Patent EP0259192A2 successfully refreshed from Google Patents.
US7196007B2
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US
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Systems and methods of forming refractory metal nitride layers using disilazanes
Assignee: Micron Technology Inc
•
Filing: 2004-08-30
•
Granted: 2007-03-27
•
Expires: 2024-08-30
Abstract
Abstract A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/22; C23C16/30; C23C16/34; C23C16/45553; H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; H10D1/682
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
96 words
A vapor deposition apparatus comprising: a vapor deposition chamber having a substrate positioned therein; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 2
Dependent Claim
96 words
A vapor deposition apparatus comprising: a vapor deposition chamber having a substrate positioned therein; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 3
Dependent Claim
38 words
The apparatus of claim 1 further comprising one or more vessels comprising one or more silicon precursor compounds and optionally one or more vessels comprising one or more reaction gases other than the disilazanes and silicon precursor compounds.
Claim 4
Dependent Claim
16 words
The apparatus of claim 1 wherein the vapor deposition chamber is a chemical vapor deposition chamber.
Claim 5
Dependent Claim
17 words
The apparatus of claim 1 wherein the vapor deposition chamber is an atomic layer vapor deposition chamber.
Claim 6
Dependent Claim
12 words
The apparatus of claim 1 wherein the substrate comprises a semiconductor substrate.
Claim 7
Dependent Claim
12 words
The apparatus of claim 1 wherein the substrate comprises a silicon-containing surface.
Claim 8
Dependent Claim
12 words
The apparatus of claim 1 wherein the substrate comprises a silicon wafer.
Claim 9
Dependent Claim
21 words
The apparatus of claim 1 wherein Y is independently selected from the group consisting of F, Cl, I, and combinations thereof.
Claim 10
Dependent Claim
12 words
The apparatus of claim 1 wherein each Y is a fluorine atom.
Claim 11
Dependent Claim
20 words
The apparatus of claim 1 wherein M is selected from the group consisting of Ti, Nb, Ta, Mo, and W.
Claim 12
Dependent Claim
13 words
The apparatus of claim 1 wherein M is tantalum and n is 5.
Claim 13
Dependent Claim
20 words
The apparatus of claim 1 wherein each R is independently selected from the group consisting of a (C1–C6) organic group.
Claim 14
Dependent Claim
13 words
The apparatus of claim 12 wherein each R is independently ethyl or methyl.
Claim 15
Dependent Claim
22 words
The apparatus of claim 13 wherein the disilazane is tetramethyldisilazane (TMDS), (CH 3 ) 2 HSiNHSiH(CH 3 ) 2 , or hexamethyldisilazane.
Claim 16
Dependent Claim
10 words
The apparatus of claim 14 wherein the disilazane is tetramethyldisilazane.
Claim 17
Dependent Claim
17 words
The apparatus of claim 1 with the proviso that the one or more disilazanes are not hexamethyldisilazane.
Claim 18
Dependent Claim
55 words
The apparatus of claim 2 wherein the one or more silicon precursor compounds comprises silane (SiH 4 ), disilane (Si 2 H 6 ), halogenated silanes, and organic silanes of the formula SiH p R 1 q wherein p=1–4, q=4-p, and each R 1 is independently an organic group having up to six carbon atoms.
Claim 19
Dependent Claim
20 words
The apparatus of claim 17 wherein each R 1 is independently an organic group having up to two carbon atoms.
Claim 20
Dependent Claim
14 words
The apparatus of claim 17 wherein each R 1 is independently an organic moiety.
Claim 21
Dependent Claim
47 words
The apparatus of claim 2 wherein the one or more silicon precursor compounds is selected from the group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), and trimethylsilane (SiH(CH 3 ) 3 ).
Claim 22
Dependent Claim
40 words
The apparatus of claim 20 wherein the one or more reaction gases other than the nitrogen and silicon precursor compounds comprises NH 3 , N 2 H 4 , B 2 H 6 , PH 3 , and combinations thereof.
