US6335049B1
Expired / Lapsed
US
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Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
Assignee: Micron Technology Inc
•
Filing: 2000-01-03
•
Granted: 2002-01-01
•
Expires: 2020-01-03
Abstract
Abstract A chemical vapor deposition method of forming a high k dielectric layer includes positioning a substrate within a chemical vapor deposition reactor. At least one metal comprising precursor and N2O are provided within the reactor under conditions effective to deposit a high k dielectric layer on the substrate comprising oxygen and the metal of the at least one metal precursor. The N2O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% concentration by volume as compared with any O2, O3, NO, and NOX injected to within the reactor. In one implementation, the conditions are void of injection of any of O2, O3, NO, and NOX to within the reactor during the portion of the deposit. In one implementation, a capacitor is formed using the above methods. In preferred implementations, the technique can be used to yield smooth, continuous dielectric layers in the absence of haze or isolated island-like nuclei.
Inventors
- 👤 Cem Basceri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10P14/40; H10P14/42; H10P14/43; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
114 words
A chemical vapor deposition method of forming a high k dielectric layer comprising: positioning a substrate within a chemical vapor deposition reactor; and providing at least one metal comprising precursor and N 2 O within the reactor under conditions effective to deposit a high k dielectric layer on the substrate comprising oxygen and the metal of the at least one metal precursor, the N 2 O being present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 2
Dependent Claim
114 words
A chemical vapor deposition method of forming a high k dielectric layer comprising: positioning a substrate within a chemical vapor deposition reactor; and providing at least one metal comprising precursor and N 2 O within the reactor under conditions effective to deposit a high k dielectric layer on the substrate comprising oxygen and the metal of the at least one metal precursor, the N 2 O being present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 3
Dependent Claim
52 words
The method of claim 1 wherein the N 2 O is present within the reactor during the portion of the deposit at greater than or equal to at least 95% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 4
Dependent Claim
52 words
The method of claim 1 wherein the N 2 O is present within the reactor during the portion of the deposit at greater than or equal to at least 99% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein the portion comprises a majority portion.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein the portion comprises all of the deposit.
Claim 7
Dependent Claim
31 words
The method of claim 1 wherein the substrate is received on a susceptor, and the conditions during the portion comprise a susceptor temperature of less than or equal to 550° C.
Claim 8
Dependent Claim
33 words
The method of claim 1 wherein the substrate is received on a susceptor, and the conditions during all of the deposit comprise a susceptor temperature of less than or equal to 550° C.
Claim 9
Dependent Claim
45 words
The method of claim 1 wherein the conditions are effective to form an outermost surface of the high k dielectric layer at conclusion of the portion to have a roughness of no greater than 20 Angstroms as determinable by average atomic force microscopy RMS roughness.
Claim 10
Dependent Claim
45 words
The method of claim 1 wherein the conditions are effective to form an outermost surface of the high k dielectric layer at conclusion of the portion to have a roughness of no greater than 15 Angstroms as determinable by average atomic force microscopy RMS roughness.
Claim 11
Dependent Claim
15 words
The method of claim 1 wherein the conditions are void of plasma and remote plasma.
Claim 12
Dependent Claim
17 words
The method of claim 1 wherein the conditions comprise at least one of plasma or remote plasma.
Claim 13
Dependent Claim
14 words
The method of claim 1 wherein the high k dielectric layer comprises a titanate.
Claim 14
Dependent Claim
50 words
The method of claim 1 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any O 2 injected to within the reactor.
Claim 15
Dependent Claim
50 words
The method of claim 1 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any O 3 injected to within the reactor.
Claim 16
Dependent Claim
49 words
The method of claim 1 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any NO injected to within the reactor.
Claim 17
Dependent Claim
50 words
The method of claim 1 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any NO X injected to within the reactor.
Claim 18
Independent Claim
173 words
A method of forming a capacitor comprising: forming a first capacitor electrode layer over a substrate; positioning the substrate with the first capacitor electrode layer within a chemical vapor deposition reactor; providing at least one metal comprising precursor and N 2 O within the reactor under conditions effective to deposit a high k capacitor dielectric layer comprising oxygen and the metal of the at least one metal precursor over the first capacitor electrode, the N 2 O being present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor to form an outermost surface of the capacitor dielectric layer at conclusion of the portion to have a roughness of no greater than 20 Angstroms as determinable by average atomic force microscopy RMS roughness; and forming a second capacitor electrode layer over the high k capacitor dielectric layer.
Claim 19
Independent Claim
173 words
A method of forming a capacitor comprising: forming a first capacitor electrode layer over a substrate; positioning the substrate with the first capacitor electrode layer within a chemical vapor deposition reactor; providing at least one metal comprising precursor and N 2 O within the reactor under conditions effective to deposit a high k capacitor dielectric layer comprising oxygen and the metal of the at least one metal precursor over the first capacitor electrode, the N 2 O being present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor to form an outermost surface of the capacitor dielectric layer at conclusion of the portion to have a roughness of no greater than 20 Angstroms as determinable by average atomic force microscopy RMS roughness; and forming a second capacitor electrode layer over the high k capacitor dielectric layer.
