US6652924B2
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US
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Sequential chemical vapor deposition
Assignee: ASM International NV
•
Filing: 2001-05-24
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Granted: 2003-11-25
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Expires: 2021-05-24
Abstract
Abstract The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.
Inventors
- 👤 Arthur Sherman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:58
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/448; C23C16/452; C23C16/45529; C23C16/45536; C23C16/4554; C23C16/45542; C23C16/45544; C23C16/50; C30; C30B; C30B25/00; C30B25/02; C30B25/14
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
108 words
A process of growing a thin film by a sequential vapor deposition process, comprising the steps of: placing a part in a chamber; removing gases from the chamber; exposing the part to a gaseous first reactant, including an element of the thin film to be formed, wherein the first reactant adsorbs on the part in a self-limiting manner; removing gases from the chamber; exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to one or more elements, wherein a conductive or insulating thin film is formed; and removing gases from the chamber.
Claim 2
Dependent Claim
108 words
A process of growing a thin film by a sequential vapor deposition process, comprising the steps of: placing a part in a chamber; removing gases from the chamber; exposing the part to a gaseous first reactant, including an element of the thin film to be formed, wherein the first reactant adsorbs on the part in a self-limiting manner; removing gases from the chamber; exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to one or more elements, wherein a conductive or insulating thin film is formed; and removing gases from the chamber.
Claim 3
Dependent Claim
23 words
The process of claim 1 , wherein the parts to be coated are maintained at temperatures up to 500° C. in the chamber.
Claim 4
Dependent Claim
14 words
The process of claim 1 , wherein the first reactant includes a halogen atom.
Claim 5
Dependent Claim
19 words
The process of claim 1 , wherein the first reactant is a metal-organic molecule including an elemental metal species.
Claim 6
Dependent Claim
34 words
The process of claim 1 , wherein the radicals of the second reactant are selected from the group consisting of oxygen atoms, nitrogen atoms, hydrogen atoms, OH molecules, NH molecules or a combination thereof.
Claim 7
Dependent Claim
24 words
The process of claim 1 , wherein the radicals of the second reactant are rated in a radical generator in communication with the chamber.
Claim 8
Dependent Claim
35 words
The process of claim 1 , where in the radicals of the second reactant are generated by surrounding the chamber with an RF excitation coil, wherein the thin film being formed is a dielectric material.
Claim 9
Dependent Claim
31 words
The process of claim 1 , wherein the first reactant is tetraethoxysilane and the second reactant is atomic oxygen which converts the first reactant to a thin film of silicon dioxide.
Claim 10
Dependent Claim
31 words
The process of claim 1 , wherein the first reactant is titanium tetrachloride and the second reactant is atomic hydrogen which converts the first reactant to a thin film of titanium.
Claim 11
Dependent Claim
37 words
The process of claim 1 , wherein the first reactant is a titanium organometallic compound and the second reactant is hydrogen atoms or HN molecules which convert the first reactant to a thin film of titanium nitride.
Claim 12
Dependent Claim
32 words
The process of claim 1 , wherein the first reactant is an aluminum compound and the second reactant is atomic hydrogen which converts the first reactant to a thin film of aluminum.
Claim 13
Dependent Claim
32 words
The process of claim 1 , wherein the first reactant is a copper compound and the second reactant is atomic hydrogen which converts the first reactant to a thin film of copper.
Claim 14
Dependent Claim
100 words
A process of growing a thin film by a vapor deposition process, comprising the steps of: placing a part in a chamber; and a plurality of cycles, each cycle comprising: exposing the part to a gaseous first reactant, containing a metal element, wherein the first reactant adsorbs on the part in a self-limiting manner; removing excess first reactant gases from the chamber; exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to the metal element; and removing excess second reactant gases from the chamber.
Claim 15
Dependent Claim
100 words
A process of growing a thin film by a vapor deposition process, comprising the steps of: placing a part in a chamber; and a plurality of cycles, each cycle comprising: exposing the part to a gaseous first reactant, containing a metal element, wherein the first reactant adsorbs on the part in a self-limiting manner; removing excess first reactant gases from the chamber; exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to the metal element; and removing excess second reactant gases from the chamber.
Claim 16
Dependent Claim
45 words
The process of claim 13 , wherein the first reactant is a metal selected from a group consisting of aluminum, copper, tantalum, titanium, and tungsten, and the second reactant is a radical selected from a group consisting of hydrogen, nitrogen, oxygen, or a combination thereof.
Claim 17
Dependent Claim
136 words
A process of growing a thin film by a repetitive vapor deposition process, which comprises: placing a part in a chamber; and a plurality of cycles, each cycle comprising: exposing the part to a gaseous first reactant including an element selected from the group consisting of Si and Ge, wherein a portion of the first reactant adsorbs on the part in a self-limiting manner; removing gases from the chamber; exposing the part, coated with the portion of the first reactant, to a gaseous second reactant of radicals selected from the group consisting of O and N, wherein the radicals convert the portion of the first reactant on the part to a thin film selected from the group consisting of silicon nitride, silicon oxide, germanium nitride, germanium oxide; and removing excess second reactant gases from the chamber.
Claim 18
Dependent Claim
136 words
A process of growing a thin film by a repetitive vapor deposition process, which comprises: placing a part in a chamber; and a plurality of cycles, each cycle comprising: exposing the part to a gaseous first reactant including an element selected from the group consisting of Si and Ge, wherein a portion of the first reactant adsorbs on the part in a self-limiting manner; removing gases from the chamber; exposing the part, coated with the portion of the first reactant, to a gaseous second reactant of radicals selected from the group consisting of O and N, wherein the radicals convert the portion of the first reactant on the part to a thin film selected from the group consisting of silicon nitride, silicon oxide, germanium nitride, germanium oxide; and removing excess second reactant gases from the chamber.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-11-24 | 2007-05-26 | 2007-11-25 | $2000.00 | Window Closed / Lapsed |
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