Claim 23
Dependent Claim
23 words
The apparatus of claim 21 further comprising an inert carrier gas selected from the group consisting of nitrogen, helium, argon, and mixtures thereof.
Claim 24
Dependent Claim
91 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 25
Dependent Claim
91 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 26
Dependent Claim
38 words
The apparatus of claim 23 further comprising one or more vessels comprising one or more silicon precursor compounds and optionally one or more vessels comprising one or more reaction gases other than the disilazanes and silicon precursor compounds.
Claim 27
Dependent Claim
16 words
The apparatus of claim 23 wherein the vapor deposition chamber is a chemical vapor deposition chamber.
Claim 28
Dependent Claim
17 words
The apparatus of claim 23 wherein the vapor deposition chamber is an atomic layer vapor deposition chamber.
Claim 29
Dependent Claim
99 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that M is not titanium; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 30
Dependent Claim
99 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that M is not titanium; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 31
Dependent Claim
15 words
The apparatus of claim 27 with the proviso that Y is not a chlorine atom.
Claim 32
Dependent Claim
101 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that Y is not a chlorine atom; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 33
Dependent Claim
101 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M, with the proviso that Y is not a chlorine atom; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3.
Claim 34
Dependent Claim
103 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3, with the proviso that the one or more disilazanes are not hexamethyldisilazane.
Claim 35
Dependent Claim
103 words
A vapor deposition apparatus comprising: a vapor deposition chamber; one or more vessels comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; and one or more vessels comprising one or more disilazanes of the formula (R) x H 3−x SiNHSi(R) x H 3−x , wherein each R is independently an organic group, and x is 1 to 3, with the proviso that the one or more disilazanes are not hexamethyldisilazane.
Claim 36
Dependent Claim
13 words
The apparatus of claim 30 with the proviso that M is not titanium.
Claim 37
Dependent Claim
15 words
The apparatus of claim 30 with the proviso that Y is not a chlorine atom.
Claim 38
Dependent Claim
13 words
The apparatus of claim 32 with the proviso that M is not titanium.
References Cited (Backward Citations)
US4766006A
Cited
JPS63109172A
Cited
JPH03183776A
Cited
EP0442704A2
Cited
US5087593A
Cited
US5256244A
Cited
US5350719A
Cited
US5453527A
Cited
US5742322A
Cited
US5576579A
Cited
US5919522A
Cited
US5997949A
Cited
US5908947A
Cited
US5981331A
Cited
US6143081A
Cited
US5849071A
Cited
US5916634A
Cited
US6117692A
Cited
US6461982B2
Cited
US6153519A
Cited
US6287965B1
Cited
US6277436B1
Cited
US6174809B1
Cited
US6015917A
Cited
US6348412B1
Cited
US6683381B2
Cited
US6351036B1
Cited
US6884466B2
Cited
US20030198587A1
Cited
US6387764B1
Cited
US6273951B1
Cited
US6391785B1
Cited
US6511539B1
Cited
US6203613B1
Cited
US20030188682A1
Cited
WO2001040541A1
Cited
US6590251B2
Cited
US6479364B2
Cited
US6335049B1
Cited
US6271094B1
Cited
US6534395B2
Cited
US6703708B2
Cited
US6342445B1
Cited
US6585823B1
Cited
US6527855B2
Cited
EP1205574A2
Cited
US20020086111A1
Cited
US6706115B2
Cited
US20030190423A1
Cited
US6846516B2
Cited
US20030211736A1
Cited
US20050287804A1
Cited
US6794284B2
Cited
US6730164B2
Cited
US20050032360A1
Cited
US20040043600A1
Cited
US6967159B2
Cited
US20040043151A1
Cited
US6995081B2
Cited
US20060048711A1
Cited
US7122464B2
Cited
US20040096582A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2010-03-26 | 2010-09-25 | 2011-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2014-03-26 | 2014-09-25 | 2015-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2018-03-26 | 2018-09-25 | 2019-03-27 | $7700.00 | Window Closed / Lapsed |