Claim 20
Dependent Claim
20 words
The method of claim 17 wherein the second capacitor electrode layer is formed on the high k capacitor dielectric layer.
Claim 21
Dependent Claim
17 words
The method of claim 17 wherein the second capacitor electrode layer is formed on the outermost surface.
Claim 22
Dependent Claim
26 words
The method of claim 17 wherein thickness of total capacitor dielectric material intermediate the first and second capacitor electrode layers is no greater than 500 Angstroms.
Claim 23
Dependent Claim
26 words
The method of claim 17 wherein thickness of total capacitor dielectric material intermediate the first and second capacitor electrode layers is no greater than 300 Angstroms.
Claim 24
Dependent Claim
26 words
The method of claim 17 wherein thickness of total capacitor dielectric material intermediate the first and second capacitor electrode layers is no greater than 200 Angstroms.
Claim 25
Dependent Claim
21 words
The method of claim 17 wherein the conditions are effective to form said roughness to be no greater than 15 Angstroms.
Claim 26
Dependent Claim
52 words
The method of claim 17 wherein the N 2 O is present within the reactor during the portion of the deposit at greater than or equal to at least 95% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 27
Dependent Claim
52 words
The method of claim 17 wherein the N 2 O is present within the reactor during the portion of the deposit at greater than or equal to at least 99% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 28
Dependent Claim
74 words
The method of claim 17 wherein thickness of total capacitor dielectric material intermediate the first and second capacitor electrode layers is no greater than 500 Angstroms, and wherein the N 2 O is present within the reactor during the portion of the deposit at greater than or equal to at least 95% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 29
Dependent Claim
74 words
The method of claim 17 wherein thickness of total capacitor dielectric material intermediate the first and second capacitor electrode layers is no greater than 500 Angstroms, and wherein the N 2 O is present within the reactor during the portion of the deposit at greater than or equal to at least 99% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 30
Dependent Claim
50 words
The method of claim 17 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any O 2 injected to within the reactor.
Claim 31
Dependent Claim
50 words
The method of claim 17 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any O 3 injected to within the reactor.
Claim 32
Dependent Claim
49 words
The method of claim 17 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any NO injected to within the reactor.
Claim 33
Dependent Claim
50 words
The method of claim 17 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% and less than 100% concentration by volume as compared with any NO X injected to within the reactor.
Claim 34
Independent Claim
195 words
A method of forming a capacitor comprising: forming a first capacitor electrode layer over a substrate; positioning the substrate with the first capacitor electrode layer within a chemical vapor deposition reactor; providing at least one metal comprising precursor and N 2 O within the reactor under conditions effective to deposit a high k capacitor dielectric layer comprising oxygen and the metal of the at least one metal precursor over the first capacitor electrode, the N 2 O being present within the reactor during at least a portion of the deposit at greater than or equal to at least 95% and less than 100% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor to form an outermost surface of the capacitor dielectric layer at conclusion of the portion to have a roughness of no greater than 15 Angstroms as determinable by average atomic force microscopy RMS roughness; and forming a second capacitor electrode layer over the high k capacitor dielectric layer, and wherein thickness of total capacitor dielectric material intermediate the first and second capacitor electrode layers is no greater than 300 Angstroms.
Claim 35
Independent Claim
195 words
A method of forming a capacitor comprising: forming a first capacitor electrode layer over a substrate; positioning the substrate with the first capacitor electrode layer within a chemical vapor deposition reactor; providing at least one metal comprising precursor and N 2 O within the reactor under conditions effective to deposit a high k capacitor dielectric layer comprising oxygen and the metal of the at least one metal precursor over the first capacitor electrode, the N 2 O being present within the reactor during at least a portion of the deposit at greater than or equal to at least 95% and less than 100% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor to form an outermost surface of the capacitor dielectric layer at conclusion of the portion to have a roughness of no greater than 15 Angstroms as determinable by average atomic force microscopy RMS roughness; and forming a second capacitor electrode layer over the high k capacitor dielectric layer, and wherein thickness of total capacitor dielectric material intermediate the first and second capacitor electrode layers is no greater than 300 Angstroms.
Claim 36
Dependent Claim
52 words
The method of claim 32 wherein the N 2 O is present within the reactor during the portion of the deposit at greater than or equal to at least 99% concentration by volume as compared with any O 2 , O 3 , NO, and NO X injected to within the reactor.
Claim 37
Dependent Claim
50 words
The method of claim 32 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 95% and less than 100% concentration by volume as compared with any O 2 injected to within the reactor.
Claim 38
Dependent Claim
50 words
The method of claim 32 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 95% and less than 100% concentration by volume as compared with any O 3 injected to within the reactor.
Claim 39
Dependent Claim
49 words
The method of claim 32 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 95% and less than 100% concentration by volume as compared with any NO injected to within the reactor.
Claim 40
Dependent Claim
50 words
The method of claim 32 wherein the N 2 O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 95% and less than 100% concentration by volume as compared with any NO X injected to within the reactor.
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