EP0442490A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for producing single crystal boron nitride film
Assignee: Sumitomo Electric Industries Ltd
•
Filing: 1991-02-14
•
Granted: —
•
Expires: 2011-02-14
Abstract
Abstract A single crystal cubic boron nitride film is pepared by alternately supplying a raw material gas comprising boron atoms (TB2H6) and a raw material gas comprising nitrogen atoms (T NH3 in a vacuum chamber to form a cubic boron nitride film on a heated substrate and evacuating the vacuum chamber (T vac1 -T vac4 ) and optionally purging the vacuum chamber with a gas (T H2 ) which is inactive with the raw materials when one raw material gas is switched to the other to prevent coexistence of the both raw materials in the vacuum chamber.
Inventors
- 👤 Tunenobu C/O Itami Works Of Sumitomo Kimoto
- 👤 C/O Itami Works Of Sumitomo Tomikawa Tadashi
- 👤 Nobuhiko C/O Itami Works Of Sumitomo Fujita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:34
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/342; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/45536; C23C16/45542; C30B25/00; C30B25/02; C30B25/14
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
69 words
A method for producing a cubic boron nitride film comprising alternately supplying a raw material gas comprising boron atoms and a raw material gas comprising nitrogen atoms in a vacuum chamber to form a cubic boron nitride film on a heated substrate and evacuating the vacuum chamber when one raw material gas is switched to the other to prevent coexistence of the both raw materials in the vacuum chamber.
Claim 2
Dependent Claim
17 words
The method according to claim 1, wherein a temperature of the substrate is from 300 to 1400°C.
Claim 3
Dependent Claim
28 words
The method according to claim 1, wherein the raw material comprising the boron atoms is selected from the group consisting, of B₂H₆, BF₃, BCl₃, BBr₃, B(CH₃)₃ and B(C₂H₅)₃.
Claim 4
Dependent Claim
24 words
The method according to claim 1, wherein the raw material comprising the nitrogen atoms is selected from the group consistingof NH₃, N₂ and NF₃.
Claim 5
Independent Claim
84 words
A method for producing a cubic boron nitride film comprising alternately supplying a raw material gas comprising boron atoms and a raw material gas comprising nitrogen atoms in a vacuum chamber to form a cubic boron nitride film on a heated substrate and evacuating the vacuum chamber and purging the vacuum chamber with a gas which is inactive with the raw materials when one raw material gas is switched to the other to prevent coexistence of the both raw materials in the vacuum chamber.
Claim 6
Dependent Claim
17 words
The method according to claim 5, wherein a temperature of the substrate is from 300 to 1400°C.
Claim 7
Dependent Claim
28 words
The method according to claim 5, wherein the raw material comprising the boron atoms is selected from the group consisting of B₂H₆, BF₃, BCl₃, BBr₃, B(CH₃)₃ and B(C₂H₅)₃.
Claim 8
Dependent Claim
24 words
The method according to claim 5, wherein the raw material comprising the nitrogen atoms is selected from the group consistingof NH₃, N₂ and NF₃.
Claim 9
Dependent Claim
14 words
The method according to claim 5, wherein a purging gas is hydrogen or argon.
References Cited (Backward Citations)
US3561920A
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.