US5912797A
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Dielectric materials of amorphous compositions and devices employing same
Assignee: Nokia of America Corp
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Filing: 1997-09-24
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Granted: 1999-06-15
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Expires: 2017-09-24
Abstract
Abstract A thin dielectric film that uses an amorphous composition of R--Sn--Ti--O as the main component is disclosed, wherein R is Zr or Hf, having particular application for use in a capacitor of a DRAM cell. The preferable range of the dielectric thin film composition is centered around Zr x Sn y Ti z O w , where 0.1≦x≦1.8; 0.1≦y≦1.6; 0.2≦z≦1.9; and 2.0≦w≦4.0; and x+y+z=2. Preferably, x is about 0.2, y is about 0.2, and z is about 0.6. Doping of the composition with nitrogen is further disclosed as improving the dielectric properties and uniformity of the film.
Inventors
- 👤 Lynn Frances Schneemeyer
- 👤 Robert Bruce van Dover
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69397; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/69392; H10P14/69394; H10P14/69395
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
46 words
A dielectric film comprising an amorphous composition of R x Sn y Ti z O w as the main component, wherein R is selected from zirconium (Zr) and hafnium (Hf) and x, y, z, and w are approximately 0.1≦x≦1.8; 0.1≦y≦1.6; 0.2≦z≦1.9; and 2.0≦w≦4.0; and wherein x+y+z=2.
Claim 2
Dependent Claim
46 words
A dielectric film comprising an amorphous composition of R x Sn y Ti z O w as the main component, wherein R is selected from zirconium (Zr) and hafnium (Hf) and x, y, z, and w are approximately 0.1≦x≦1.8; 0.1≦y≦1.6; 0.2≦z≦1.9; and 2.0≦w≦4.0; and wherein x+y+z=2.
Claim 3
Dependent Claim
21 words
The dielectric film of claim 1, in which x is approximately 0.3, y is approximately 0.9, and z is approximately 0.8.
Claim 4
Dependent Claim
21 words
The dielectric film of claim 1, in which x is approximately 0.4, y is approximately 0.4, and z is approximately 1.2.
Claim 5
Dependent Claim
34 words
The dielectric film of claim 1, in which the dielectric constant ε of the composition measured at 10 kHz is greater than 60 when deposited on a substrate held at about 200 degrees Centigrade.
Claim 6
Dependent Claim
31 words
A dielectric film comprising an amorphous composition of R--Sn--Ti--O as the main component, wherein R is selected from zirconium (Zr) and hafnium (Hf) and the amorphous composition is doped with nitrogen.
Claim 7
Dependent Claim
31 words
A dielectric film comprising an amorphous composition of R--Sn--Ti--O as the main component, wherein R is selected from zirconium (Zr) and hafnium (Hf) and the amorphous composition is doped with nitrogen.
Claim 8
Dependent Claim
40 words
The dielectric film of claim 5, in which the composition comprises R x Sn y Ti z O w ,N v in which x, y, z, w and v are approximately 0.1≦x≦1.8; 0.1≦y≦1.6; 0.2≦z≦1.9; 2.0≦w≦4.0; and 0.01≦v≦0.03; and wherein x+y+z=2.
Claim 9
Dependent Claim
21 words
The dielectric film of claim 6, in which x is approximately 0.4, y is approximately 0.4, and z is approximately 1.2.
Claim 10
Dependent Claim
74 words
A capacitor comprising a pair of electrodes and disposed between the electrodes, a layer of dielectric material having a dielectric constant, the material comprising an amorphous composition of R--Sn--Ti--O as the main component, wherein R is selected from the group consisting of zirconium and hafnium and the amorphous composition has a dielectric constant (ε) measured at 10 kHz of at least about 55 when deposited on a substrate held at about 200 degrees Centigrade.
Claim 11
Dependent Claim
74 words
A capacitor comprising a pair of electrodes and disposed between the electrodes, a layer of dielectric material having a dielectric constant, the material comprising an amorphous composition of R--Sn--Ti--O as the main component, wherein R is selected from the group consisting of zirconium and hafnium and the amorphous composition has a dielectric constant (ε) measured at 10 kHz of at least about 55 when deposited on a substrate held at about 200 degrees Centigrade.
Claim 12
Dependent Claim
39 words
The capacitor of claim 8, in which the amorphous composition comprises R x Sn y Ti z O w as the main component, wherein x, y, z and w are approximately 0.1≦x≦1.8; 0.1≦y≦1.6; 0.2≦z≦1.9; and 2.0≦w≦4.0; and wherein x+y+z=2.
Claim 13
Dependent Claim
15 words
The capacitor of claim 9, in which the amorphous composition is further doped with nitrogen.
Claim 14
Dependent Claim
63 words
A dielectric film comprising an amorphous composition, the composition having a dielectric constant (ε) and a figure of merit (FOM), the FOM being defined by the dielectric constant (ε) of the composition multiplied by its breakdown field, in which the dielectric constant of the composition measured at 10 kHz is greater than 30 and the FOM is greater than 3.0 μC/cm 2 .
Claim 15
Dependent Claim
63 words
A dielectric film comprising an amorphous composition, the composition having a dielectric constant (ε) and a figure of merit (FOM), the FOM being defined by the dielectric constant (ε) of the composition multiplied by its breakdown field, in which the dielectric constant of the composition measured at 10 kHz is greater than 30 and the FOM is greater than 3.0 μC/cm 2 .
Claim 16
Dependent Claim
47 words
A dielectric film comprising an amorphous composition of R x Sn y Ti z O w N v as the main component, wherein R is selected from zirconium (Zr) and hafnium (Hf), and x, y, z, w, and v are approximately 0.1≦x≦1.8; 0.1≦y≦1.6; 0.2≦z≦1.9, 2.0≦w≦4.0; and 0.10≦v≦0.03.
Claim 17
Dependent Claim
47 words
A dielectric film comprising an amorphous composition of R x Sn y Ti z O w N v as the main component, wherein R is selected from zirconium (Zr) and hafnium (Hf), and x, y, z, w, and v are approximately 0.1≦x≦1.8; 0.1≦y≦1.6; 0.2≦z≦1.9, 2.0≦w≦4.0; and 0.10≦v≦0.03.
References Cited (Backward Citations)
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