US5429068A
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Deposition method for compound semiconductor forming device
Assignee: Fujitsu Ltd
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Filing: 1993-10-19
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Granted: 1995-07-04
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Expires: 2013-10-19
Abstract
Abstract A deposition method of a compound semiconductor forming a semiconductor device comprises the steps of; covering the surface of a compound semiconductor containing a V group element with a III group element with a thickness of one or more monolayers; and forming a second compound semiconductor containing a V group element different from said V group element on said III group element while utilizing said III group element as a protective film for preventing the desorption of said V group element.
Inventors
- 👤 Yoshiki Sakuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/102
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
72 words
A deposition method for forming a compound semiconductor device, comprising the steps of: forming a first crystal layer containing a first group V element; forming a protective layer, which is composed of at least one monolayer of a group III element, on said first crystal layer; and forming a second crystal layer on said protective layer using a gas containing a second group V element different from said first group V element.
Claim 2
Dependent Claim
72 words
A deposition method for forming a compound semiconductor device, comprising the steps of: forming a first crystal layer containing a first group V element; forming a protective layer, which is composed of at least one monolayer of a group III element, on said first crystal layer; and forming a second crystal layer on said protective layer using a gas containing a second group V element different from said first group V element.
Claim 3
Dependent Claim
37 words
A deposition method for a compound semiconductor forming a semiconductor device according to claim 1, wherein the deposition temperature extending from the deposition of said first crystal layer to the deposition of second crystal layer is varied.
Claim 4
Dependent Claim
35 words
The deposition method according to claim 1, wherein said protective layer contains an organic compound including a group III element when said protective layer is made from an organic material including said group III element.
Claim 5
Dependent Claim
17 words
The deposition method according to claim 1, wherein said group III element is In, Al, or Ga.
Claim 6
Dependent Claim
30 words
The deposition method according to claim 1, wherein said first crystal layer is an InP layer, said group III element is In, and said second group V element is As.
Claim 7
Dependent Claim
17 words
The deposition method according to claim 1, wherein said protective layer is formed by atomic layer epitaxy.
Claim 8
Dependent Claim
81 words
A deposition method for forming a compound semiconductor device, comprising the steps of: forming a first quantum barrier layer containing a first group V element; sequentially depositing a group III element with at least one monolayer and a second group V element with at least one monolayer by atomic layer epitaxy so as to form a quantum well on said first quantum barrier layer; and forming a second quantum barrier layer containing said first group V element on said quantum well.
Claim 9
Dependent Claim
81 words
A deposition method for forming a compound semiconductor device, comprising the steps of: forming a first quantum barrier layer containing a first group V element; sequentially depositing a group III element with at least one monolayer and a second group V element with at least one monolayer by atomic layer epitaxy so as to form a quantum well on said first quantum barrier layer; and forming a second quantum barrier layer containing said first group V element on said quantum well.
Claim 10
Dependent Claim
27 words
The deposition method according to claim 7, wherein said group III element is In, Al, or Ga and said second group V element is As or P.
Claim 11
Dependent Claim
40 words
The deposition method according to claim 7, wherein said first quantum barrier layer is an InP layer, said group III element is In, said second group V element is As, and said second quantum barrier layer is an InP layer.
Claim 12
Dependent Claim
28 words
The deposition method according to claim 7, wherein said step for sequentially deposition a group III element and a second group V element is repeated at least twice.
References Cited (Backward Citations)
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