. WO96/17107 PCT Pub. Date Jun. 6, 1996A method for growing a thin film on a substrate. A substrate is placed in a reaction space. The substrate is subjected to at least two vapor phase reactants in the form of vapor phase pulses, repeatedly and alternately. Gas within the reaction space is purged between two successive vapor phase pulses essentially entirely by use of a pump connected to the reaction space. The reaction space is purged between two successive vapor phase pulses such that less than 1% of the residual components from the first vapor phase pulse remains prior to the inflow of the second vapor phase pulse.
Inventors
- 👤 Tuomo Suntola
- 👤 Sven Lindfors
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:04
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45544; C23C16/45546; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/14
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
173 words
A method for growing a thin film onto a substrate, in which a substrate is placed in a reaction space and said substrate is subjected to alternately repeated surface reactions of a plurality of vapor phase reactants to form a thin film, said method comprising the steps of: feeding said vapor phase reactants into said reaction space in the form of vapor phase pulses repeatedly and alternately, each reactant separately from its own source; causing said vapor phase reactants to react with the surface of the substrate to form a thin film compound on said substrate; evacuating said reaction space between two successive vapor phase pulses by connecting the reaction space to a pump so that substantially all of said reactants remaining in said reaction space and adsorbed on inner walls of said reaction space are removed to a level of less than 1% prior to the inflow of a second pulse of said two successive vapor phase pulses; and feeding an inactive gas into said reaction space simultaneously with said evacuating step.
Claim 2
Independent Claim
173 words
A method for growing a thin film onto a substrate, in which a substrate is placed in a reaction space and said substrate is subjected to alternately repeated surface reactions of a plurality of vapor phase reactants to form a thin film, said method comprising the steps of: feeding said vapor phase reactants into said reaction space in the form of vapor phase pulses repeatedly and alternately, each reactant separately from its own source; causing said vapor phase reactants to react with the surface of the substrate to form a thin film compound on said substrate; evacuating said reaction space between two successive vapor phase pulses by connecting the reaction space to a pump so that substantially all of said reactants remaining in said reaction space and adsorbed on inner walls of said reaction space are removed to a level of less than 1% prior to the inflow of a second pulse of said two successive vapor phase pulses; and feeding an inactive gas into said reaction space simultaneously with said evacuating step.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein a gas volume of said reaction space is evacuated two to ten times between said two successive vapor phase pulses.
Claim 4
Dependent Claim
56 words
The method of claim 1, wherein said reaction space is evacuated so that substantially all of said reactants remaining in said reaction space and adsorbed on inner walls of said reaction space are removed to a level of less than 1%, prior to the inflow of a second pulse of said two successive vapor phase pulses.
Claim 5
Dependent Claim
37 words
The method of claim 1, wherein each of said vapor phase reactants is fed into said reaction space via a seperate inflow path in order to minimize the gas volume to be evacuated from said reaction space.
Claim 6
Dependent Claim
27 words
The method of claim 1, wherein each of said vapor phase pulses is mixed with said inactive gas flow prior to its entry into said reaction space.
Claim 7
Dependent Claim
98 words
The method of claim 1, wherein said reaction space comprises a reaction chamber into which said substrate is disposed, and gas flow channels communicated with said reaction chamber, said gas flow channels being suited for the inflow of said vapor phase pulses into said reaction chamber and, correspondingly, for the outflow of the nonreacted components of said vapor phase pulses from said reaction chamber, wherein at least a portion of said gas flow channels are provided with an oblong cross section, having a width greater than a height, in order to minimize the volume of said reaction space.
Claim 8
Dependent Claim
94 words
The method of claim 1 or 6, wherein said reaction space comprises a reaction chamber into which said substrate is disposed, and gas flow channels communicated with said reaction chamber, said gas flow channels being suited for the inflow of said vapor phase pulses into said reaction chamber and, correspondingly, for the outflow of the nonreacted components of said vapor phase pulses from said reaction chamber, wherein said reaction chamber is provided with an oblong cross section, having a width greater than a height in order to minimize the volume of said reaction space.
Claim 9
Dependent Claim
54 words
The method of claim 7, wherein said vapor phase pulses are fed via said gas flow channels having an oblong cross section, having a width greater than a height, in order to form planar pulses of vapor phase reactant and to improve the intermixing of the vapor-phase reactant flow with a carrier gas flow.
Claim 10
Dependent Claim
50 words
The method of claim 7, wherein said vapor phase pulses of each reactant group are fed via their individual inflow channels directly into said reaction chamber, wherein said vapor phase pulses are allowed to intermix with a carrier gas flow prior to bringing the reactant into contact with the substrate.
Claim 11
Dependent Claim
20 words
The method of claim 1, wherein said vapor phase pulses are fed in an laminar flow into said reaction chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-17 | 2003-07-19 | 2004-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-17 | 2007-07-19 | 2008-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-17 | 2011-07-19 | 2012-01-18 | $7700.00 | Window Closed / Lapsed |