US6104074A
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Schottky barrier detectors for visible-blind ultraviolet detection
Assignee: APA Enterprises Inc
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Filing: 1998-12-08
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Granted: 2000-08-15
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Expires: 2018-12-08
Abstract
Abstract The invention concerns the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n - /n + -GaN and AlGaN structures grown over sapphire substrates. Mesa geometry devices of different active areas were fabricated and characterized for spectral responsitivity, speed and noise characteristics. The invention also concerns the fabrication and characterization of an 8×8 Schottky barrier photodiode array on GaN with a pixel size of 200 μm by 200 μm.
Inventors
- 👤 Qisheng Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
85 words
A vertical geometry transparent Schottky barrier detector capable of detecting electromagnetic radiation in the range of 200 to 350 nm, said detector comprising several layers grown over basal plane sapphire substrates; said layers sequentially comprising: a) a buffer layer comprising AlN; b) a n + doped layer comprising Al x Ga 1-x N; c) a n - doped active layer comprising Al x Ga 1-x N; and, d) a Schottky layer comprising paladium; said detector further comprising ohmic contacts formed on the bottom doped layer.
Claim 2
Dependent Claim
85 words
A vertical geometry transparent Schottky barrier detector capable of detecting electromagnetic radiation in the range of 200 to 350 nm, said detector comprising several layers grown over basal plane sapphire substrates; said layers sequentially comprising: a) a buffer layer comprising AlN; b) a n + doped layer comprising Al x Ga 1-x N; c) a n - doped active layer comprising Al x Ga 1-x N; and, d) a Schottky layer comprising paladium; said detector further comprising ohmic contacts formed on the bottom doped layer.
Claim 3
Dependent Claim
14 words
The detector of claim 1 wherein the buffer layer is about 40 nm thick.
Claim 4
Dependent Claim
23 words
The detector of claim 1 wherein the n + doped Al x Ga 1-x N layer is about 0.5 to 1.5 μm thick.
Claim 5
Dependent Claim
21 words
The detector of claim 1 wherein the n + doped Al x Ga 1-x N layer is about 1.2 μm thick.
Claim 6
Dependent Claim
32 words
The detector of claim 1 wherein the n + doped Al x Ga 1-x N layer is doped with Si and has a doping level of about 3×10 18 cm -3 .
Claim 7
Dependent Claim
22 words
The detector of claim 1 wherein the n - doped Al x Ga 1-x N is about 0.3 to 1.5 μm thick.
Claim 8
Dependent Claim
21 words
The detector of claim 1 wherein the n - doped Al x Ga 1-x N layer is about 0.7 μm thick.
Claim 9
Dependent Claim
35 words
The detector of claim 1 wherein the n - doped Al x Ga 1-x N layer is doped with Si and has a doping level of about 3×10 16 to 1×10 17 cm -3 .
Claim 10
Dependent Claim
17 words
The detector of claim 1 wherein the ohmic contacts are about 215 nm thick and comprise Ti/Al.
Claim 11
Dependent Claim
14 words
The detector of claim 1 wherein the palladium level is about 3.5 nm thick.
Claim 12
Dependent Claim
78 words
An array of mesa type transparent Schottky barrier detectors suitable for visible-blind imaging; said detectors comprising several layers grown over basal plane sapphire substrates; said layers sequentially comprising: a) a buffer layer comprising AlN; b) a n + doped layer comprising Al x Ga 1-x N; c) a n - doped active layer comprising Al x Ga 1-x N; and, d) a Schottky layer comprising palladium; said detectors further comprising ohmic contacts formed on each bottom doped layer.
Claim 13
Dependent Claim
78 words
An array of mesa type transparent Schottky barrier detectors suitable for visible-blind imaging; said detectors comprising several layers grown over basal plane sapphire substrates; said layers sequentially comprising: a) a buffer layer comprising AlN; b) a n + doped layer comprising Al x Ga 1-x N; c) a n - doped active layer comprising Al x Ga 1-x N; and, d) a Schottky layer comprising palladium; said detectors further comprising ohmic contacts formed on each bottom doped layer.
Claim 14
Dependent Claim
14 words
The array of claim 11 wherein each buffer layer is about 40 nm thick.
Claim 15
Dependent Claim
23 words
The array of claim 11 wherein each n + doped Al x Ga 1-x N layer is about 0.5 to 1.5 μm thick.
Claim 16
Dependent Claim
21 words
The array of claim 11 wherein each n + doped Al x Ga 1-x N layer is about 1.2 μm thick.
Claim 17
Dependent Claim
32 words
The array of claim 11 wherein each n + doped Al x Ga 1-x N layer is doped with Si and has a doping level of about 3×10 18 cm -3 .
Claim 18
Dependent Claim
23 words
The array of claim 11 wherein each n - doped Al x Ga 1-x N layer is about 0.3 to 1.5 μm thick.
Claim 19
Dependent Claim
21 words
The array of claim 11 wherein each n - doped Al x Ga 1-x N layer is about 0.7 μm thick.
Claim 20
Dependent Claim
35 words
The array of claim 11 wherein each n - doped Al x Ga 1-x N layer is doped with Si and has a doping level of about 3×10 16 to 1×10 17 cm -3 .
Claim 21
Dependent Claim
16 words
The array of claim 11 wherein the ohmic contacts are 215 nm thick and comprise Ti/Al.
Claim 22
Dependent Claim
14 words
The array of claim 11 wherein each palladium level is about 3.5 nm thick.
References Cited (Backward Citations)
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