US4421786A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition reactor for silicon epitaxial processes
Assignee: AT&T Inc
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Filing: 1982-06-01
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Granted: 1983-12-20
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Expires: 2002-06-01
Abstract
Abstract A chemical vapor deposition reactor (40) is disclosed. The reactor (40) has a vertically mounted tube (43), axially disposed within a chamber (41). A plurality of spaced, planar, wafer holders (44--44), having resistance heated portions (45--45) thereon, are fixedly mounted to and radially extend from the tube (43). Silicon wafers (13--13) are placed on the resistance heated portions of the holders (44--44) and reactant gases are caused to radially flow through apertures (91--91) in the tube (43), between adjacent heated holders (44--44) and across the surface of the wafers (13--13) to deposit doped silicon thereon. Undeposited reactants and gases are removed via an axisymmetric exhaust port 81.
Inventors
- 👤 Roop L. Mahajan
- 👤 Joseph R. Ristorcelli, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:03
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/12; C30B25/14; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
114 words
A method of depositing a thin film of a material on a plurality of semiconductor wafers, comprising the steps of: placing the wafers on resistance heated portions on each of a plurality of vertically spaced, parallel, planar wafer holders, said heated portions being vertically aligned and the holders having a centrally disposed, perforated, tube passing therethrough; directing a gaseous reactant material through the perforated tube, radially outward, between the wafer holders; maintaining an individually controlled, forced convective flow of the gaseous reactants across each holder and the wafers thereon; and activating the resistance heated portions to conductively and radiatively heat the wafers on each holder to deposit a thin film of reactant material thereon.
Claim 2
Independent Claim
114 words
A method of depositing a thin film of a material on a plurality of semiconductor wafers, comprising the steps of: placing the wafers on resistance heated portions on each of a plurality of vertically spaced, parallel, planar wafer holders, said heated portions being vertically aligned and the holders having a centrally disposed, perforated, tube passing therethrough; directing a gaseous reactant material through the perforated tube, radially outward, between the wafer holders; maintaining an individually controlled, forced convective flow of the gaseous reactants across each holder and the wafers thereon; and activating the resistance heated portions to conductively and radiatively heat the wafers on each holder to deposit a thin film of reactant material thereon.
Claim 3
Dependent Claim
24 words
The method as set forth in claim 1, characterized by: maintaining the wafer holders and the perforated tube stationary during deposition of the reactants.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-19 | 1987-06-20 | 1987-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-19 | 1991-06-20 | 1991-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-19 | 1995-06-20 | 1995-12-20 | $7700.00 | Window Closed / Lapsed |